NGTB15N120IHWG Todos los transistores

 

NGTB15N120IHWG - IGBT. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: NGTB15N120IHWG
   Tipo de transistor: IGBT
   Polaridad de transistor: N

ESPECIFICACIONES TECNICAS


   Pcⓘ - Máxima potencia disipada: 139 W
   |Vce|ⓘ - Tensión máxima colector-emisor: 1200 V
   |Vge|ⓘ - Tensión máxima puerta-emisor: 20 V
   |Ic|ⓘ - Colector de Corriente Continua a 25℃: 15 A
   |VCEsat|ⓘ - Voltaje de saturación colector-emisor, typ: 2.1 V @25℃
   Tjⓘ - Temperatura máxima de unión: 175 ℃
   Coesⓘ - Capacitancia de salida, typ: 65 pF
   Paquete / Cubierta: TO247
 

 Búsqueda de reemplazo de NGTB15N120IHWG IGBT

   - Selección ⓘ de transistores por parámetros

 

NGTB15N120IHWG Datasheet (PDF)

 ..1. Size:124K  onsemi
 ngtb15n120ihwg.pdf pdf_icon

NGTB15N120IHWG

NGTB15N120IHWGProduct PreviewIGBTThis Insulated Gate Bipolar Transistor (IGBT) features a robust andcost effective Field Stop (FS) Trench construction, and providessuperior performance in demanding switching applications, offeringboth low on-state voltage and minimal switching loss. The IGBT ishttp://onsemi.comwell suited for resonant or soft switching applications.15 A, 1200

 2.1. Size:124K  onsemi
 ngtb15n120ih.pdf pdf_icon

NGTB15N120IHWG

NGTB15N120IHWGProduct PreviewIGBTThis Insulated Gate Bipolar Transistor (IGBT) features a robust andcost effective Field Stop (FS) Trench construction, and providessuperior performance in demanding switching applications, offeringboth low on-state voltage and minimal switching loss. The IGBT ishttp://onsemi.comwell suited for resonant or soft switching applications.15 A, 1200

 2.2. Size:175K  onsemi
 ngtb15n120ihr.pdf pdf_icon

NGTB15N120IHWG

NGTB15N120IHRWGIGBT with Monolithic FreeWheeling DiodeThis Insulated Gate Bipolar Transistor (IGBT) features a robust andcost effective Field Stop (FS) Trench construction, and providessuperior performance in demanding switching applications, offeringboth low on-state voltage and minimal switching loss. The IGBT ishttp://onsemi.comwell suited for resonant or soft switching appli

 2.3. Size:172K  onsemi
 ngtb15n120ihl.pdf pdf_icon

NGTB15N120IHWG

NGTB15N120IHLWGIGBTThis Insulated Gate Bipolar Transistor (IGBT) features a robust andcost effective Field Stop (FS) Trench construction, and providessuperior performance in demanding switching applications, offeringboth low on-state voltage and minimal switching loss. The IGBT iswell suited for resonant or soft switching applications. Incorporatedhttp://onsemi.cominto the devic

MOSTRAR MÁS

Otros transistores... IKW50N65F5A , IKW50N65H5A , MM30G120B , IRGP4750D , 1MBI50U4F-120L-50 , KGF30N135NDH , IRGP4078D , NGTB15N120IH , SGT50T65FD1PN , IHW50N65R5 , IKW50N65WR5 , STGB40V60F , STGP40V60F , STGW15M120DF3 , STGW40H60DLFB , STGW40H65DFB , STGW40H65FB .

History: IXGX120N60B | MKI100-12E8 | NCE75TD120VT | APT50GS60BRDQ2G | MIG10Q806H

 

 
Back to Top

 


 
.