NGTB30N120LWG - IGBT. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: NGTB30N120LWG
   Tipo de transistor: IGBT
   Polaridad de transistor: N

ESPECIFICACIONES TECNICAS

   Pcⓘ - Máxima potencia disipada: 260 W
   |Vce|ⓘ - Tensión máxima colector-emisor: 1200 V
   |Vge|ⓘ - Tensión máxima puerta-emisor: 20 V
   |Ic|ⓘ - Colector de Corriente Continua a 25℃: 30 A
   |VCEsat|ⓘ - Voltaje de saturación colector-emisor, typ: 1.75 V @25℃
   Tjⓘ - Temperatura máxima de unión: 150 ℃
   trⓘ - Tiempo de subida, typ: 36 nS
   Coesⓘ - Capacitancia de salida, typ: 245 pF
   Paquete / Cubierta: TO247

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NGTB30N120LWG Datasheet (PDF)

..1. Size:176K onsemi
ngtb30n120lwg.pdf

NGTB30N120LWGIGBTThis Insulated Gate Bipolar Transistor (IGBT) features a robust andcost effective Field Stop (FS) Trench construction, and providessuperior performance in demanding switching applications. Offeringboth low on-state voltage and minimal switching loss, the IGBT iswell suited for resonant or soft switching applications. Incorporatedhttp://onsemi.cominto the device

3.1. Size:102K onsemi
ngtb30n120l2wg.pdf

NGTB30N120L2WGIGBT - Field Stop IIThis Insulated Gate Bipolar Transistor (IGBT) features a robust andcost effective Field Stop II Trench construction, and provides superiorperformance in demanding switching applications, offering both lowon state voltage and minimal switching loss. The IGBT is well suitedfor motor driver applications. Incorporated into the device is a soft andfast

3.2. Size:102K onsemi
ngtb30n120l2.pdf