NGTB30N120LWG IGBT. Datasheet pdf. Equivalent

   Type Designator: NGTB30N120LWG
   Type: IGBT
   Type of IGBT Channel: N
   Pcⓘ - Maximum Power Dissipation: 260 W
   |Vce|ⓘ - Maximum Collector-Emitter Voltage: 1200 V
   |Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
   |Ic|ⓘ - Maximum Collector Current: 30 A @25℃
   |VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.75 V @25℃
   Tjⓘ - Maximum Junction Temperature: 150 ℃
   trⓘ - Rise Time, typ: 36 nS
   Coesⓘ - Output Capacitance, typ: 245 pF
   Package: TO247

NGTB30N120LWG Transistor Equivalent Substitute - IGBT Cross-Reference Search

NGTB30N120LWG Datasheet (PDF)

..1. Size:176K onsemi
ngtb30n120lwg.pdf

NGTB30N120LWGIGBTThis Insulated Gate Bipolar Transistor (IGBT) features a robust andcost effective Field Stop (FS) Trench construction, and providessuperior performance in demanding switching applications. Offeringboth low on-state voltage and minimal switching loss, the IGBT iswell suited for resonant or soft switching applications. Incorporatedhttp://onsemi.cominto the device

3.1. Size:102K onsemi
ngtb30n120l2wg.pdf

NGTB30N120L2WGIGBT - Field Stop IIThis Insulated Gate Bipolar Transistor (IGBT) features a robust andcost effective Field Stop II Trench construction, and provides superiorperformance in demanding switching applications, offering both lowon state voltage and minimal switching loss. The IGBT is well suitedfor motor driver applications. Incorporated into the device is a soft andfast

3.2. Size:102K onsemi
ngtb30n120l2.pdf