NGTB45N60S - аналоги, основные параметры, даташиты
Наименование: NGTB45N60S
Тип транзистора: IGBT
Тип управляющего канала: N
Предельные значения
Pc ⓘ - Максимальная рассеиваемая мощность: 250 W
|Vce|ⓘ - Предельно-допустимое напряжение коллектор-эмиттер: 600 V
|Vge|ⓘ - Максимально допустимое напряжение эмиттер-затвор: 20 V
|Ic| ⓘ - Максимальный постоянный ток коллектора: 45 A @25℃
Tj ⓘ - Максимальная температура перехода: 150 ℃
Электрические характеристики
|VCEsat|ⓘ - Напряжение насыщения коллектор-эмиттер типовое: 2.2 V @25℃
tr ⓘ - Время нарастания типовое: 34 nS
Coesⓘ - Выходная емкость, типовая: 120 pF
Тип корпуса: TO247
Аналог (замена) для NGTB45N60S
- подбор ⓘ IGBT транзистора по параметрам
NGTB45N60S даташит
ngtb45n60s.pdf
NGTB45N60SWG IGBT This Insulated Gate Bipolar Transistor (IGBT) features a robust and cost effective Field Stop (FS) Trench construction, and provides superior performance in demanding switching applications, offering both low on state voltage and minimal switching loss. The IGBT is well suited for half bridge resonant applications. Incorporated into the device is a soft and fast co-pack
ngtb45n60s1wg.pdf
NGTB45N60S1WG IGBT - Inverter Welding This Insulated Gate Bipolar Transistor (IGBT) features a robust and cost effective Trench construction, and provides superior performance in demanding switching applications, offering both low on state voltage and minimal switching loss. The IGBT is well suited for welding applications. Incorporated into the device is a soft and fast www.onsemi.com
ngtb45n60s2wg.pdf
NGTB45N60S2WG IGBT - Inverter Welding This Insulated Gate Bipolar Transistor (IGBT) features a robust and cost effective Trench construction, and provides superior performance in demanding switching applications, offering both low on state voltage and minimal switching loss. The IGBT is well suited for welding applications. Incorporated into the device is a soft and fast www.onsemi.com
ngtb45n60s1.pdf
NGTB45N60S1WG IGBT - Inverter Welding This Insulated Gate Bipolar Transistor (IGBT) features a robust and cost effective Trench construction, and provides superior performance in demanding switching applications, offering both low on state voltage and minimal switching loss. The IGBT is well suited for welding applications. Incorporated into the device is a soft and fast www.onsemi.com
Другие IGBT... IRGP4740D , IRGS4640D , IRGSL4640D , MM25G120B , MMG40A120B7HN , MMG75HB060H6EN , NGTB30N60IHLWG , NGTB40N60IHLWG , IRG4PC50UD , NGTB45N60SWG , NGTB50N60S , NGTB50N60SWG , IGW40N65H5 , IGP40N65F5 , IGP40N65H5 , IGW40N65F5 , IKP40N65F5 .
History: STGW75H65DFB2-4 | SHD724602
History: STGW75H65DFB2-4 | SHD724602
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Список транзисторов
Обновления
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