IKW50N65WR5 IGBT Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: IKW50N65WR5
Tipo de transistor: IGBT
Polaridad de transistor: N
ESPECIFICACIONES TECNICAS
Pcⓘ - Máxima potencia disipada: 282 W
|Vce|ⓘ - Tensión máxima colector-emisor: 650 V
|Vge|ⓘ - Tensión máxima puerta-emisor: 20 V
|Ic|ⓘ - Colector de Corriente Continua a 25℃: 80 A
|VCEsat|ⓘ - Voltaje de saturación colector-emisor, typ: 1.4 V @25℃
Tjⓘ - Temperatura máxima de unión: 175 ℃
trⓘ - Tiempo de subida, typ: 33 nS
Coesⓘ - Capacitancia de salida, typ: 55 pF
Paquete / Cubierta: TO247
Búsqueda de reemplazo de IKW50N65WR5 IGBT
Principales características: IKW50N65WR5
ikw50n65wr5.pdf
Reverse Conducting Series Reverse conducting IGBT with monolithic body diode IKW50N65WR5 Data sheet Inductrial Power Control IKW50N65WR5 Reverse Conducting Series Reverse conducting IGBT with monolithic body diode C Features Powerful monolithic diode optimized for ZCS applications TRENCHSTOPTM 5 technology applications offers - high ruggedness, temperature stable behavior
ikw50n65h5a.pdf
IGBT High speed 5 FAST IGBT in TRENCHSTOPTM 5 technology copacked with RAPID 1 fast and soft antiparallel diode IKW50N65H5A 650V DuoPack IGBT and diode High speed switching series fifth generation Data sheet Industrial Power Control IKW50N65H5A High speed switching series fifth generation High speed 5 FAST IGBT in TRENCHSTOPTM 5 technology copacked with RAPID 1 fast and soft antipar
aikw50n65dh5.pdf
AIKW50N65DH5 High speed switching series fifth generation High speed fast IGBT in TRENCHSTOPTM 5 technology copacked with RAPID 1 fast and soft antiparallel diode C Features and Benefits High speed H5 technology offering Best-in-Class efficiency in hard switching and resonant topologies Plug and play replacement of previous generation IGBTs G 650V breakdown voltage E
ikw50n65eh5.pdf
IKW50N65EH5 High speed series fifth generation High speed 5 IGBT in TRENCHSTOPTM 5 technology copacked with full-rated RAPID 1 fast and soft antiparallel diode C Features and Benefits High speed H5 technology offering Best-in-Class efficiency in hard switching and resonant topologies Plug and play replacement of previous generation IGBTs G 650V breakdown voltage E
Otros transistores... MM30G120B , IRGP4750D , 1MBI50U4F-120L-50 , KGF30N135NDH , IRGP4078D , NGTB15N120IH , NGTB15N120IHWG , IHW50N65R5 , FGH60N60SFD , STGB40V60F , STGP40V60F , STGW15M120DF3 , STGW40H60DLFB , STGW40H65DFB , STGW40H65FB , STGW40V60DF , STGW40V60DLF .
Liste
Recientemente añadidas las descripciónes de los transistores
IGBT: JJT40N120SE | JJT40N120HE | JJT30N65UE | JJT30N65SY | JJT30N65SS | JJT30N65SE | JJT40N65UH | JJT40N65UE | JJT40N65LE | JJT40N65HE | JJT40N135UE
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