Справочник IGBT. NGTB15N120FL2WG

 

NGTB15N120FL2WG Даташит. Аналоги. Параметры и характеристики.


   Наименование: NGTB15N120FL2WG
   Тип транзистора: IGBT
   Тип управляющего канала: N
   Pcⓘ - Максимальная рассеиваемая мощность: 147 W
   |Vce|ⓘ - Предельно-допустимое напряжение коллектор-эмиттер: 1200 V
   |Vge|ⓘ - Максимально допустимое напряжение эмиттер-затвор: 20 V
   |Ic|ⓘ - Максимальный постоянный ток коллектора: 15 A @25℃
   |VCEsat|ⓘ - Напряжение насыщения коллектор-эмиттер типовое: 2 V @25℃
   Tjⓘ - Максимальная температура перехода: 175 ℃
   trⓘ - Время нарастания типовое: 104 nS
   Coesⓘ - Выходная емкость, типовая: 88 pF
   Тип корпуса: TO247
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NGTB15N120FL2WG Datasheet (PDF)

 0.1. Size:267K  onsemi
 ngtb15n120fl2wg.pdf pdf_icon

NGTB15N120FL2WG

NGTB15N120FL2WGIGBT - Field Stop IIThis Insulated Gate Bipolar Transistor (IGBT) features a robust andcost effective Field Stop II Trench construction, and provides superiorperformance in demanding switching applications, offering both lowon state voltage and minimal switching loss. The IGBT is well suitedfor UPS and solar applications. Incorporated into the device is a softwww.on

 1.1. Size:233K  onsemi
 ngtb15n120fl2.pdf pdf_icon

NGTB15N120FL2WG

NGTB15N120FL2WGIGBT - Field Stop IIThis Insulated Gate Bipolar Transistor (IGBT) features a robust andcost effective Field Stop II Trench construction, and provides superiorperformance in demanding switching applications, offering both lowon state voltage and minimal switching loss. The IGBT is well suitedfor UPS and solar applications. Incorporated into the device is a softand fa

 2.1. Size:185K  onsemi
 ngtb15n120flwg.pdf pdf_icon

NGTB15N120FL2WG

NGTB15N120FLWGIGBTThis Insulated Gate Bipolar Transistor (IGBT) features a robust andcost effective Trench construction, and provides superior performancein demanding switching applications, offering both low on statevoltage and minimal switching loss. The IGBT is well suited for UPSand solar applications. Incorporated into the device is a soft and fastco-packaged free wheeling di

 2.2. Size:185K  onsemi
 ngtb15n120fl.pdf pdf_icon

NGTB15N120FL2WG

NGTB15N120FLWGIGBTThis Insulated Gate Bipolar Transistor (IGBT) features a robust andcost effective Trench construction, and provides superior performancein demanding switching applications, offering both low on statevoltage and minimal switching loss. The IGBT is well suited for UPSand solar applications. Incorporated into the device is a soft and fastco-packaged free wheeling di

ПОКАЗАТЬ ЕЩЁ

Другие IGBT... STGWT40V60DLF , STGW50HF65SD , STGWT50HF65SD , IHW20N120R5 , IHW20N135R5 , MM60G60B , RJH1CV6DPK , NGTB15N120FL2 , IKW50N60H3 , NGTG15N120FL2 , NGTG15N120FL2WG , NGTB60N60S , NGTB60N60SWG , AP50G60SW , IRGP4263 , MMG50A120B7HN , MMG50H120H6HN .

History: RJH60D5DPK | IXGH32N60AU1 | APT35GN120L2DQ2G | IRGIB7B60KD | TA49016 | MMG100D170B | 70MT060WHTAPBF

 

 
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