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NGTB15N120IH - IGBT. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: NGTB15N120IH

Código: 15N120IH

Polaridad de transistor: N-Channel

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pc): 139

Tensión colector-emisor (Vce): 1200

Voltaje de saturación colector-emisor (Vce sat): 2.1

Tensión emisor-compuerta (Veg): 20

Corriente del colector DC máxima (Ic): 15

Temperatura operativa máxima (Tj), °C: 175

Tiempo de elevación:

Capacitancia de salida (Cc), pF: 65

Empaquetado / Estuche: TO247

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NGTB15N120IH Datasheet (PDF)

1.1. ngtb15n120fl2.pdf Size:233K _igbt

NGTB15N120IH
NGTB15N120IH

NGTB15N120FL2WG IGBT - Field Stop II This Insulated Gate Bipolar Transistor (IGBT) features a robust and cost effective Field Stop II Trench construction, and provides superior performance in demanding switching applications, offering both low on state voltage and minimal switching loss. The IGBT is well suited for UPS and solar applications. Incorporated into the device is a soft and fa

1.2. ngtb15n120lwg.pdf Size:175K _igbt

NGTB15N120IH
NGTB15N120IH

NGTB15N120LWG IGBT This Insulated Gate Bipolar Transistor (IGBT) features a robust and cost effective Field Stop (FS) Trench construction, and provides superior performance in demanding switching applications, offering both low on-state voltage and minimal switching loss. The IGBT is well suited for resonant or soft switching applications. Incorporated http://onsemi.com into the device

1.3. ngtb15n120flwg.pdf Size:185K _igbt

NGTB15N120IH
NGTB15N120IH

NGTB15N120FLWG IGBT This Insulated Gate Bipolar Transistor (IGBT) features a robust and cost effective Trench construction, and provides superior performance in demanding switching applications, offering both low on state voltage and minimal switching loss. The IGBT is well suited for UPS and solar applications. Incorporated into the device is a soft and fast co-packaged free wheeling di

1.4. ngtb15n120l.pdf Size:175K _igbt

NGTB15N120IH
NGTB15N120IH

NGTB15N120LWG IGBT This Insulated Gate Bipolar Transistor (IGBT) features a robust and cost effective Field Stop (FS) Trench construction, and provides superior performance in demanding switching applications, offering both low on-state voltage and minimal switching loss. The IGBT is well suited for resonant or soft switching applications. Incorporated http://onsemi.com into the device

1.5. ngtb15n120ihl.pdf Size:172K _igbt

NGTB15N120IH
NGTB15N120IH

NGTB15N120IHLWG IGBT This Insulated Gate Bipolar Transistor (IGBT) features a robust and cost effective Field Stop (FS) Trench construction, and provides superior performance in demanding switching applications, offering both low on-state voltage and minimal switching loss. The IGBT is well suited for resonant or soft switching applications. Incorporated http://onsemi.com into the devic

1.6. ngtb15n120fl.pdf Size:185K _igbt

NGTB15N120IH
NGTB15N120IH

NGTB15N120FLWG IGBT This Insulated Gate Bipolar Transistor (IGBT) features a robust and cost effective Trench construction, and provides superior performance in demanding switching applications, offering both low on state voltage and minimal switching loss. The IGBT is well suited for UPS and solar applications. Incorporated into the device is a soft and fast co-packaged free wheeling di

1.7. ngtb15n120fl2wg.pdf Size:233K _igbt

NGTB15N120IH
NGTB15N120IH

NGTB15N120FL2WG IGBT - Field Stop II This Insulated Gate Bipolar Transistor (IGBT) features a robust and cost effective Field Stop II Trench construction, and provides superior performance in demanding switching applications, offering both low on state voltage and minimal switching loss. The IGBT is well suited for UPS and solar applications. Incorporated into the device is a soft and fa

1.8. ngtb15n120ihr.pdf Size:175K _igbt

NGTB15N120IH
NGTB15N120IH

NGTB15N120IHRWG IGBT with Monolithic Free Wheeling Diode This Insulated Gate Bipolar Transistor (IGBT) features a robust and cost effective Field Stop (FS) Trench construction, and provides superior performance in demanding switching applications, offering both low on-state voltage and minimal switching loss. The IGBT is http://onsemi.com well suited for resonant or soft switching appli

1.9. ngtb15n120ihwg.pdf Size:124K _igbt

NGTB15N120IH
NGTB15N120IH

NGTB15N120IHWG Product Preview IGBT This Insulated Gate Bipolar Transistor (IGBT) features a robust and cost effective Field Stop (FS) Trench construction, and provides superior performance in demanding switching applications, offering both low on-state voltage and minimal switching loss. The IGBT is http://onsemi.com well suited for resonant or soft switching applications. 15 A, 1200

1.10. ngtb15n120ih.pdf Size:124K _igbt

NGTB15N120IH
NGTB15N120IH

NGTB15N120IHWG Product Preview IGBT This Insulated Gate Bipolar Transistor (IGBT) features a robust and cost effective Field Stop (FS) Trench construction, and provides superior performance in demanding switching applications, offering both low on-state voltage and minimal switching loss. The IGBT is http://onsemi.com well suited for resonant or soft switching applications. 15 A, 1200

1.11. ngtb15n120ihrwg.pdf Size:175K _igbt

NGTB15N120IH
NGTB15N120IH

NGTB15N120IHRWG IGBT with Monolithic Free Wheeling Diode This Insulated Gate Bipolar Transistor (IGBT) features a robust and cost effective Field Stop (FS) Trench construction, and provides superior performance in demanding switching applications, offering both low on-state voltage and minimal switching loss. The IGBT is http://onsemi.com well suited for resonant or soft switching appli

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Introduzca al menos 1 números o letras