STGWT20IH125DF Todos los transistores

 

STGWT20IH125DF IGBT Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: STGWT20IH125DF

Tipo de transistor: IGBT

Polaridad de transistor: N

ESPECIFICACIONES TECNICAS

Pcⓘ - Máxima potencia disipada: 259 W

|Vce|ⓘ - Tensión máxima colector-emisor: 1250 V

|Vge|ⓘ - Tensión máxima puerta-emisor: 20 V

|Ic|ⓘ - Colector de Corriente Continua a 25℃: 20 A

Tjⓘ - Temperatura máxima de unión: 175 ℃

CARACTERÍSTICAS ELÉCTRICAS

|VCEsat|ⓘ - Voltaje de saturación colector-emisor, typ: 2.25 V @25℃

Coesⓘ - Capacitancia de salida, typ: 96 pF

Encapsulados: TO3P

 Búsqueda de reemplazo de STGWT20IH125DF IGBT

- Selección ⓘ de transistores por parámetros

 

STGWT20IH125DF datasheet

 ..1. Size:1352K  st
stgwt20ih125df.pdf pdf_icon

STGWT20IH125DF

STGW20IH125DF STGWT20IH125DF 1250 V, 20 A IH series trench gate field-stop IGBT Datasheet - production data Features TAB Designed for soft commutation only Maximum junction temperature TJ = 175 C Minimized tail current VCE(sat) = 2.0 V (typ.) @ IC = 15 A 3 2 Tight parameters distribution 3 1 2 Safe paralleling 1 Very low VF soft recovery co-pa

 ..2. Size:1351K  st
stgw20ih125df stgwt20ih125df.pdf pdf_icon

STGWT20IH125DF

STGW20IH125DF STGWT20IH125DF 1250 V, 20 A IH series trench gate field-stop IGBT Datasheet - production data Features TAB Designed for soft commutation only Maximum junction temperature TJ = 175 C Minimized tail current VCE(sat) = 2.0 V (typ.) @ IC = 15 A 3 2 Tight parameters distribution 3 1 2 Safe paralleling 1 Very low VF soft recovery co-pa

 7.1. Size:1293K  st
stgwt20h60df.pdf pdf_icon

STGWT20IH125DF

STGW20H60DF, STGWT20H60DF 600 V, 20 A high speed trench gate field-stop IGBT Datasheet - production data Features High speed switching TAB Tight parameters distribution Safe paralleling Low thermal resistance Short-circuit rated 3 3 2 2 Ultrafast soft recovery antiparallel diode 1 1 TO-247 TO-3P Applications Motor control UPS, PFC Figure

 7.2. Size:2085K  st
stgwt20v60df.pdf pdf_icon

STGWT20IH125DF

STGB20V60DF, STGP20V60DF, STGW20V60DF, STGWT20V60DF 600 V, 20 A very high speed trench gate field-stop IGBT Datasheet - production data Features TAB TAB Maximum junction temperature TJ = 175 C Very high speed switching series 3 3 2 Tail-less switching off 1 1 Low saturation voltage VCE(sat) = 1.8 V (typ.) TO-220 D PAK @ IC = 20 A TAB Tight paramete

Otros transistores... IGP40N65H5 , IGW40N65F5 , IKP40N65F5 , IKW40N65F5 , NGTB40N60FLWG , STGW15S120DF3 , STGW20IH125DF , STGWA15S120DF3 , IKW40N65WR5 , SML75HB06 , MMG50H120X6TN , MMG50S120B6TN , MMG50W120XB6TN , NGTB30N120L , NGTB30N120LWG , NGTB40N120L , NGTB40N120LWG .

 

 

 


🌐 : EN  ES  РУ

social

Liste

Recientemente añadidas las descripciónes de los transistores

IGBT: JJT40N120SE | JJT40N120HE | JJT30N65UE | JJT30N65SY | JJT30N65SS | JJT30N65SE | JJT40N65UH | JJT40N65UE | JJT40N65LE | JJT40N65HE | JJT40N135UE

 

 

 

Popular searches

2sd1047 transistor | mj802 | bu508a | bc560c | ksa1220ay | irf 830 | mpsa56 transistor | transistor 2222a

 

 

↑ Back to Top
.