NGTB15N120FL2WG
- IGBT. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: NGTB15N120FL2WG
Tipo de transistor: IGBT + Diode
Código de marcado: 15N120FL2
Polaridad de transistor: N
ESPECIFICACIONES TECNICAS
Pcⓘ - Máxima potencia disipada: 147
W
|Vce|ⓘ - Tensión máxima colector-emisor: 1200
V
|Vge|ⓘ - Tensión máxima puerta-emisor: 20
V
|Ic|ⓘ - Colector de Corriente Continua a 25℃: 15
A
|VCEsat|ⓘ -
Voltaje de saturación colector-emisor, typ: 2
V @25℃
|VGEth|ⓘ -
Tensión máxima de puerta-umbral: 6.5
V
Tjⓘ -
Temperatura máxima de unión: 175
℃
trⓘ - Tiempo de subida, typ: 104
nS
Coesⓘ - Capacitancia de salida, typ: 88
pF
Qgⓘ - Carga total de la puerta, typ: 109
nC
Paquete / Cubierta:
TO247
Búsqueda de reemplazo de NGTB15N120FL2WG
- IGBT
NGTB15N120FL2WG
Datasheet (PDF)
0.1. Size:267K onsemi
ngtb15n120fl2wg.pdf 
NGTB15N120FL2WGIGBT - Field Stop IIThis Insulated Gate Bipolar Transistor (IGBT) features a robust andcost effective Field Stop II Trench construction, and provides superiorperformance in demanding switching applications, offering both lowon state voltage and minimal switching loss. The IGBT is well suitedfor UPS and solar applications. Incorporated into the device is a softwww.on
1.1. Size:233K onsemi
ngtb15n120fl2.pdf
NGTB15N120FL2WGIGBT - Field Stop IIThis Insulated Gate Bipolar Transistor (IGBT) features a robust andcost effective Field Stop II Trench construction, and provides superiorperformance in demanding switching applications, offering both lowon state voltage and minimal switching loss. The IGBT is well suitedfor UPS and solar applications. Incorporated into the device is a softand fa
2.1. Size:185K onsemi
ngtb15n120flwg.pdf
NGTB15N120FLWGIGBTThis Insulated Gate Bipolar Transistor (IGBT) features a robust andcost effective Trench construction, and provides superior performancein demanding switching applications, offering both low on statevoltage and minimal switching loss. The IGBT is well suited for UPSand solar applications. Incorporated into the device is a soft and fastco-packaged free wheeling di
2.2. Size:185K onsemi
ngtb15n120fl.pdf
NGTB15N120FLWGIGBTThis Insulated Gate Bipolar Transistor (IGBT) features a robust andcost effective Trench construction, and provides superior performancein demanding switching applications, offering both low on statevoltage and minimal switching loss. The IGBT is well suited for UPSand solar applications. Incorporated into the device is a soft and fastco-packaged free wheeling di
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