NGTB15N120IH Todos los transistores

 

NGTB15N120IH IGBT Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: NGTB15N120IH

Tipo de transistor: IGBT

Polaridad de transistor: N

ESPECIFICACIONES TECNICAS

Pcⓘ - Máxima potencia disipada: 139 W

|Vce|ⓘ - Tensión máxima colector-emisor: 1200 V

|Vge|ⓘ - Tensión máxima puerta-emisor: 20 V

|Ic|ⓘ - Colector de Corriente Continua a 25℃: 15 A

Tjⓘ - Temperatura máxima de unión: 175 ℃

CARACTERÍSTICAS ELÉCTRICAS

|VCEsat|ⓘ - Voltaje de saturación colector-emisor, typ: 2.1 V @25℃

Coesⓘ - Capacitancia de salida, typ: 65 pF

Encapsulados: TO247

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NGTB15N120IH datasheet

 ..1. Size:124K  onsemi
 ngtb15n120ih.pdf pdf_icon

NGTB15N120IH

NGTB15N120IHWG Product Preview IGBT This Insulated Gate Bipolar Transistor (IGBT) features a robust and cost effective Field Stop (FS) Trench construction, and provides superior performance in demanding switching applications, offering both low on-state voltage and minimal switching loss. The IGBT is http //onsemi.com well suited for resonant or soft switching applications. 15 A, 1200

 0.1. Size:175K  onsemi
 ngtb15n120ihr.pdf pdf_icon

NGTB15N120IH

NGTB15N120IHRWG IGBT with Monolithic Free Wheeling Diode This Insulated Gate Bipolar Transistor (IGBT) features a robust and cost effective Field Stop (FS) Trench construction, and provides superior performance in demanding switching applications, offering both low on-state voltage and minimal switching loss. The IGBT is http //onsemi.com well suited for resonant or soft switching appli

 0.2. Size:172K  onsemi
 ngtb15n120ihl.pdf pdf_icon

NGTB15N120IH

NGTB15N120IHLWG IGBT This Insulated Gate Bipolar Transistor (IGBT) features a robust and cost effective Field Stop (FS) Trench construction, and provides superior performance in demanding switching applications, offering both low on-state voltage and minimal switching loss. The IGBT is well suited for resonant or soft switching applications. Incorporated http //onsemi.com into the devic

 0.3. Size:175K  onsemi
 ngtb15n120ihrwg.pdf pdf_icon

NGTB15N120IH

NGTB15N120IHRWG IGBT with Monolithic Free Wheeling Diode This Insulated Gate Bipolar Transistor (IGBT) features a robust and cost effective Field Stop (FS) Trench construction, and provides superior performance in demanding switching applications, offering both low on-state voltage and minimal switching loss. The IGBT is http //onsemi.com well suited for resonant or soft switching appli

MOSTRAR MÁS

Otros transistores... IGW50N65H5A , IKW50N65F5A , IKW50N65H5A , MM30G120B , IRGP4750D , 1MBI50U4F-120L-50 , KGF30N135NDH , IRGP4078D , GT30F126 , NGTB15N120IHWG , IHW50N65R5 , IKW50N65WR5 , STGB40V60F , STGP40V60F , STGW15M120DF3 , STGW40H60DLFB , STGW40H65DFB .

History: STGWA50M65DF2 | TGAN40N60F2D | STGWT40H65DFB | SGP15N60RUF | SGW13N60UF | SRE30N065FSUDG | XP035PJE120AT1B2

 

 

 

 

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