All IGBT. NGTB60N60S Datasheet

 

NGTB60N60S Datasheet and Replacement


   Type Designator: NGTB60N60S
   Type: IGBT
   Type of IGBT Channel: N
   Pc ⓘ - Maximum Power Dissipation: 119 W
   |Vce|ⓘ - Maximum Collector-Emitter Voltage: 600 V
   |Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
   |Ic| ⓘ - Maximum Collector Current: 60 A @25℃
   |VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 2 V @25℃
   Tj ⓘ - Maximum Junction Temperature: 150 ℃
   tr ⓘ - Rise Time, typ: 48 nS
   Coesⓘ - Output Capacitance, typ: 169 pF
   Package: TO247
 

 NGTB60N60S substitution

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NGTB60N60S Datasheet (PDF)

 ..1. Size:97K  onsemi
 ngtb60n60s.pdf pdf_icon

NGTB60N60S

NGTB60N60SWGIGBTThis Insulated Gate Bipolar Transistor (IGBT) features a robust andcost effective Field Stop (FS) Trench construction, and providessuperior performance in demanding switching applications, offeringboth low on state voltage and minimal switching loss. The IGBT iswell suited for half bridge resonant applications. Incorporated into thedevice is a soft and fast co-pack

 0.1. Size:97K  onsemi
 ngtb60n60swg.pdf pdf_icon

NGTB60N60S

NGTB60N60SWGIGBTThis Insulated Gate Bipolar Transistor (IGBT) features a robust andcost effective Field Stop (FS) Trench construction, and providessuperior performance in demanding switching applications, offeringboth low on state voltage and minimal switching loss. The IGBT iswell suited for half bridge resonant applications. Incorporated into thedevice is a soft and fast co-pack

Datasheet: IHW20N120R5 , IHW20N135R5 , MM60G60B , RJH1CV6DPK , NGTB15N120FL2 , NGTB15N120FL2WG , NGTG15N120FL2 , NGTG15N120FL2WG , CRG60T60AK3HD , NGTB60N60SWG , AP50G60SW , IRGP4263 , MMG50A120B7HN , MMG50H120H6HN , MMG50HB120H6HN , NGTB35N60FL2WG , NGTB35N65FL2 .

History: IRG4IBC30W

Keywords - NGTB60N60S transistor datasheet

 NGTB60N60S cross reference
 NGTB60N60S equivalent finder
 NGTB60N60S lookup
 NGTB60N60S substitution
 NGTB60N60S replacement

 

 
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