IGW40N65H5 Datasheet and Replacement
Type Designator: IGW40N65H5
Type: IGBT
Marking Code: G40EH5
Type of IGBT Channel: N
Pcⓘ - Maximum Power Dissipation: 255 W
|Vce|ⓘ - Maximum Collector-Emitter Voltage: 650 V
|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
|Ic|ⓘ - Maximum Collector Current: 74 A @25℃
|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.65 V @25℃
|VGEth|ⓘ - Maximum G-E Threshold Voltag: 4.8 V
Tjⓘ - Maximum Junction Temperature: 175 ℃
trⓘ - Rise Time, typ: 12 nS
Coesⓘ - Output Capacitance, typ: 40 pF
Qgⓘ - Total Gate Charge, typ: 95 nC
Package: TO247
- IGBT Cross-Reference
IGW40N65H5 Datasheet (PDF)
igw40n65h5.pdf

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aigw40n65h5.pdf

AIGW40N65H5High speed switching series fifth generationHigh speed fast IGBT in TRENCHSTOPTM 5 technologyFeatures and Benefits: C High speed H5 technology offering: Best-in-Class efficiency in hard switching and resonant topologies Plug and play replacement of previous generation IGBTs 650V breakdown voltage G Low gate charge Q EG Maximum junction temperature
igw40n65h5a.pdf

IGBTHigh speed 5 FAST IGBT in TRENCHSTOPTM 5 technologyIGW40N65H5A650V IGBTHigh speed switching series fifth generationData sheetIndustrial Power ControlIGW40N65H5AHigh speed switching series fifth generationHigh speed 5 FAST IGBT in TRENCHSTOPTM 5 technologyFeatures and Benefits: CHigh speed H5 technology offering Best-in-Class efficiency in hard switching and reson
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