IGW50N65F5A Даташит. Аналоги. Параметры и характеристики.
Наименование: IGW50N65F5A
Тип транзистора: IGBT
Тип управляющего канала: N
Pcⓘ - Максимальная рассеиваемая мощность: 270 W
|Vce|ⓘ - Предельно-допустимое напряжение коллектор-эмиттер: 650 V
|Vge|ⓘ - Максимально допустимое напряжение эмиттер-затвор: 20 V
|Ic|ⓘ - Максимальный постоянный ток коллектора: 80 A @25℃
|VCEsat|ⓘ - Напряжение насыщения коллектор-эмиттер типовое: 1.66 V @25℃
Tjⓘ - Максимальная температура перехода: 175 ℃
trⓘ - Время нарастания типовое: 12 nS
Coesⓘ - Выходная емкость, типовая: 51 pF
Тип корпуса: TO247
- подбор IGBT транзистора по параметрам
IGW50N65F5A Datasheet (PDF)
igw50n65f5a.pdf

IGBTHigh speed 5 FAST IGBT in TRENCHSTOPTM 5 technologyIGW50N65F5A650V IGBTHigh speed switching series fifth generationData sheetIndustrial Power ControlIGW50N65F5AHigh speed switching series fifth generationHigh speed 5 FAST IGBT in TRENCHSTOPTM 5 technologyFeatures and Benefits: CHigh speed F5 technology offering Best-in-Class efficiency in hard switching and reson
igw50n65f5.pdf

IGBTHigh speed 5 FAST IGBT in TRENCHSTOPTM 5 technologyIGW50N65F5650V IGBT high speed switching series fifth generationData sheetIndustrial Power ControlIGW50N65F5High speed switching series fifth generationHigh speed 5 FAST IGBT in TRENCHSTOPTM 5 technologyFeatures and Benefits: CHigh speed F5 technology offering Best-in-Class efficiency in hard switching and resonant
aigw50n65f5.pdf

AIGW50N65F5High speed switching series fifth generationHigh speed fast IGBT in TRENCHSTOPTM 5 technologyFeatures and Benefits: C High speed F5 technology offering: Best-in-Class efficiency in hard switching and resonant topologies 650V breakdown voltage Low gate charge Q GG Maximum junction temperature 175C E Dynamically stress tested Qualified accord
aigw50n65h5.pdf

AIGW50N65H5High speed switching series fifth generationHigh speed fast IGBT in TRENCHSTOPTM 5 technologyFeatures and Benefits: C High speed H5 technology offering: Best-in-Class efficiency in hard switching and resonant topologies Plug and play replacement of previous generation IGBTs 650V breakdown voltage G Low gate charge Q EG Maximum junction temperature
Другие IGBT... APT20GN60BG , APT20GN60KG , APT20GN60SG , AOK20B60D1 , F3L30R06W1E3_B11 , WGW15G120N , WGW15G120W , IRG4MC50U , GT30F131 , AOB10B60D , AOK10B60D , AOT10B60D , NGB8207AB , NGB8207B , AOB15B60D , IRGSL8B60K , AOK15B60D .
History: HGT1S7N60B3D | APT35GP120J | STGWA20HP65FB2 | MMIX4B22N300 | NGTB30N65IHL2 | APTGF180DH60
History: HGT1S7N60B3D | APT35GP120J | STGWA20HP65FB2 | MMIX4B22N300 | NGTB30N65IHL2 | APTGF180DH60



Список транзисторов
Обновления
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