NGTB45N60S - IGBT. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: NGTB45N60S
Tipo de transistor: IGBT + Diode
Código de marcado: 45N60S
Polaridad de transistor: N
ESPECIFICACIONES TECNICAS
Pcⓘ - Máxima potencia disipada: 250 W
|Vce|ⓘ - Tensión máxima colector-emisor: 600 V
|Vge|ⓘ - Tensión máxima puerta-emisor: 20 V
|Ic|ⓘ - Colector de Corriente Continua a 25℃: 45 A
|VCEsat|ⓘ - Voltaje de saturación colector-emisor, typ: 2.2 V @25℃
|VGEth|ⓘ - Tensión máxima de puerta-umbral: 6.5 V
Tjⓘ - Temperatura máxima de unión: 150 ℃
trⓘ - Tiempo de subida, typ: 34 nS
Coesⓘ - Capacitancia de salida, typ: 120 pF
Qgⓘ - Carga total de la puerta, typ: 134 nC
Paquete / Cubierta: TO247
NGTB45N60S Datasheet (PDF)
ngtb45n60s.pdf
NGTB45N60SWGIGBTThis Insulated Gate Bipolar Transistor (IGBT) features a robust andcost effective Field Stop (FS) Trench construction, and providessuperior performance in demanding switching applications, offeringboth low on state voltage and minimal switching loss. The IGBT iswell suited for half bridge resonant applications. Incorporated into thedevice is a soft and fast co-pack
ngtb45n60s1wg.pdf
NGTB45N60S1WGIGBT - Inverter WeldingThis Insulated Gate Bipolar Transistor (IGBT) features a robust andcost effective Trench construction, and provides superior performancein demanding switching applications, offering both low on statevoltage and minimal switching loss. The IGBT is well suited forwelding applications. Incorporated into the device is a soft and fastwww.onsemi.com
ngtb45n60s2wg.pdf
NGTB45N60S2WGIGBT - Inverter WeldingThis Insulated Gate Bipolar Transistor (IGBT) features a robust andcost effective Trench construction, and provides superior performancein demanding switching applications, offering both low on statevoltage and minimal switching loss. The IGBT is well suited forwelding applications. Incorporated into the device is a soft and fastwww.onsemi.com
ngtb45n60s1.pdf
NGTB45N60S1WGIGBT - Inverter WeldingThis Insulated Gate Bipolar Transistor (IGBT) features a robust andcost effective Trench construction, and provides superior performancein demanding switching applications, offering both low on statevoltage and minimal switching loss. The IGBT is well suited forwelding applications. Incorporated into the device is a soft and fastwww.onsemi.com
Otros transistores... IRGP4740D , IRGS4640D , IRGSL4640D , MM25G120B , MMG40A120B7HN , MMG75HB060H6EN , NGTB30N60IHLWG , NGTB40N60IHLWG , IRG4PC50UD , NGTB45N60SWG , NGTB50N60S , NGTB50N60SWG , IGW40N65H5 , IGP40N65F5 , IGP40N65H5 , IGW40N65F5 , IKP40N65F5 .
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