NGTB60N60S Datasheet and Replacement
Type Designator: NGTB60N60S
Type: IGBT + Anti-Parallel Diode
Marking Code: 60N60S
Type of IGBT Channel: N
Pc ⓘ - Maximum Power Dissipation: 119 W
|Vce|ⓘ - Maximum Collector-Emitter Voltage: 600 V
|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
|Ic| ⓘ - Maximum Collector Current: 60 A @25℃
|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 2 V @25℃
|VGEth|ⓘ - Maximum G-E Threshold Voltag: 6.5 V
Tj ⓘ - Maximum Junction Temperature: 150 ℃
tr ⓘ - Rise Time, typ: 48 nS
Coesⓘ - Output Capacitance, typ: 169 pF
Qg ⓘ - Total Gate Charge, typ: 173 nC
Package: TO247
NGTB60N60S substitution
NGTB60N60S Datasheet (PDF)
ngtb60n60s.pdf
NGTB60N60SWGIGBTThis Insulated Gate Bipolar Transistor (IGBT) features a robust andcost effective Field Stop (FS) Trench construction, and providessuperior performance in demanding switching applications, offeringboth low on state voltage and minimal switching loss. The IGBT iswell suited for half bridge resonant applications. Incorporated into thedevice is a soft and fast co-pack
ngtb60n60swg.pdf
NGTB60N60SWGIGBTThis Insulated Gate Bipolar Transistor (IGBT) features a robust andcost effective Field Stop (FS) Trench construction, and providessuperior performance in demanding switching applications, offeringboth low on state voltage and minimal switching loss. The IGBT iswell suited for half bridge resonant applications. Incorporated into thedevice is a soft and fast co-pack
Datasheet: AP05G120SW-HF , TSG10N120CN , AP05G120NSW-HF , AP20GT60SW , AP20GT60W , CI15T60 , MMIX4B12N300 , NGD8205A , CRG60T60AN3H , IXYP8N90C3D1 , APT20GN60BG , APT20GN60KG , APT20GN60SG , AOK20B60D1 , F3L30R06W1E3_B11 , WGW15G120N , WGW15G120W .
History: APT40GF120JRD | HGT1S20N60B3S
Keywords - NGTB60N60S transistor datasheet
NGTB60N60S cross reference
NGTB60N60S equivalent finder
NGTB60N60S lookup
NGTB60N60S substitution
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History: APT40GF120JRD | HGT1S20N60B3S
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