IGW50N65F5A Todos los transistores

 

IGW50N65F5A - IGBT. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: IGW50N65F5A
   Tipo de transistor: IGBT
   Código de marcado: G50EF5A
   Polaridad de transistor: N

ESPECIFICACIONES TECNICAS


   Pcⓘ - Máxima potencia disipada: 270 W
   |Vce|ⓘ - Tensión máxima colector-emisor: 650 V
   |Vge|ⓘ - Tensión máxima puerta-emisor: 20 V
   |Ic|ⓘ - Colector de Corriente Continua a 25℃: 80 A
   |VCEsat|ⓘ - Voltaje de saturación colector-emisor, typ: 1.66 V @25℃
   |VGEth|ⓘ - Tensión máxima de puerta-umbral: 4.8 V
   Tjⓘ - Temperatura máxima de unión: 175 ℃
   trⓘ - Tiempo de subida, typ: 12 nS
   Coesⓘ - Capacitancia de salida, typ: 51 pF
   Qgⓘ - Carga total de la puerta, typ: 108 nC
   Paquete / Cubierta: TO247
 

 Búsqueda de reemplazo de IGW50N65F5A IGBT

   - Selección ⓘ de transistores por parámetros

 

IGW50N65F5A Datasheet (PDF)

 ..1. Size:1939K  infineon
 igw50n65f5a.pdf pdf_icon

IGW50N65F5A

IGBTHigh speed 5 FAST IGBT in TRENCHSTOPTM 5 technologyIGW50N65F5A650V IGBTHigh speed switching series fifth generationData sheetIndustrial Power ControlIGW50N65F5AHigh speed switching series fifth generationHigh speed 5 FAST IGBT in TRENCHSTOPTM 5 technologyFeatures and Benefits: CHigh speed F5 technology offering Best-in-Class efficiency in hard switching and reson

 4.1. Size:1997K  infineon
 igw50n65f5.pdf pdf_icon

IGW50N65F5A

IGBTHigh speed 5 FAST IGBT in TRENCHSTOPTM 5 technologyIGW50N65F5650V IGBT high speed switching series fifth generationData sheetIndustrial Power ControlIGW50N65F5High speed switching series fifth generationHigh speed 5 FAST IGBT in TRENCHSTOPTM 5 technologyFeatures and Benefits: CHigh speed F5 technology offering Best-in-Class efficiency in hard switching and resonant

 4.2. Size:1788K  infineon
 aigw50n65f5.pdf pdf_icon

IGW50N65F5A

AIGW50N65F5High speed switching series fifth generationHigh speed fast IGBT in TRENCHSTOPTM 5 technologyFeatures and Benefits: C High speed F5 technology offering: Best-in-Class efficiency in hard switching and resonant topologies 650V breakdown voltage Low gate charge Q GG Maximum junction temperature 175C E Dynamically stress tested Qualified accord

 6.1. Size:1782K  infineon
 aigw50n65h5.pdf pdf_icon

IGW50N65F5A

AIGW50N65H5High speed switching series fifth generationHigh speed fast IGBT in TRENCHSTOPTM 5 technologyFeatures and Benefits: C High speed H5 technology offering: Best-in-Class efficiency in hard switching and resonant topologies Plug and play replacement of previous generation IGBTs 650V breakdown voltage G Low gate charge Q EG Maximum junction temperature

MOSTRAR MÁS

Otros transistores... STGWA15H120F2 , STGWT20H65FB , STGWT30H60DFB , STGWT30H65FB , STGWT30V60DF , STGWT30V60F , RJP60F5DPK , IRGP4650D , RJP30E2DPP-M0 , IGW50N65H5A , IKW50N65F5A , IKW50N65H5A , MM30G120B , IRGP4750D , 1MBI50U4F-120L-50 , KGF30N135NDH , IRGP4078D .

 

 
Back to Top

 


 
.