IKW50N65WR5 Todos los transistores

 

IKW50N65WR5 - IGBT. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: IKW50N65WR5
   Tipo de transistor: IGBT
   Polaridad de transistor: N

ESPECIFICACIONES TECNICAS


   Pcⓘ - Máxima potencia disipada: 282 W
   |Vce|ⓘ - Tensión máxima colector-emisor: 650 V
   |Vge|ⓘ - Tensión máxima puerta-emisor: 20 V
   |Ic|ⓘ - Colector de Corriente Continua a 25℃: 80 A
   |VCEsat|ⓘ - Voltaje de saturación colector-emisor, typ: 1.4 V @25℃
   Tjⓘ - Temperatura máxima de unión: 175 ℃
   trⓘ - Tiempo de subida, typ: 33 nS
   Coesⓘ - Capacitancia de salida, typ: 55 pF
   Paquete / Cubierta: TO247
     - Selección de transistores por parámetros

 

IKW50N65WR5 Datasheet (PDF)

 ..1. Size:1913K  infineon
ikw50n65wr5.pdf pdf_icon

IKW50N65WR5

Reverse Conducting SeriesReverse conducting IGBT with monolithic body diodeIKW50N65WR5Data sheetInductrial Power ControlIKW50N65WR5Reverse Conducting SeriesReverse conducting IGBT with monolithic body diodeCFeatures: Powerful monolithic diode optimized for ZCS applications TRENCHSTOPTM 5 technology applications offers:- high ruggedness, temperature stable behavior

 6.1. Size:2112K  infineon
ikw50n65h5a.pdf pdf_icon

IKW50N65WR5

IGBTHigh speed 5 FAST IGBT in TRENCHSTOPTM 5 technology copacked with RAPID 1fast and soft antiparallel diodeIKW50N65H5A650V DuoPack IGBT and diodeHigh speed switching series fifth generationData sheetIndustrial Power ControlIKW50N65H5AHigh speed switching series fifth generationHigh speed 5 FAST IGBT in TRENCHSTOPTM 5 technology copacked withRAPID 1 fast and soft antipar

 6.2. Size:1980K  infineon
aikw50n65dh5.pdf pdf_icon

IKW50N65WR5

AIKW50N65DH5High speed switching series fifth generationHigh speed fast IGBT in TRENCHSTOPTM 5 technology copacked withRAPID 1 fast and soft antiparallel diodeCFeatures and Benefits: High speed H5 technology offering: Best-in-Class efficiency in hard switching and resonant topologies Plug and play replacement of previous generation IGBTsG 650V breakdown voltageE

 6.3. Size:1985K  infineon
ikw50n65eh5.pdf pdf_icon

IKW50N65WR5

IKW50N65EH5High speed series fifth generationHigh speed 5 IGBT in TRENCHSTOPTM 5 technology copacked with full-ratedRAPID 1 fast and soft antiparallel diodeCFeatures and Benefits:High speed H5 technology offering Best-in-Class efficiency in hard switching and resonanttopologies Plug and play replacement of previous generation IGBTsG 650V breakdown voltageE

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History: SGM50PA12A6BTFD | AUIRGS4062D1 | IXGP12N100

 

 
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History: SGM50PA12A6BTFD | AUIRGS4062D1 | IXGP12N100

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