NGTB60N60S Todos los transistores

 

NGTB60N60S IGBT Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: NGTB60N60S

Tipo de transistor: IGBT

Polaridad de transistor: N

ESPECIFICACIONES TECNICAS

Pcⓘ - Máxima potencia disipada: 119 W

|Vce|ⓘ - Tensión máxima colector-emisor: 600 V

|Vge|ⓘ - Tensión máxima puerta-emisor: 20 V

|Ic|ⓘ - Colector de Corriente Continua a 25℃: 60 A

Tjⓘ - Temperatura máxima de unión: 150 ℃

CARACTERÍSTICAS ELÉCTRICAS

|VCEsat|ⓘ - Voltaje de saturación colector-emisor, typ: 2 V @25℃

trⓘ - Tiempo de subida, typ: 48 nS

Coesⓘ - Capacitancia de salida, typ: 169 pF

Encapsulados: TO247

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NGTB60N60S datasheet

 ..1. Size:97K  onsemi
 ngtb60n60s.pdf pdf_icon

NGTB60N60S

NGTB60N60SWG IGBT This Insulated Gate Bipolar Transistor (IGBT) features a robust and cost effective Field Stop (FS) Trench construction, and provides superior performance in demanding switching applications, offering both low on state voltage and minimal switching loss. The IGBT is well suited for half bridge resonant applications. Incorporated into the device is a soft and fast co-pack

 0.1. Size:97K  onsemi
 ngtb60n60swg.pdf pdf_icon

NGTB60N60S

NGTB60N60SWG IGBT This Insulated Gate Bipolar Transistor (IGBT) features a robust and cost effective Field Stop (FS) Trench construction, and provides superior performance in demanding switching applications, offering both low on state voltage and minimal switching loss. The IGBT is well suited for half bridge resonant applications. Incorporated into the device is a soft and fast co-pack

Otros transistores... IHW20N120R5 , IHW20N135R5 , MM60G60B , RJH1CV6DPK , NGTB15N120FL2 , NGTB15N120FL2WG , NGTG15N120FL2 , NGTG15N120FL2WG , IKW50N60H3 , NGTB60N60SWG , AP50G60SW , IRGP4263 , MMG50A120B7HN , MMG50H120H6HN , MMG50HB120H6HN , NGTB35N60FL2WG , NGTB35N65FL2 .

History: SGF80N60UF | SKM145GAX123D | SKM145GAR123D | VS-GB400AH120U | AP50G60SW | VS-GB75LA60UF | VS-GB50LP120N

 

 

 

 

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