NGTB60N60S Specs and Replacement
Type Designator: NGTB60N60S
Type: IGBT
Type of IGBT Channel: N
Absolute Maximum Ratings
Pc ⓘ - Maximum Power Dissipation: 119 W
|Vce|ⓘ - Maximum Collector-Emitter Voltage: 600 V
|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
|Ic| ⓘ - Maximum Collector Current: 60 A @25℃
Tj ⓘ - Maximum Junction Temperature: 150 ℃
Electrical Characteristics
|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 2 V @25℃
tr ⓘ - Rise Time, typ: 48 nS
Coesⓘ - Output Capacitance, typ: 169 pF
Package: TO247
NGTB60N60S Substitution - IGBT ⓘ Cross-Reference Search
NGTB60N60S datasheet
ngtb60n60s.pdf
NGTB60N60SWG IGBT This Insulated Gate Bipolar Transistor (IGBT) features a robust and cost effective Field Stop (FS) Trench construction, and provides superior performance in demanding switching applications, offering both low on state voltage and minimal switching loss. The IGBT is well suited for half bridge resonant applications. Incorporated into the device is a soft and fast co-pack... See More ⇒
ngtb60n60swg.pdf
NGTB60N60SWG IGBT This Insulated Gate Bipolar Transistor (IGBT) features a robust and cost effective Field Stop (FS) Trench construction, and provides superior performance in demanding switching applications, offering both low on state voltage and minimal switching loss. The IGBT is well suited for half bridge resonant applications. Incorporated into the device is a soft and fast co-pack... See More ⇒
Specs: IHW20N120R5 , IHW20N135R5 , MM60G60B , RJH1CV6DPK , NGTB15N120FL2 , NGTB15N120FL2WG , NGTG15N120FL2 , NGTG15N120FL2WG , IKW50N60H3 , NGTB60N60SWG , AP50G60SW , IRGP4263 , MMG50A120B7HN , MMG50H120H6HN , MMG50HB120H6HN , NGTB35N60FL2WG , NGTB35N65FL2 .
History: SKM145GB063DN
Keywords - NGTB60N60S transistor spec
NGTB60N60S cross reference
NGTB60N60S equivalent finder
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History: SKM145GB063DN
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