AP50G60SW - IGBT. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: AP50G60SW
Tipo de transistor: IGBT
Polaridad de transistor: N
ESPECIFICACIONES TECNICAS
Pcⓘ - Máxima potencia disipada: 300 W
|Vce|ⓘ - Tensión máxima colector-emisor: 600 V
|Vge|ⓘ - Tensión máxima puerta-emisor: 30 V
|Ic|ⓘ - Colector de Corriente Continua a 25℃: 75 A
|VCEsat|ⓘ - Voltaje de saturación colector-emisor, typ: 3 V @25℃
Tjⓘ - Temperatura máxima de unión: 150 ℃
trⓘ - Tiempo de subida, typ: 22 nS
Coesⓘ - Capacitancia de salida, typ: 235 pF
Paquete / Cubierta: TO247
Búsqueda de reemplazo de AP50G60SW - IGBT
AP50G60SW Datasheet (PDF)
ap50g60sw.pdf
AP50G60SWRoHS-compliant ProductAdvanced Power N-CHANNEL INSULATED GATEElectronics Corp. BIPOLAR TRANSISTORFeaturesVCES 600VC High Speed Switching IC 45A Low Saturation VoltageVCE(sat),Typ.=2.6V@IC=33A CG Built-in Fast Recovery DiodeC TO-3PGEEAbsolute Maximum RatingsSymbol Parameter Rating UnitsVCES Collector-Emitter Voltage 600 VVGE Gate-Emitter Vo
ap50g60sw-hf.pdf
AP50G60SW-HFHalogen-Free ProductAdvanced Power N-CHANNEL INSULATED GATEElectronics Corp. BIPOLAR TRANSISTORFeaturesVCES 600VC High Speed Switching IC 45A Low Saturation VoltageVCE(sat),Typ.=2.6V@IC=33A CG Built-in Fast Recovery DiodeC TO-3PG RoHS Compliant & Halogen-FreeEEAbsolute Maximum RatingsSymbol Parameter Rating UnitsVCES Collector-Emitte
ap50g60w-hf.pdf
AP50G60W-HFHalogen-Free ProductAdvanced Power N-CHANNEL INSULATED GATEElectronics Corp. BIPOLAR TRANSISTORFeaturesC High Speed Switching VCES 600V Low Saturation Voltage IC 40AVCE(sat),Typ.=2.5V@IC=40A RoHS Compliant & Halogen-FreeGCCTO-3PGEEAbsolute Maximum RatingsSymbol Parameter Rating UnitsVCES Collector-Emitter Voltage 600 VVGE Gate-Emitter
ap50gt60sw-hf.pdf
AP50GT60SW-HFHalogen-Free ProductAdvanced Power N-CHANNEL INSULATED GATEElectronics Corp. BIPOLAR TRANSISTORFeaturesCVCES 600V High Speed Switching IC 45A Low Saturation VoltageVCE(sat),Typ.=1.85V@IC=45A CGC TO-3P Built-in Fast Recovery DiodeEG RoHS Compliant & Halogen-FreeEAbsolute Maximum RatingsSymbol Parameter Rating UnitsVCES Collector-Emit
Otros transistores... APT20GN60BG , APT20GN60KG , APT20GN60SG , AOK20B60D1 , F3L30R06W1E3_B11 , WGW15G120N , WGW15G120W , IRG4MC50U , CRG60T60AK3HD , AOB10B60D , AOK10B60D , AOT10B60D , NGB8207AB , NGB8207B , AOB15B60D , IRGSL8B60K , AOK15B60D .
Liste
Recientemente añadidas las descripciónes de los transistores
IGBT: AOTS40B65H1 | AOTF8B65MQ1 | AOTF5B65M2 | AOTF5B65M1 | AOTF20B65M2 | AOTF20B65M1 | AOTF20B65LN2 | AOTF15B65MQ1 | AOTF15B65M3 | AOTF15B65M2 | AOTF15B60D2