NGTB45N60S1WG Todos los transistores

 

NGTB45N60S1WG IGBT Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: NGTB45N60S1WG

Tipo de transistor: IGBT

Polaridad de transistor: N

ESPECIFICACIONES TECNICAS

Pcⓘ - Máxima potencia disipada: 150 W

|Vce|ⓘ - Tensión máxima colector-emisor: 600 V

|Vge|ⓘ - Tensión máxima puerta-emisor: 20 V

|Ic|ⓘ - Colector de Corriente Continua a 25℃: 45 A

Tjⓘ - Temperatura máxima de unión: 175 ℃

CARACTERÍSTICAS ELÉCTRICAS

|VCEsat|ⓘ - Voltaje de saturación colector-emisor, typ: 2 V @25℃

trⓘ - Tiempo de subida, typ: 33 nS

Coesⓘ - Capacitancia de salida, typ: 149 pF

Encapsulados: TO247

 Búsqueda de reemplazo de NGTB45N60S1WG IGBT

- Selección ⓘ de transistores por parámetros

 

NGTB45N60S1WG datasheet

 ..1. Size:80K  onsemi
 ngtb45n60s1wg.pdf pdf_icon

NGTB45N60S1WG

NGTB45N60S1WG IGBT - Inverter Welding This Insulated Gate Bipolar Transistor (IGBT) features a robust and cost effective Trench construction, and provides superior performance in demanding switching applications, offering both low on state voltage and minimal switching loss. The IGBT is well suited for welding applications. Incorporated into the device is a soft and fast www.onsemi.com

 3.1. Size:80K  onsemi
 ngtb45n60s1.pdf pdf_icon

NGTB45N60S1WG

NGTB45N60S1WG IGBT - Inverter Welding This Insulated Gate Bipolar Transistor (IGBT) features a robust and cost effective Trench construction, and provides superior performance in demanding switching applications, offering both low on state voltage and minimal switching loss. The IGBT is well suited for welding applications. Incorporated into the device is a soft and fast www.onsemi.com

 4.1. Size:83K  onsemi
 ngtb45n60s2wg.pdf pdf_icon

NGTB45N60S1WG

NGTB45N60S2WG IGBT - Inverter Welding This Insulated Gate Bipolar Transistor (IGBT) features a robust and cost effective Trench construction, and provides superior performance in demanding switching applications, offering both low on state voltage and minimal switching loss. The IGBT is well suited for welding applications. Incorporated into the device is a soft and fast www.onsemi.com

 4.2. Size:139K  onsemi
 ngtb45n60s.pdf pdf_icon

NGTB45N60S1WG

NGTB45N60SWG IGBT This Insulated Gate Bipolar Transistor (IGBT) features a robust and cost effective Field Stop (FS) Trench construction, and provides superior performance in demanding switching applications, offering both low on state voltage and minimal switching loss. The IGBT is well suited for half bridge resonant applications. Incorporated into the device is a soft and fast co-pack

MOSTRAR MÁS

Otros transistores... MMG50H120H6HN , MMG50HB120H6HN , NGTB35N60FL2WG , NGTB35N65FL2 , NGTB35N65FL2WG , NGTB40N65IHL2 , NGTB40N65IHL2WG , NGTB45N60S1 , IRG4PC50W , NGTB45N60S2 , NGTB45N60S2WG , NGTG35N65FL2 , NGTG35N65FL2WG , RJH60D7BDPQ-E0 , RJH60D7DPQ-E0 , IGW50N65F5 , IGW50N65H5 .

History: SGF30N60RUF | TGH60N65F2DS | VS-GB200TH120N | RJP5001APP-00 | TGH40N60F2D | VS-ETL015Y120H | SKM145GAL123D

 

 

 

 

↑ Back to Top
.