NGTB25N120FLWG
- IGBT. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: NGTB25N120FLWG
Tipo de transistor: IGBT + Diode
Código de marcado: 25N120FL
Polaridad de transistor: N
ESPECIFICACIONES TECNICAS
Pcⓘ - Máxima potencia disipada: 192
W
|Vce|ⓘ - Tensión máxima colector-emisor: 1200
V
|Vge|ⓘ - Tensión máxima puerta-emisor: 20
V
|Ic|ⓘ - Colector de Corriente Continua a 25℃: 25
A
|VCEsat|ⓘ -
Voltaje de saturación colector-emisor, typ: 2
V @25℃
|VGEth|ⓘ -
Tensión máxima de puerta-umbral: 6.5
V
Tjⓘ -
Temperatura máxima de unión: 150
℃
trⓘ - Tiempo de subida, typ: 26
nS
Coesⓘ - Capacitancia de salida, typ: 144
pF
Qgⓘ - Carga total de la puerta, typ: 220
nC
Paquete / Cubierta:
TO247
Búsqueda de reemplazo de NGTB25N120FLWG
- IGBT
NGTB25N120FLWG
Datasheet (PDF)
..1. Size:186K onsemi
ngtb25n120flwg.pdf 
NGTB25N120FLWGIGBTThis Insulated Gate Bipolar Transistor (IGBT) features a robust andcost effective Trench construction, and provides superior performancein demanding switching applications, offering both low on statevoltage and minimal switching loss. The IGBT is well suited for UPSand solar applications. Incorporated into the device is a soft and fastco-packaged free wheeling di
2.1. Size:186K onsemi
ngtb25n120fl.pdf
NGTB25N120FLWGIGBTThis Insulated Gate Bipolar Transistor (IGBT) features a robust andcost effective Trench construction, and provides superior performancein demanding switching applications, offering both low on statevoltage and minimal switching loss. The IGBT is well suited for UPSand solar applications. Incorporated into the device is a soft and fastco-packaged free wheeling di
2.2. Size:148K onsemi
ngtb25n120fl2.pdf
NGTB25N120FL2WGIGBT - Field Stop IIThis Insulated Gate Bipolar Transistor (IGBT) features a robust andcost effective Field Stop II Trench construction, and provides superiorperformance in demanding switching applications, offering both lowon state voltage and minimal switching loss. The IGBT is well suitedfor UPS and solar applications. Incorporated into the device is a softand fa
2.3. Size:144K onsemi
ngtb25n120fl2wg.pdf
NGTB25N120FL2WGIGBT - Field Stop IIThis Insulated Gate Bipolar Transistor (IGBT) features a robust andcost effective Field Stop II Trench construction, and provides superiorperformance in demanding switching applications, offering both lowon state voltage and minimal switching loss. The IGBT is well suitedfor UPS and solar applications. Incorporated into the device is a softand fa
2.4. Size:154K onsemi
ngtb25n120fl3wg.pdf
NGTB25N120FL3WGIGBT - Ultra Field StopThis Insulated Gate Bipolar Transistor (IGBT) features a robust andcost effective Ultra Field Stop Trench construction, and providessuperior performance in demanding switching applications, offeringboth low on-state voltage and minimal switching loss. The IGBT iswell suited for UPS and solar applications. Incorporated into the deviceis a soft
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