All IGBT. NGTB45N60S1WG Datasheet

 

NGTB45N60S1WG Datasheet and Replacement


   Type Designator: NGTB45N60S1WG
   Type: IGBT
   Type of IGBT Channel: N
   Pcⓘ - Maximum Power Dissipation: 150 W
   |Vce|ⓘ - Maximum Collector-Emitter Voltage: 600 V
   |Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
   |Ic|ⓘ - Maximum Collector Current: 45 A @25℃
   |VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 2 V @25℃
   Tjⓘ - Maximum Junction Temperature: 175 ℃
   trⓘ - Rise Time, typ: 33 nS
   Coesⓘ - Output Capacitance, typ: 149 pF
   Package: TO247
      - IGBT Cross-Reference

 

NGTB45N60S1WG Datasheet (PDF)

 ..1. Size:80K  onsemi
 ngtb45n60s1wg.pdf pdf_icon

NGTB45N60S1WG

NGTB45N60S1WGIGBT - Inverter WeldingThis Insulated Gate Bipolar Transistor (IGBT) features a robust andcost effective Trench construction, and provides superior performancein demanding switching applications, offering both low on statevoltage and minimal switching loss. The IGBT is well suited forwelding applications. Incorporated into the device is a soft and fastwww.onsemi.com

 3.1. Size:80K  onsemi
 ngtb45n60s1.pdf pdf_icon

NGTB45N60S1WG

NGTB45N60S1WGIGBT - Inverter WeldingThis Insulated Gate Bipolar Transistor (IGBT) features a robust andcost effective Trench construction, and provides superior performancein demanding switching applications, offering both low on statevoltage and minimal switching loss. The IGBT is well suited forwelding applications. Incorporated into the device is a soft and fastwww.onsemi.com

 4.1. Size:83K  onsemi
 ngtb45n60s2wg.pdf pdf_icon

NGTB45N60S1WG

NGTB45N60S2WGIGBT - Inverter WeldingThis Insulated Gate Bipolar Transistor (IGBT) features a robust andcost effective Trench construction, and provides superior performancein demanding switching applications, offering both low on statevoltage and minimal switching loss. The IGBT is well suited forwelding applications. Incorporated into the device is a soft and fastwww.onsemi.com

 4.2. Size:139K  onsemi
 ngtb45n60s.pdf pdf_icon

NGTB45N60S1WG

NGTB45N60SWGIGBTThis Insulated Gate Bipolar Transistor (IGBT) features a robust andcost effective Field Stop (FS) Trench construction, and providessuperior performance in demanding switching applications, offeringboth low on state voltage and minimal switching loss. The IGBT iswell suited for half bridge resonant applications. Incorporated into thedevice is a soft and fast co-pack

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Datasheet: MMG50H120H6HN , MMG50HB120H6HN , NGTB35N60FL2WG , NGTB35N65FL2 , NGTB35N65FL2WG , NGTB40N65IHL2 , NGTB40N65IHL2WG , NGTB45N60S1 , GT30F132 , NGTB45N60S2 , NGTB45N60S2WG , NGTG35N65FL2 , NGTG35N65FL2WG , RJH60D7BDPQ-E0 , RJH60D7DPQ-E0 , IGW50N65F5 , IGW50N65H5 .

History: AOTF15B65MQ1 | 2MBI1000VXB-170E-50

Keywords - NGTB45N60S1WG transistor datasheet

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