AP50G60SW IGBT. Datasheet pdf. Equivalent
Type Designator: AP50G60SW
Type of IGBT Channel: N-Channel
Maximum Power Dissipation (Pc), W: 300
Maximum Collector-Emitter Voltage |Vce|, V: 600
Collector-Emitter saturation Voltage |Vcesat|, V: 3
Maximum Gate-Emitter Voltage |Veg|, V: 30
Maximum Collector Current |Ic|, A: 75
Maximum Junction Temperature (Tj), °C: 150
Rise Time, nS: 22
Maximum Collector Capacity (Cc), pF: 235
Package: TO247
AP50G60SW Transistor Equivalent Substitute - IGBT Cross-Reference Search
AP50G60SW PDF doc:
1.1. ap50g60sw.pdf 
Size:95K _igbt_a
AP50G60SW RoHS-compliant Product Advanced Power N-CHANNEL INSULATED GATE Electronics Corp. BIPOLAR TRANSISTOR Features VCES 600V C ▼ High Speed Switching IC 45A ▼ Low Saturation Voltage VCE(sat),Typ.=2.6V@IC=33A C G ▼ Built-in Fast Recovery Diode C TO-3P G E E Absolute Maximum Ratings Symbol Parameter Rating Units VCES Collector-Emitter Voltage 600 V VGE Gate-Emitter Vo
1.2. ap50g60sw-hf.pdf Size:96K _igbt_a
AP50G60SW-HF Halogen-Free Product Advanced Power N-CHANNEL INSULATED GATE Electronics Corp. BIPOLAR TRANSISTOR Features VCES 600V C ▼ High Speed Switching IC 45A ▼ Low Saturation Voltage VCE(sat),Typ.=2.6V@IC=33A C G ▼ Built-in Fast Recovery Diode C TO-3P G ▼ RoHS Compliant & Halogen-Free E E Absolute Maximum Ratings Symbol Parameter Rating Units VCES Collector-Emitte
1.3. ap50g60sw-hf.pdf Size:90K _a-power
AP50G60SW-HF Halogen-Free Product Advanced Power N-CHANNEL INSULATED GATE Electronics Corp. BIPOLAR TRANSISTOR Features VCES 600V C Ў High Speed Switching IC 45A Ў Low Saturation Voltage VCE(sat),Typ.=2.6V@IC=33A C G Ў Built-in Fast Recovery Diode C TO-3P G Ў RoHS Compliant & Halogen-Free E E Absolute Maximum Ratings Symbol Parameter Rating Units VCES Collector-Emitter Volta
Datasheet: MM60G60B , RJH1CV6DPK , NGTB15N120FL2 , NGTB15N120FL2WG , NGTG15N120FL2 , NGTG15N120FL2WG , NGTB60N60S , NGTB60N60SWG , GT60M301 , IRGP4263 , MMG50A120B7HN , MMG50H120H6HN , MMG50HB120H6HN , NGTB35N60FL2WG , NGTB35N65FL2 , NGTB35N65FL2WG , NGTB40N65IHL2 .
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