All IGBT. IRGP6630D Datasheet

 

IRGP6630D IGBT. Datasheet pdf. Equivalent

Type Designator: IRGP6630D

Type of IGBT Channel: N-Channel

Maximum Power Dissipation (Pc), W: 192

Maximum Collector-Emitter Voltage |Vce|, V: 600

Collector-Emitter saturation Voltage |Vcesat|, V: 1.65

Maximum Gate-Emitter Voltage |Veg|, V: 20

Maximum Collector Current |Ic|, A: 47

Maximum Junction Temperature (Tj), °C: 175

Rise Time, nS: 25

Maximum Collector Capacity (Cc), pF: 70

Package: TO247

IRGP6630D Transistor Equivalent Substitute - IGBT Cross-Reference Search

 

IRGP6630D Datasheet (PDF)

0.1. irgp6630d.pdf Size:699K _international_rectifier

IRGP6630D
IRGP6630D

IRGP6630DPbF IRGP6630D-EPbF Insulated Gate Bipolar Transistor with Ultrafast Soft Recovery Diode VCES = 600V C C C IC = 30A, TC =100C E tSC 5s, TJ(max) = 175C GE C G C G EVCE(ON) typ. = 1.65V @ IC = 18A IRGP6630DPbFIRGP6630DEPbFn-channelTO247ACTO247ADApplications G C E Welding Gate Collector Emitter H Bridg

8.1. irgp6650d.pdf Size:688K _international_rectifier

IRGP6630D
IRGP6630D

IRGP6650DPbF IRGP6650D-EPbF Insulated Gate Bipolar Transistor with Ultrafast Soft Recovery Diode VCES = 600V C C C IC = 50A, TC =100C E tSC 5s, TJ(max) = 175C GE C G C G EVCE(ON) typ. = 1.65V @ IC = 35A IRGP6650DPbFIRGP6650DEPbFn-channelTO247ACTO247ADApplications G C E Welding Gate Collector Emitter H Bridg

8.2. auirgp66524d0.pdf Size:976K _international_rectifier

IRGP6630D
IRGP6630D

AUIRGP66524D0 AUIRGF66524D0 AUTOMOTIVE GRADE INSULATED GATE BIPOLAR TRANSISTOR WITH COOLiRIGBT ULTRAFAST SOFT RECOVERY DIODE CVCES = 600V INOMINAL = 24A E Tsc 6s, TJ(MAX) = 175C GC E G C G EVCE(ON) typ. = 1.60V TO-247AC TO-247AD n-channelAUIRGP66524D0 AUIRGF66524D0 Applications G C E Air Conditioning Compressor Gate Collector E

 8.3. irgp6660d.pdf Size:682K _international_rectifier

IRGP6630D
IRGP6630D

IRGP6660DPbF IRGP6660D-EPbF Insulated Gate Bipolar Transistor with Ultrafast Soft Recovery Diode VCES = 600V C C C IC = 60A, TC =100C tSC 5s, TJ(max) = 175C GE E C G C G EVCE(ON) typ. = 1.7V @ IC = 48A IRGP6660DPbF IRGP6660D-EPbF n-channelTO-247AC TO-247AD Applications G C E Welding Gate Collector Emitter H Bridge Converters Feat

8.4. irgp6690d.pdf Size:649K _international_rectifier

IRGP6630D
IRGP6630D

IRGP6690DPbF IRGP6690D-EPbF Insulated Gate Bipolar Transistor with Ultrafast Soft Recovery Diode VCES = 600V C C C IC = 90A, TC =100C tSC 5s, TJ(max) = 175C GE E C G C G EVCE(ON) typ. = 1.65V @ IC = 75A IRGP6690DPbF IRGP6690D-EPbF n-channelTO-247AC TO-247AD Applications G C E Welding Gate Collector Emitter H Bridge Converters Fea

Datasheet: IGP30N65H5 , IKP30N65F5 , IKP30N65H5 , IKW30N65H5 , NGTB30N60S , NGTB30N60SWG , NGTB20N120IHL , NGTB25N120IHL , GT30J301 , NGTB20N120L , NGTB20N120LWG , NGTB25N120L , NGTB25N120LWG , NGTB30N120IHS , NGTB30N120IHSWG , 25MT060WFAPBF , MMG40H120XB6TN .

 

 
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