NGTB30N120LWG Todos los transistores

 

NGTB30N120LWG IGBT Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: NGTB30N120LWG
   Tipo de transistor: IGBT
   Polaridad de transistor: N

ESPECIFICACIONES TECNICAS


   Pcⓘ - Máxima potencia disipada: 260 W
   |Vce|ⓘ - Tensión máxima colector-emisor: 1200 V
   |Vge|ⓘ - Tensión máxima puerta-emisor: 20 V
   |Ic|ⓘ - Colector de Corriente Continua a 25℃: 30 A
   |VCEsat|ⓘ - Voltaje de saturación colector-emisor, typ: 1.75 V @25℃
   Tjⓘ - Temperatura máxima de unión: 150 ℃
   trⓘ - Tiempo de subida, typ: 36 nS
   Coesⓘ - Capacitancia de salida, typ: 245 pF
   Paquete / Cubierta: TO247
 

 Búsqueda de reemplazo de NGTB30N120LWG IGBT

   - Selección ⓘ de transistores por parámetros

 

NGTB30N120LWG PDF specs

 ..1. Size:176K  onsemi
 ngtb30n120lwg.pdf pdf_icon

NGTB30N120LWG

NGTB30N120LWG IGBT This Insulated Gate Bipolar Transistor (IGBT) features a robust and cost effective Field Stop (FS) Trench construction, and provides superior performance in demanding switching applications. Offering both low on-state voltage and minimal switching loss, the IGBT is well suited for resonant or soft switching applications. Incorporated http //onsemi.com into the device ... See More ⇒

 3.1. Size:102K  onsemi
 ngtb30n120l2wg.pdf pdf_icon

NGTB30N120LWG

NGTB30N120L2WG IGBT - Field Stop II This Insulated Gate Bipolar Transistor (IGBT) features a robust and cost effective Field Stop II Trench construction, and provides superior performance in demanding switching applications, offering both low on state voltage and minimal switching loss. The IGBT is well suited for motor driver applications. Incorporated into the device is a soft and fast... See More ⇒

 3.2. Size:102K  onsemi
 ngtb30n120l2.pdf pdf_icon

NGTB30N120LWG

NGTB30N120L2WG IGBT - Field Stop II This Insulated Gate Bipolar Transistor (IGBT) features a robust and cost effective Field Stop II Trench construction, and provides superior performance in demanding switching applications, offering both low on state voltage and minimal switching loss. The IGBT is well suited for motor driver applications. Incorporated into the device is a soft and fast... See More ⇒

 3.3. Size:176K  onsemi
 ngtb30n120l.pdf pdf_icon

NGTB30N120LWG

NGTB30N120LWG IGBT This Insulated Gate Bipolar Transistor (IGBT) features a robust and cost effective Field Stop (FS) Trench construction, and provides superior performance in demanding switching applications. Offering both low on-state voltage and minimal switching loss, the IGBT is well suited for resonant or soft switching applications. Incorporated http //onsemi.com into the device ... See More ⇒

SHOW MORE

Otros transistores... STGW20IH125DF , STGWA15S120DF3 , STGWT20IH125DF , SML75HB06 , MMG50H120X6TN , MMG50S120B6TN , MMG50W120XB6TN , NGTB30N120L , IRG4PC40W , NGTB40N120L , NGTB40N120LWG , STGB30H60DLFB , STGB30V60DF , STGB30V60F , STGP30V60DF , STGP30V60F , STGW15H120DF2 .

 

 
Back to Top

 


 
.