All IGBT. IRGP6630D Datasheet

 

IRGP6630D IGBT. Datasheet pdf. Equivalent


   Type Designator: IRGP6630D
   Type: IGBT + Anti-Parallel Diode
   Type of IGBT Channel: N
   Pcⓘ - Maximum Power Dissipation: 192 W
   |Vce|ⓘ - Maximum Collector-Emitter Voltage: 600 V
   |Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
   |Ic|ⓘ - Maximum Collector Current: 47 A @25℃
   |VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.65 V @25℃
   |VGEth|ⓘ - Maximum G-E Threshold Voltag: 6.5 V
   Tjⓘ - Maximum Junction Temperature: 175 ℃
   trⓘ - Rise Time, typ: 25 nS
   Coesⓘ - Output Capacitance, typ: 70 pF
   Qgⓘ - Total Gate Charge, typ: 30 nC
   Package: TO247

 IRGP6630D Transistor Equivalent Substitute - IGBT Cross-Reference Search

 

IRGP6630D Datasheet (PDF)

 ..1. Size:699K  international rectifier
 irgp6630d.pdf

IRGP6630D IRGP6630D

IRGP6630DPbF IRGP6630D-EPbF Insulated Gate Bipolar Transistor with Ultrafast Soft Recovery Diode VCES = 600V C C C IC = 30A, TC =100C E tSC 5s, TJ(max) = 175C GE C G C G EVCE(ON) typ. = 1.65V @ IC = 18A IRGP6630DPbFIRGP6630DEPbFn-channelTO247ACTO247ADApplications G C E Welding Gate Collector Emitter H Bridg

 8.1. Size:682K  international rectifier
 irgp6660d.pdf

IRGP6630D IRGP6630D

IRGP6660DPbF IRGP6660D-EPbF Insulated Gate Bipolar Transistor with Ultrafast Soft Recovery Diode VCES = 600V C C C IC = 60A, TC =100C tSC 5s, TJ(max) = 175C GE E C G C G EVCE(ON) typ. = 1.7V @ IC = 48A IRGP6660DPbF IRGP6660D-EPbF n-channelTO-247AC TO-247AD Applications G C E Welding Gate Collector Emitter H Bridge Converters Feat

 8.2. Size:688K  international rectifier
 irgp6650d.pdf

IRGP6630D IRGP6630D

IRGP6650DPbF IRGP6650D-EPbF Insulated Gate Bipolar Transistor with Ultrafast Soft Recovery Diode VCES = 600V C C C IC = 50A, TC =100C E tSC 5s, TJ(max) = 175C GE C G C G EVCE(ON) typ. = 1.65V @ IC = 35A IRGP6650DPbFIRGP6650DEPbFn-channelTO247ACTO247ADApplications G C E Welding Gate Collector Emitter H Bridg

 8.3. Size:649K  international rectifier
 irgp6690d.pdf

IRGP6630D IRGP6630D

IRGP6690DPbF IRGP6690D-EPbF Insulated Gate Bipolar Transistor with Ultrafast Soft Recovery Diode VCES = 600V C C C IC = 90A, TC =100C tSC 5s, TJ(max) = 175C GE E C G C G EVCE(ON) typ. = 1.65V @ IC = 75A IRGP6690DPbF IRGP6690D-EPbF n-channelTO-247AC TO-247AD Applications G C E Welding Gate Collector Emitter H Bridge Converters Fea

 8.4. Size:976K  international rectifier
 auirgp66524d0.pdf

IRGP6630D IRGP6630D

AUIRGP66524D0 AUIRGF66524D0 AUTOMOTIVE GRADE INSULATED GATE BIPOLAR TRANSISTOR WITH COOLiRIGBT ULTRAFAST SOFT RECOVERY DIODE CVCES = 600V INOMINAL = 24A E Tsc 6s, TJ(MAX) = 175C GC E G C G EVCE(ON) typ. = 1.60V TO-247AC TO-247AD n-channelAUIRGP66524D0 AUIRGF66524D0 Applications G C E Air Conditioning Compressor Gate Collector E

 8.5. Size:637K  infineon
 irgp6690dpbf irgp6690d-epbf.pdf

IRGP6630D IRGP6630D

IRGP6690DPbF IRGP6690D-EPbF Insulated Gate Bipolar Transistor with Ultrafast Soft Recovery Diode VCES = 600V C C C IC = 90A, TC =100C tSC 5s, TJ(max) = 175C GE E C G C G EVCE(ON) typ. = 1.65V @ IC = 75A IRGP6690DPbF IRGP6690D-EPbF n-channelTO-247AC TO-247AD Applications G C E Welding Gate Collector Emitter H Bridge Converters Fea

Datasheet: APT20GN60BG , APT20GN60KG , APT20GN60SG , AOK20B60D1 , F3L30R06W1E3_B11 , WGW15G120N , WGW15G120W , IRG4MC50U , CRG60T60AK3HD , AOB10B60D , AOK10B60D , AOT10B60D , NGB8207AB , NGB8207B , AOB15B60D , IRGSL8B60K , AOK15B60D .

 

 
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