NGTB15N120IH - аналоги и описание IGBT

 

NGTB15N120IH - аналоги, основные параметры, даташиты

Наименование: NGTB15N120IH

Тип транзистора: IGBT

Тип управляющего канала: N

Предельные значения

Pc ⓘ - Максимальная рассеиваемая мощность: 139 W

|Vce|ⓘ - Предельно-допустимое напряжение коллектор-эмиттер: 1200 V

|Vge|ⓘ - Максимально допустимое напряжение эмиттер-затвор: 20 V

|Ic| ⓘ - Максимальный постоянный ток коллектора: 15 A @25℃

Tj ⓘ - Максимальная температура перехода: 175 ℃

Электрические характеристики

|VCEsat|ⓘ - Напряжение насыщения коллектор-эмиттер типовое: 2.1 V @25℃

Coesⓘ - Выходная емкость, типовая: 65 pF

Тип корпуса: TO247

 Аналог (замена) для NGTB15N120IH

- подбор ⓘ IGBT транзистора по параметрам

 

NGTB15N120IH даташит

 ..1. Size:124K  onsemi
 ngtb15n120ih.pdf pdf_icon

NGTB15N120IH

NGTB15N120IHWG Product Preview IGBT This Insulated Gate Bipolar Transistor (IGBT) features a robust and cost effective Field Stop (FS) Trench construction, and provides superior performance in demanding switching applications, offering both low on-state voltage and minimal switching loss. The IGBT is http //onsemi.com well suited for resonant or soft switching applications. 15 A, 1200

 0.1. Size:175K  onsemi
 ngtb15n120ihr.pdf pdf_icon

NGTB15N120IH

NGTB15N120IHRWG IGBT with Monolithic Free Wheeling Diode This Insulated Gate Bipolar Transistor (IGBT) features a robust and cost effective Field Stop (FS) Trench construction, and provides superior performance in demanding switching applications, offering both low on-state voltage and minimal switching loss. The IGBT is http //onsemi.com well suited for resonant or soft switching appli

 0.2. Size:172K  onsemi
 ngtb15n120ihl.pdf pdf_icon

NGTB15N120IH

NGTB15N120IHLWG IGBT This Insulated Gate Bipolar Transistor (IGBT) features a robust and cost effective Field Stop (FS) Trench construction, and provides superior performance in demanding switching applications, offering both low on-state voltage and minimal switching loss. The IGBT is well suited for resonant or soft switching applications. Incorporated http //onsemi.com into the devic

 0.3. Size:175K  onsemi
 ngtb15n120ihrwg.pdf pdf_icon

NGTB15N120IH

NGTB15N120IHRWG IGBT with Monolithic Free Wheeling Diode This Insulated Gate Bipolar Transistor (IGBT) features a robust and cost effective Field Stop (FS) Trench construction, and provides superior performance in demanding switching applications, offering both low on-state voltage and minimal switching loss. The IGBT is http //onsemi.com well suited for resonant or soft switching appli

ПОКАЗАТЬ ЕЩЁ

Другие IGBT... IGW50N65H5A , IKW50N65F5A , IKW50N65H5A , MM30G120B , IRGP4750D , 1MBI50U4F-120L-50 , KGF30N135NDH , IRGP4078D , GT30F126 , NGTB15N120IHWG , IHW50N65R5 , IKW50N65WR5 , STGB40V60F , STGP40V60F , STGW15M120DF3 , STGW40H60DLFB , STGW40H65DFB .

 

 

 

 

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