All IGBT. NGTB15N120IHWG Datasheet

 

NGTB15N120IHWG IGBT. Datasheet pdf. Equivalent


   Type Designator: NGTB15N120IHWG
   Type: IGBT + Anti-Parallel Diode
   Marking Code: 15N120IH
   Type of IGBT Channel: N
   Pcⓘ - Maximum Power Dissipation: 139 W
   |Vce|ⓘ - Maximum Collector-Emitter Voltage: 1200 V
   |Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
   |Ic|ⓘ - Maximum Collector Current: 15 A @25℃
   |VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 2.1 V @25℃
   |VGEth|ⓘ - Maximum G-E Threshold Voltag: 6.5 V
   Tjⓘ - Maximum Junction Temperature: 175 ℃
   Coesⓘ - Output Capacitance, typ: 65 pF
   Qgⓘ - Total Gate Charge, typ: 120 nC
   Package: TO247

 NGTB15N120IHWG Transistor Equivalent Substitute - IGBT Cross-Reference Search

 

NGTB15N120IHWG Datasheet (PDF)

 ..1. Size:124K  onsemi
 ngtb15n120ihwg.pdf

NGTB15N120IHWG NGTB15N120IHWG

NGTB15N120IHWGProduct PreviewIGBTThis Insulated Gate Bipolar Transistor (IGBT) features a robust andcost effective Field Stop (FS) Trench construction, and providessuperior performance in demanding switching applications, offeringboth low on-state voltage and minimal switching loss. The IGBT ishttp://onsemi.comwell suited for resonant or soft switching applications.15 A, 1200

 2.1. Size:124K  onsemi
 ngtb15n120ih.pdf

NGTB15N120IHWG NGTB15N120IHWG

NGTB15N120IHWGProduct PreviewIGBTThis Insulated Gate Bipolar Transistor (IGBT) features a robust andcost effective Field Stop (FS) Trench construction, and providessuperior performance in demanding switching applications, offeringboth low on-state voltage and minimal switching loss. The IGBT ishttp://onsemi.comwell suited for resonant or soft switching applications.15 A, 1200

 2.2. Size:175K  onsemi
 ngtb15n120ihr.pdf

NGTB15N120IHWG NGTB15N120IHWG

NGTB15N120IHRWGIGBT with Monolithic FreeWheeling DiodeThis Insulated Gate Bipolar Transistor (IGBT) features a robust andcost effective Field Stop (FS) Trench construction, and providessuperior performance in demanding switching applications, offeringboth low on-state voltage and minimal switching loss. The IGBT ishttp://onsemi.comwell suited for resonant or soft switching appli

 2.3. Size:172K  onsemi
 ngtb15n120ihl.pdf

NGTB15N120IHWG NGTB15N120IHWG

NGTB15N120IHLWGIGBTThis Insulated Gate Bipolar Transistor (IGBT) features a robust andcost effective Field Stop (FS) Trench construction, and providessuperior performance in demanding switching applications, offeringboth low on-state voltage and minimal switching loss. The IGBT iswell suited for resonant or soft switching applications. Incorporatedhttp://onsemi.cominto the devic

 2.4. Size:175K  onsemi
 ngtb15n120ihrwg.pdf

NGTB15N120IHWG NGTB15N120IHWG

NGTB15N120IHRWGIGBT with Monolithic FreeWheeling DiodeThis Insulated Gate Bipolar Transistor (IGBT) features a robust andcost effective Field Stop (FS) Trench construction, and providessuperior performance in demanding switching applications, offeringboth low on-state voltage and minimal switching loss. The IGBT ishttp://onsemi.comwell suited for resonant or soft switching appli

Datasheet: APT20GN60BG , APT20GN60KG , APT20GN60SG , AOK20B60D1 , F3L30R06W1E3_B11 , WGW15G120N , WGW15G120W , IRG4MC50U , CRG60T60AK3HD , AOB10B60D , AOK10B60D , AOT10B60D , NGB8207AB , NGB8207B , AOB15B60D , IRGSL8B60K , AOK15B60D .

 

 
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