Справочник IGBT. IGW50N65F5A

 

IGW50N65F5A - IGBT справочник. Даташиты. Аналоги. Параметры и характеристики.


   Наименование: IGW50N65F5A
   Тип транзистора: IGBT
   Маркировка: G50EF5A
   Тип управляющего канала: N
   Pcⓘ - Максимальная рассеиваемая мощность: 270 W
   |Vce|ⓘ - Предельно-допустимое напряжение коллектор-эмиттер: 650 V
   |Vge|ⓘ - Максимально допустимое напряжение эмиттер-затвор: 20 V
   |Ic|ⓘ - Максимальный постоянный ток коллектора: 80 A @25℃
   |VCEsat|ⓘ - Напряжение насыщения коллектор-эмиттер типовое: 1.66 V @25℃
   |VGEth|ⓘ - Максимальное пороговое напряжение затвор-эмиттер: 4.8 V
   Tjⓘ - Максимальная температура перехода: 175 ℃
   trⓘ - Время нарастания типовое: 12 nS
   Coesⓘ - Выходная емкость, типовая: 51 pF
   Qgⓘ - Общий заряд затвора, typ: 108 nC
   Тип корпуса: TO247

 Аналог (замена) для IGW50N65F5A

 

 

IGW50N65F5A Datasheet (PDF)

 ..1. Size:1939K  infineon
 igw50n65f5a.pdf

IGW50N65F5A IGW50N65F5A

IGBTHigh speed 5 FAST IGBT in TRENCHSTOPTM 5 technologyIGW50N65F5A650V IGBTHigh speed switching series fifth generationData sheetIndustrial Power ControlIGW50N65F5AHigh speed switching series fifth generationHigh speed 5 FAST IGBT in TRENCHSTOPTM 5 technologyFeatures and Benefits: CHigh speed F5 technology offering Best-in-Class efficiency in hard switching and reson

 4.1. Size:1997K  infineon
 igw50n65f5.pdf

IGW50N65F5A IGW50N65F5A

IGBTHigh speed 5 FAST IGBT in TRENCHSTOPTM 5 technologyIGW50N65F5650V IGBT high speed switching series fifth generationData sheetIndustrial Power ControlIGW50N65F5High speed switching series fifth generationHigh speed 5 FAST IGBT in TRENCHSTOPTM 5 technologyFeatures and Benefits: CHigh speed F5 technology offering Best-in-Class efficiency in hard switching and resonant

 4.2. Size:1788K  infineon
 aigw50n65f5.pdf

IGW50N65F5A IGW50N65F5A

AIGW50N65F5High speed switching series fifth generationHigh speed fast IGBT in TRENCHSTOPTM 5 technologyFeatures and Benefits: C High speed F5 technology offering: Best-in-Class efficiency in hard switching and resonant topologies 650V breakdown voltage Low gate charge Q GG Maximum junction temperature 175C E Dynamically stress tested Qualified accord

 6.1. Size:1782K  infineon
 aigw50n65h5.pdf

IGW50N65F5A IGW50N65F5A

AIGW50N65H5High speed switching series fifth generationHigh speed fast IGBT in TRENCHSTOPTM 5 technologyFeatures and Benefits: C High speed H5 technology offering: Best-in-Class efficiency in hard switching and resonant topologies Plug and play replacement of previous generation IGBTs 650V breakdown voltage G Low gate charge Q EG Maximum junction temperature

 6.2. Size:1996K  infineon
 igw50n65h5.pdf

IGW50N65F5A IGW50N65F5A

IGBTHigh speed 5 IGBT in TRENCHSTOPTM 5 technologyIGW50N65H5650V IGBT high speed switching series fifth generationData sheetIndustrial Power ControlIGW50N65H5High speed switching series fifth generationHigh speed 5 IGBT in TRENCHSTOPTM 5 technologyFeatures and Benefits: CHigh speed H5 technology offering Best-in-Class efficiency in hard switching and resonanttopologi

 6.3. Size:1935K  infineon
 igw50n65h5a.pdf

IGW50N65F5A IGW50N65F5A

IGBTHigh speed 5 FAST IGBT in TRENCHSTOPTM 5 technologyIGW50N65H5A650V IGBTHigh speed switching series fifth generationData sheetIndustrial Power ControlIGW50N65H5AHigh speed switching series fifth generationHigh speed 5 FAST IGBT in TRENCHSTOPTM 5 technologyFeatures and Benefits: CHigh speed H5 technology offering Best-in-Class efficiency in hard switching and reson

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