IGW50N65F5A - IGBT. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: IGW50N65F5A
Tipo de transistor: IGBT
Polaridad de transistor: N
ESPECIFICACIONES TECNICAS
Pcⓘ - Máxima potencia disipada: 270 W
|Vce|ⓘ - Tensión máxima colector-emisor: 650 V
|Vge|ⓘ - Tensión máxima puerta-emisor: 20 V
|Ic|ⓘ - Colector de Corriente Continua a 25℃: 80 A
|VCEsat|ⓘ - Voltaje de saturación colector-emisor, typ: 1.66 V @25℃
Tjⓘ - Temperatura máxima de unión: 175 ℃
trⓘ - Tiempo de subida, typ: 12 nS
Coesⓘ - Capacitancia de salida, typ: 51 pF
Paquete / Cubierta: TO247
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IGW50N65F5A Datasheet (PDF)
igw50n65f5a.pdf
IGBTHigh speed 5 FAST IGBT in TRENCHSTOPTM 5 technologyIGW50N65F5A650V IGBTHigh speed switching series fifth generationData sheetIndustrial Power ControlIGW50N65F5AHigh speed switching series fifth generationHigh speed 5 FAST IGBT in TRENCHSTOPTM 5 technologyFeatures and Benefits: CHigh speed F5 technology offering Best-in-Class efficiency in hard switching and reson
igw50n65f5.pdf
IGBTHigh speed 5 FAST IGBT in TRENCHSTOPTM 5 technologyIGW50N65F5650V IGBT high speed switching series fifth generationData sheetIndustrial Power ControlIGW50N65F5High speed switching series fifth generationHigh speed 5 FAST IGBT in TRENCHSTOPTM 5 technologyFeatures and Benefits: CHigh speed F5 technology offering Best-in-Class efficiency in hard switching and resonant
aigw50n65f5.pdf
AIGW50N65F5High speed switching series fifth generationHigh speed fast IGBT in TRENCHSTOPTM 5 technologyFeatures and Benefits: C High speed F5 technology offering: Best-in-Class efficiency in hard switching and resonant topologies 650V breakdown voltage Low gate charge Q GG Maximum junction temperature 175C E Dynamically stress tested Qualified accord
aigw50n65h5.pdf
AIGW50N65H5High speed switching series fifth generationHigh speed fast IGBT in TRENCHSTOPTM 5 technologyFeatures and Benefits: C High speed H5 technology offering: Best-in-Class efficiency in hard switching and resonant topologies Plug and play replacement of previous generation IGBTs 650V breakdown voltage G Low gate charge Q EG Maximum junction temperature
igw50n65h5.pdf
IGBTHigh speed 5 IGBT in TRENCHSTOPTM 5 technologyIGW50N65H5650V IGBT high speed switching series fifth generationData sheetIndustrial Power ControlIGW50N65H5High speed switching series fifth generationHigh speed 5 IGBT in TRENCHSTOPTM 5 technologyFeatures and Benefits: CHigh speed H5 technology offering Best-in-Class efficiency in hard switching and resonanttopologi
igw50n65h5a.pdf
IGBTHigh speed 5 FAST IGBT in TRENCHSTOPTM 5 technologyIGW50N65H5A650V IGBTHigh speed switching series fifth generationData sheetIndustrial Power ControlIGW50N65H5AHigh speed switching series fifth generationHigh speed 5 FAST IGBT in TRENCHSTOPTM 5 technologyFeatures and Benefits: CHigh speed H5 technology offering Best-in-Class efficiency in hard switching and reson
Otros transistores... STGWA15H120F2 , STGWT20H65FB , STGWT30H60DFB , STGWT30H65FB , STGWT30V60DF , STGWT30V60F , RJP60F5DPK , IRGP4650D , CRG40T60AN3H , IGW50N65H5A , IKW50N65F5A , IKW50N65H5A , MM30G120B , IRGP4750D , 1MBI50U4F-120L-50 , KGF30N135NDH , IRGP4078D .
Liste
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