IKW30N65NL5 - IGBT. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: IKW30N65NL5
Tipo de transistor: IGBT + Diode
Código de marcado: K30ENL5
Polaridad de transistor: N
ESPECIFICACIONES TECNICAS
Máxima potencia disipada (Pc), W: 227
Tensión máxima colector-emisor |Vce|, V: 650
Tensión máxima puerta-emisor |Vge|, V: 20
Colector de Corriente Continua a 25℃ |Ic|, A: 85
Voltaje de saturación colector-emisor |VCE(sat)|, typ, V: 1.05
Temperatura máxima de unión (Tj), ℃: 175
Tiempo de subida (tr), typ, nS: 20
Capacitancia de salida (Cc), typ, pF: 64
Paquete / Cubierta: TO247
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IKW30N65NL5 Datasheet (PDF)
ikw30n65nl5.pdf
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ikw30n65el5.pdf
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