IGW40N65H5 Todos los transistores

 

IGW40N65H5 IGBT Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: IGW40N65H5

Tipo de transistor: IGBT

Polaridad de transistor: N

ESPECIFICACIONES TECNICAS

Pcⓘ - Máxima potencia disipada: 255 W

|Vce|ⓘ - Tensión máxima colector-emisor: 650 V

|Vge|ⓘ - Tensión máxima puerta-emisor: 20 V

|Ic|ⓘ - Colector de Corriente Continua a 25℃: 74 A

Tjⓘ - Temperatura máxima de unión: 175 ℃

CARACTERÍSTICAS ELÉCTRICAS

|VCEsat|ⓘ - Voltaje de saturación colector-emisor, typ: 1.65 V @25℃

trⓘ - Tiempo de subida, typ: 12 nS

Coesⓘ - Capacitancia de salida, typ: 40 pF

Encapsulados: TO247

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IGW40N65H5 datasheet

 ..1. Size:2247K  infineon
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IGW40N65H5

IGBT High speed 5 IGBT in TRENCHSTOPTM 5 technology IGP40N65H5, IGW40N65H5 650V IGBT high speed switching series fifth generation Data sheet Industrial Power Control IGP40N65H5, IGW40N65H5 High speed switching series fifth generation High speed 5 IGBT in TRENCHSTOPTM 5 technology Features and Benefits C High speed H5 technology offering Best-in-Class efficiency in hard switchin

 ..2. Size:3337K  infineon
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IGW40N65H5

 0.1. Size:1787K  infineon
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IGW40N65H5

AIGW40N65H5 High speed switching series fifth generation High speed fast IGBT in TRENCHSTOPTM 5 technology Features and Benefits C High speed H5 technology offering Best-in-Class efficiency in hard switching and resonant topologies Plug and play replacement of previous generation IGBTs 650V breakdown voltage G Low gate charge Q E G Maximum junction temperature

 0.2. Size:1938K  infineon
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IGW40N65H5

IGBT High speed 5 FAST IGBT in TRENCHSTOPTM 5 technology IGW40N65H5A 650V IGBT High speed switching series fifth generation Data sheet Industrial Power Control IGW40N65H5A High speed switching series fifth generation High speed 5 FAST IGBT in TRENCHSTOPTM 5 technology Features and Benefits C High speed H5 technology offering Best-in-Class efficiency in hard switching and reson

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History: SGTQ200V75SDB1PWA

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