IRGP6630D Todos los transistores

 

IRGP6630D - IGBT. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: IRGP6630D
   Tipo de transistor: IGBT
   Polaridad de transistor: N

ESPECIFICACIONES TECNICAS


   Pcⓘ - Máxima potencia disipada: 192 W
   |Vce|ⓘ - Tensión máxima colector-emisor: 600 V
   |Vge|ⓘ - Tensión máxima puerta-emisor: 20 V
   |Ic|ⓘ - Colector de Corriente Continua a 25℃: 47 A
   |VCEsat|ⓘ - Voltaje de saturación colector-emisor, typ: 1.65 V @25℃
   Tjⓘ - Temperatura máxima de unión: 175 ℃
   trⓘ - Tiempo de subida, typ: 25 nS
   Coesⓘ - Capacitancia de salida, typ: 70 pF
   Paquete / Cubierta: TO247
     - Selección de transistores por parámetros

 

IRGP6630D Datasheet (PDF)

 ..1. Size:699K  international rectifier
 irgp6630d.pdf pdf_icon

IRGP6630D

IRGP6630DPbF IRGP6630D-EPbF Insulated Gate Bipolar Transistor with Ultrafast Soft Recovery Diode VCES = 600V C C C IC = 30A, TC =100C E tSC 5s, TJ(max) = 175C GE C G C G EVCE(ON) typ. = 1.65V @ IC = 18A IRGP6630DPbFIRGP6630DEPbFn-channelTO247ACTO247ADApplications G C E Welding Gate Collector Emitter H Bridg

 8.1. Size:637K  international rectifier
 irgp6690dpbf irgp6690d-epbf.pdf pdf_icon

IRGP6630D

IRGP6690DPbF IRGP6690D-EPbF Insulated Gate Bipolar Transistor with Ultrafast Soft Recovery Diode VCES = 600V C C C IC = 90A, TC =100C tSC 5s, TJ(max) = 175C GE E C G C G EVCE(ON) typ. = 1.65V @ IC = 75A IRGP6690DPbF IRGP6690D-EPbF n-channelTO-247AC TO-247AD Applications G C E Welding Gate Collector Emitter H Bridge Converters Fea

 8.2. Size:682K  international rectifier
 irgp6660d.pdf pdf_icon

IRGP6630D

IRGP6660DPbF IRGP6660D-EPbF Insulated Gate Bipolar Transistor with Ultrafast Soft Recovery Diode VCES = 600V C C C IC = 60A, TC =100C tSC 5s, TJ(max) = 175C GE E C G C G EVCE(ON) typ. = 1.7V @ IC = 48A IRGP6660DPbF IRGP6660D-EPbF n-channelTO-247AC TO-247AD Applications G C E Welding Gate Collector Emitter H Bridge Converters Feat

 8.3. Size:688K  international rectifier
 irgp6650d.pdf pdf_icon

IRGP6630D

IRGP6650DPbF IRGP6650D-EPbF Insulated Gate Bipolar Transistor with Ultrafast Soft Recovery Diode VCES = 600V C C C IC = 50A, TC =100C E tSC 5s, TJ(max) = 175C GE C G C G EVCE(ON) typ. = 1.65V @ IC = 35A IRGP6650DPbFIRGP6650DEPbFn-channelTO247ACTO247ADApplications G C E Welding Gate Collector Emitter H Bridg

MOSTRAR MÁS

Otros transistores... IGP30N65H5 , IKP30N65F5 , IKP30N65H5 , IKW30N65H5 , NGTB30N60S , NGTB30N60SWG , NGTB20N120IHL , NGTB25N120IHL , IRGP4063 , NGTB20N120L , NGTB20N120LWG , NGTB25N120L , NGTB25N120LWG , NGTB30N120IHS , NGTB30N120IHSWG , 25MT060WFAPBF , MMG40H120XB6TN .

History: IRG4PC30FPBF | DAZF100G120XCA | SGT75T65SDM1P7 | IRG7RC10FD | FF200R12KT3 | SKM150GB12T4 | GT50N322A

 

 
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