All IGBT. NGTB25N120FLWG Datasheet

 

NGTB25N120FLWG Datasheet and Replacement


   Type Designator: NGTB25N120FLWG
   Type: IGBT
   Type of IGBT Channel: N
   Pcⓘ - Maximum Power Dissipation: 192 W
   |Vce|ⓘ - Maximum Collector-Emitter Voltage: 1200 V
   |Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
   |Ic|ⓘ - Maximum Collector Current: 25 A @25℃
   |VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 2 V @25℃
   Tjⓘ - Maximum Junction Temperature: 150 ℃
   trⓘ - Rise Time, typ: 26 nS
   Coesⓘ - Output Capacitance, typ: 144 pF
   Package: TO247
      - IGBT Cross-Reference

 

NGTB25N120FLWG Datasheet (PDF)

 ..1. Size:186K  onsemi
ngtb25n120flwg.pdf pdf_icon

NGTB25N120FLWG

NGTB25N120FLWGIGBTThis Insulated Gate Bipolar Transistor (IGBT) features a robust andcost effective Trench construction, and provides superior performancein demanding switching applications, offering both low on statevoltage and minimal switching loss. The IGBT is well suited for UPSand solar applications. Incorporated into the device is a soft and fastco-packaged free wheeling di

 2.1. Size:186K  onsemi
ngtb25n120fl.pdf pdf_icon

NGTB25N120FLWG

NGTB25N120FLWGIGBTThis Insulated Gate Bipolar Transistor (IGBT) features a robust andcost effective Trench construction, and provides superior performancein demanding switching applications, offering both low on statevoltage and minimal switching loss. The IGBT is well suited for UPSand solar applications. Incorporated into the device is a soft and fastco-packaged free wheeling di

 2.2. Size:148K  onsemi
ngtb25n120fl2.pdf pdf_icon

NGTB25N120FLWG

NGTB25N120FL2WGIGBT - Field Stop IIThis Insulated Gate Bipolar Transistor (IGBT) features a robust andcost effective Field Stop II Trench construction, and provides superiorperformance in demanding switching applications, offering both lowon state voltage and minimal switching loss. The IGBT is well suitedfor UPS and solar applications. Incorporated into the device is a softand fa

 2.3. Size:144K  onsemi
ngtb25n120fl2wg.pdf pdf_icon

NGTB25N120FLWG

NGTB25N120FL2WGIGBT - Field Stop IIThis Insulated Gate Bipolar Transistor (IGBT) features a robust andcost effective Field Stop II Trench construction, and provides superiorperformance in demanding switching applications, offering both lowon state voltage and minimal switching loss. The IGBT is well suitedfor UPS and solar applications. Incorporated into the device is a softand fa

Datasheet: APT20GN60BG , APT20GN60KG , APT20GN60SG , AOK20B60D1 , F3L30R06W1E3_B11 , WGW15G120N , WGW15G120W , IRG4MC50U , GT30F131 , AOB10B60D , AOK10B60D , AOT10B60D , NGB8207AB , NGB8207B , AOB15B60D , IRGSL8B60K , AOK15B60D .

History: MMG75S120B6C | DAHF225G120SB | FGY120T65SPD-F085 | IQGB300N120I4 | 2MBI900VXA-120P-50 | NGTB25N120IHL | BT15T60A8F

Keywords - NGTB25N120FLWG transistor datasheet

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