NGTB25N120FLWG Todos los transistores

 

NGTB25N120FLWG IGBT Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: NGTB25N120FLWG
   Tipo de transistor: IGBT
   Polaridad de transistor: N

ESPECIFICACIONES TECNICAS


   Pcⓘ - Máxima potencia disipada: 192 W
   |Vce|ⓘ - Tensión máxima colector-emisor: 1200 V
   |Vge|ⓘ - Tensión máxima puerta-emisor: 20 V
   |Ic|ⓘ - Colector de Corriente Continua a 25℃: 25 A
   |VCEsat|ⓘ - Voltaje de saturación colector-emisor, typ: 2 V @25℃
   Tjⓘ - Temperatura máxima de unión: 150 ℃
   trⓘ - Tiempo de subida, typ: 26 nS
   Coesⓘ - Capacitancia de salida, typ: 144 pF
   Paquete / Cubierta: TO247
 

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NGTB25N120FLWG PDF specs

 ..1. Size:186K  onsemi
 ngtb25n120flwg.pdf pdf_icon

NGTB25N120FLWG

NGTB25N120FLWG IGBT This Insulated Gate Bipolar Transistor (IGBT) features a robust and cost effective Trench construction, and provides superior performance in demanding switching applications, offering both low on state voltage and minimal switching loss. The IGBT is well suited for UPS and solar applications. Incorporated into the device is a soft and fast co-packaged free wheeling di... See More ⇒

 2.1. Size:186K  onsemi
 ngtb25n120fl.pdf pdf_icon

NGTB25N120FLWG

NGTB25N120FLWG IGBT This Insulated Gate Bipolar Transistor (IGBT) features a robust and cost effective Trench construction, and provides superior performance in demanding switching applications, offering both low on state voltage and minimal switching loss. The IGBT is well suited for UPS and solar applications. Incorporated into the device is a soft and fast co-packaged free wheeling di... See More ⇒

 2.2. Size:148K  onsemi
 ngtb25n120fl2.pdf pdf_icon

NGTB25N120FLWG

NGTB25N120FL2WG IGBT - Field Stop II This Insulated Gate Bipolar Transistor (IGBT) features a robust and cost effective Field Stop II Trench construction, and provides superior performance in demanding switching applications, offering both low on state voltage and minimal switching loss. The IGBT is well suited for UPS and solar applications. Incorporated into the device is a soft and fa... See More ⇒

 2.3. Size:144K  onsemi
 ngtb25n120fl2wg.pdf pdf_icon

NGTB25N120FLWG

NGTB25N120FL2WG IGBT - Field Stop II This Insulated Gate Bipolar Transistor (IGBT) features a robust and cost effective Field Stop II Trench construction, and provides superior performance in demanding switching applications, offering both low on state voltage and minimal switching loss. The IGBT is well suited for UPS and solar applications. Incorporated into the device is a soft and fa... See More ⇒

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Otros transistores... NGTG50N60FLWG , NGTG50N60FWG , KGF50N60KDA , IKW30N65EL5 , IKW30N65NL5 , IHW40N65R5 , IKW40N65WR5 , NGTB25N120FL , RJH30E2DPP , 20MT120UFAPBF , 20MT120UFP , MMG40HB120H6HN , STGWA40N120KD , RJH1CV5DPK , AUIRGB4062D1 , AUIRGS4062D1 , AUIRGSL4062D1 .

History: AOTF20B65M1

 

 
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