NGTB15N120IHWG PDF and Equivalents Search

 

NGTB15N120IHWG Specs and Replacement

Type Designator: NGTB15N120IHWG

Type: IGBT

Type of IGBT Channel: N

Absolute Maximum Ratings

Pc ⓘ - Maximum Power Dissipation: 139 W

|Vce|ⓘ - Maximum Collector-Emitter Voltage: 1200 V

|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V

|Ic| ⓘ - Maximum Collector Current: 15 A @25℃

Tj ⓘ - Maximum Junction Temperature: 175 ℃

Electrical Characteristics

|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 2.1 V @25℃

Coesⓘ - Output Capacitance, typ: 65 pF

Package: TO247

 NGTB15N120IHWG Substitution

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NGTB15N120IHWG datasheet

 ..1. Size:124K  onsemi
 ngtb15n120ihwg.pdf pdf_icon

NGTB15N120IHWG

NGTB15N120IHWG Product Preview IGBT This Insulated Gate Bipolar Transistor (IGBT) features a robust and cost effective Field Stop (FS) Trench construction, and provides superior performance in demanding switching applications, offering both low on-state voltage and minimal switching loss. The IGBT is http //onsemi.com well suited for resonant or soft switching applications. 15 A, 1200 ... See More ⇒

 2.1. Size:124K  onsemi
 ngtb15n120ih.pdf pdf_icon

NGTB15N120IHWG

NGTB15N120IHWG Product Preview IGBT This Insulated Gate Bipolar Transistor (IGBT) features a robust and cost effective Field Stop (FS) Trench construction, and provides superior performance in demanding switching applications, offering both low on-state voltage and minimal switching loss. The IGBT is http //onsemi.com well suited for resonant or soft switching applications. 15 A, 1200 ... See More ⇒

 2.2. Size:175K  onsemi
 ngtb15n120ihr.pdf pdf_icon

NGTB15N120IHWG

NGTB15N120IHRWG IGBT with Monolithic Free Wheeling Diode This Insulated Gate Bipolar Transistor (IGBT) features a robust and cost effective Field Stop (FS) Trench construction, and provides superior performance in demanding switching applications, offering both low on-state voltage and minimal switching loss. The IGBT is http //onsemi.com well suited for resonant or soft switching appli... See More ⇒

 2.3. Size:172K  onsemi
 ngtb15n120ihl.pdf pdf_icon

NGTB15N120IHWG

NGTB15N120IHLWG IGBT This Insulated Gate Bipolar Transistor (IGBT) features a robust and cost effective Field Stop (FS) Trench construction, and provides superior performance in demanding switching applications, offering both low on-state voltage and minimal switching loss. The IGBT is well suited for resonant or soft switching applications. Incorporated http //onsemi.com into the devic... See More ⇒

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Specs: IKW50N65F5A , IKW50N65H5A , MM30G120B , IRGP4750D , 1MBI50U4F-120L-50 , KGF30N135NDH , IRGP4078D , NGTB15N120IH , IHW20N120R3 , IHW50N65R5 , IKW50N65WR5 , STGB40V60F , STGP40V60F , STGW15M120DF3 , STGW40H60DLFB , STGW40H65DFB , STGW40H65FB .

History: VS-GB150LH120N | TT025N120EQ | YGW50N65F1A | SIGC03T60SNC | STGW50HF60SD | STGWA40H65FB

Keywords - NGTB15N120IHWG transistor spec

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