IKW50N65WR5 Даташит. Аналоги. Параметры и характеристики.
Наименование: IKW50N65WR5
Тип транзистора: IGBT + Diode
Маркировка: K50EWR5
Тип управляющего канала: N
Pc ⓘ - Максимальная рассеиваемая мощность: 282 W
|Vce|ⓘ - Предельно-допустимое напряжение коллектор-эмиттер: 650 V
|Vge|ⓘ - Максимально допустимое напряжение эмиттер-затвор: 20 V
|Ic| ⓘ - Максимальный постоянный ток коллектора: 80 A @25℃
|VCEsat|ⓘ - Напряжение насыщения коллектор-эмиттер типовое: 1.4 V @25℃
|VGEth|ⓘ - Максимальное пороговое напряжение затвор-эмиттер: 4.8 V
Tj ⓘ - Максимальная температура перехода: 175 ℃
tr ⓘ - Время нарастания типовое: 33 nS
Coesⓘ - Выходная емкость, типовая: 55 pF
Qg ⓘ - Общий заряд затвора, typ: 230 nC
Тип корпуса: TO247
Аналог (замена) для IKW50N65WR5
IKW50N65WR5 Datasheet (PDF)
ikw50n65wr5.pdf

Reverse Conducting SeriesReverse conducting IGBT with monolithic body diodeIKW50N65WR5Data sheetInductrial Power ControlIKW50N65WR5Reverse Conducting SeriesReverse conducting IGBT with monolithic body diodeCFeatures: Powerful monolithic diode optimized for ZCS applications TRENCHSTOPTM 5 technology applications offers:- high ruggedness, temperature stable behavior
ikw50n65h5a.pdf

IGBTHigh speed 5 FAST IGBT in TRENCHSTOPTM 5 technology copacked with RAPID 1fast and soft antiparallel diodeIKW50N65H5A650V DuoPack IGBT and diodeHigh speed switching series fifth generationData sheetIndustrial Power ControlIKW50N65H5AHigh speed switching series fifth generationHigh speed 5 FAST IGBT in TRENCHSTOPTM 5 technology copacked withRAPID 1 fast and soft antipar
aikw50n65dh5.pdf

AIKW50N65DH5High speed switching series fifth generationHigh speed fast IGBT in TRENCHSTOPTM 5 technology copacked withRAPID 1 fast and soft antiparallel diodeCFeatures and Benefits: High speed H5 technology offering: Best-in-Class efficiency in hard switching and resonant topologies Plug and play replacement of previous generation IGBTsG 650V breakdown voltageE
ikw50n65eh5.pdf

IKW50N65EH5High speed series fifth generationHigh speed 5 IGBT in TRENCHSTOPTM 5 technology copacked with full-ratedRAPID 1 fast and soft antiparallel diodeCFeatures and Benefits:High speed H5 technology offering Best-in-Class efficiency in hard switching and resonanttopologies Plug and play replacement of previous generation IGBTsG 650V breakdown voltageE
Другие IGBT... MM30G120B , IRGP4750D , 1MBI50U4F-120L-50 , KGF30N135NDH , IRGP4078D , NGTB15N120IH , NGTB15N120IHWG , IHW50N65R5 , IKW75N60T , STGB40V60F , STGP40V60F , STGW15M120DF3 , STGW40H60DLFB , STGW40H65DFB , STGW40H65FB , STGW40V60DF , STGW40V60DLF .
History: APTGT75TA120P | BSM30GD60DLC_E3224
History: APTGT75TA120P | BSM30GD60DLC_E3224



Список транзисторов
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