IKW30N65NL5 Todos los transistores

 

IKW30N65NL5 - IGBT. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: IKW30N65NL5
   Tipo de transistor: IGBT
   Polaridad de transistor: N

ESPECIFICACIONES TECNICAS


   Pcⓘ - Máxima potencia disipada: 227 W
   |Vce|ⓘ - Tensión máxima colector-emisor: 650 V
   |Vge|ⓘ - Tensión máxima puerta-emisor: 20 V
   |Ic|ⓘ - Colector de Corriente Continua a 25℃: 85 A
   |VCEsat|ⓘ - Voltaje de saturación colector-emisor, typ: 1.05 V @25℃
   Tjⓘ - Temperatura máxima de unión: 175 ℃
   trⓘ - Tiempo de subida, typ: 20 nS
   Coesⓘ - Capacitancia de salida, typ: 64 pF
   Paquete / Cubierta: TO247
     - Selección de transistores por parámetros

 

IKW30N65NL5 Datasheet (PDF)

 ..1. Size:2093K  infineon
ikw30n65nl5.pdf pdf_icon

IKW30N65NL5

IGBTLow V IGBT in TRENCHSTOPTM 5 technology copacked with RAPID 2CE(sat)fast and soft antiparallel diodeIKW30N65NL5650V DuoPack IGBT and diodeLow V series fifth generationCE(sat)Data sheetIndustrial Power ControlIKW30N65NL5Low V series fifth generationCE(sat)Low V IGBT in TRENCHSTOPTM 5 technology copacked with RAPID 2CE(sat)fast and soft antiparallel diodeCFe

 6.1. Size:2196K  infineon
ikw30n65h5.pdf pdf_icon

IKW30N65NL5

IGBTHigh speed 5 IGBT in TRENCHSTOPTM 5 technology copacked with RAPID 1fast and soft antiparallel diodeIKW30N65H5650V DuoPack IGBT and DiodeHigh speed switching series fifth generationData sheetIndustrial Power ControlIKW30N65H5High speed switching series fifth generationHigh speed 5 IGBT in TRENCHSTOPTM 5 technology copacked with RAPID 1fast and soft antiparallel diode

 6.2. Size:1908K  infineon
ikw30n65wr5 k30ewr5.pdf pdf_icon

IKW30N65NL5

Reverse Conducting SeriesReverse conducting IGBT with monolithic body diodeIKW30N65WR5Data sheetInductrial Power ControlIKW30N65WR5Reverse Conducting SeriesReverse conducting IGBT with monolithic body diodeCFeatures: Powerful monolithic diode optimized for ZCS applications TRENCHSTOPTM 5 technology applications offers:- high ruggedness, temperature stable behavior

 6.3. Size:1908K  infineon
ikw30n65wr5.pdf pdf_icon

IKW30N65NL5

Reverse Conducting SeriesReverse conducting IGBT with monolithic body diodeIKW30N65WR5Data sheetInductrial Power ControlIKW30N65WR5Reverse Conducting SeriesReverse conducting IGBT with monolithic body diodeCFeatures: Powerful monolithic diode optimized for ZCS applications TRENCHSTOPTM 5 technology applications offers:- high ruggedness, temperature stable behavior

Otros transistores... AP05G120SW-HF , TSG10N120CN , AP05G120NSW-HF , AP20GT60SW , AP20GT60W , CI15T60 , MMIX4B12N300 , NGD8205A , IHW20N135R5 , IXYP8N90C3D1 , APT20GN60BG , APT20GN60KG , APT20GN60SG , AOK20B60D1 , F3L30R06W1E3_B11 , WGW15G120N , WGW15G120W .

History: AUIRGS4062D1 | SGM50PA12A6BTFD | IXGP12N100

 

 
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