AP50G60SW Todos los transistores

AP50G60SW RoHS-compliant Product Advanced Power N-CHANNEL INSULATED GATE Electronics Corp. BIPOLAR TRANSISTOR Features VCES 600V C High Speed Switching IC 45A Low Saturation Voltage VCE(sat),Typ.=2.6V@IC=33A C G Built-in Fast Recovery Diode C TO-3P G E E Absolute Maximum Ratings Symbol Parameter Rating Units VCES Collector-Emitter Voltage 600 V VGE Gate-Emitter Vo

AP50G60SW-HF Halogen-Free Product Advanced Power N-CHANNEL INSULATED GATE Electronics Corp. BIPOLAR TRANSISTOR Features VCES 600V C High Speed Switching IC 45A Low Saturation Voltage VCE(sat),Typ.=2.6V@IC=33A C G Built-in Fast Recovery Diode C TO-3P G RoHS Compliant & Halogen-Free E E Absolute Maximum Ratings Symbol Parameter Rating Units VCES Collector-Emitte

AP50G60W-HF Halogen-Free Product Advanced Power N-CHANNEL INSULATED GATE Electronics Corp. BIPOLAR TRANSISTOR Features C High Speed Switching VCES 600V Low Saturation Voltage IC 40A VCE(sat),Typ.=2.5V@IC=40A RoHS Compliant & Halogen-Free G C C TO-3P G E E Absolute Maximum Ratings Symbol Parameter Rating Units VCES Collector-Emitter Voltage 600 V VGE Gate-Emitter

AP50GT60SW-HF Halogen-Free Product Advanced Power N-CHANNEL INSULATED GATE Electronics Corp. BIPOLAR TRANSISTOR Features C VCES 600V High Speed Switching IC 45A Low Saturation Voltage VCE(sat),Typ.=1.85V@IC=45A C G C TO-3P Built-in Fast Recovery Diode E G RoHS Compliant & Halogen-Free E Absolute Maximum Ratings Symbol Parameter Rating Units VCES Collector-Emit

AP50G03GD 30V N+P-Channel Enhancement Mode MOSFET Description The AP50G03GD uses advanced trench technology to provide excellent R , low gate charge and DS(ON) operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = 30V I =52A DS D R