IRGP4263 - IGBT. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: IRGP4263
Tipo de transistor: IGBT
Polaridad de transistor: N
ESPECIFICACIONES TECNICAS
Pcⓘ - Máxima potencia disipada: 300 W
|Vce|ⓘ - Tensión máxima colector-emisor: 650 V
|Vge|ⓘ - Tensión máxima puerta-emisor: 20 V
|Ic|ⓘ - Colector de Corriente Continua a 25℃: 90 A
|VCEsat|ⓘ - Voltaje de saturación colector-emisor, typ: 1.7 V @25℃
Tjⓘ - Temperatura máxima de unión: 175 ℃
trⓘ - Tiempo de subida, typ: 60 nS
Coesⓘ - Capacitancia de salida, typ: 150 pF
Paquete / Cubierta: TO247
Búsqueda de reemplazo de IRGP4263 - IGBT
IRGP4263 Datasheet (PDF)
irgp4263.pdf
IRGP4263PbF IRGP4263-EPbF Insulated Gate Bipolar Transistor CVCES = 650V IC = 60A, TC =100C E E GtSC 5.5s, TJ(max) = 175C C C G G VCE(ON) typ. = 1.7V @ IC = 48A EIRGP4263PbF IRGP4263-EPbF n-channelTO247AC TO-247AD Applications G C E Industrial Motor Drive Gate Collector Emitter Inverters UPS Welding Features Benefi
irgp4262d.pdf
IRGP4262DPbF IRGP4262D-EPbF Insulated Gate Bipolar Transistor with Ultrafast Soft Recovery Diode VCES = 650V G C G IC = 40A, TC =100C E tSC 5.5s, TJ(max) = 175C E GC C G G EVCE(ON) typ. = 1.7V @ IC = 24A IRGP4262DPbF IRGP4262D-EPbF n-channelTO-247AC TO-247AD Applications G C E Industrial Motor Drive Gate Collector Emitter UPS
irgp4266d.pdf
IRGP4266DPbF IRGP4266D-EPbF Insulated Gate Bipolar Transistor with Ultrafast Soft Recovery Diode VCES = 650V C IC = 90A, TC =100C tSC 5.5s, TJ(max) = 175C GE E C G C G VCE(ON) typ. = 1.7V @ IC = 75A EIRGP4266DPbFIRGP4266DEPbFn-channelApplications TO247ACTO247AD Industrial Motor Drive G C E UPS Gate Collector E
irgp4266.pdf
IRGP4266PbF IRGP4266-EPbF Insulated Gate Bipolar Transistor VCES = 650V CIC = 90A, TC =100C tSC 5.5s, TJ(max) = 175C GE E C VCE(ON) typ. = 1.7V @ IC = 75A G C G EIRGP4266PbF IRGP4266-EPbF n-channelTO-247AC TO-247AD Applications Industrial Motor Drive G C E Inverters Gate Collector Emitter UPS Welding Features Ben
Otros transistores... RJH1CV6DPK , NGTB15N120FL2 , NGTB15N120FL2WG , NGTG15N120FL2 , NGTG15N120FL2WG , NGTB60N60S , NGTB60N60SWG , AP50G60SW , TGAN20N135FD , MMG50A120B7HN , MMG50H120H6HN , MMG50HB120H6HN , NGTB35N60FL2WG , NGTB35N65FL2 , NGTB35N65FL2WG , NGTB40N65IHL2 , NGTB40N65IHL2WG .
Liste
Recientemente añadidas las descripciónes de los transistores
IGBT: AOTS40B65H1 | AOTF8B65MQ1 | AOTF5B65M2 | AOTF5B65M1 | AOTF20B65M2 | AOTF20B65M1 | AOTF20B65LN2 | AOTF15B65MQ1 | AOTF15B65M3 | AOTF15B65M2 | AOTF15B60D2