NGTG35N65FL2 IGBT Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: NGTG35N65FL2
Tipo de transistor: IGBT
Polaridad de transistor: N
ESPECIFICACIONES TECNICAS
Pcⓘ - Máxima potencia disipada: 150 W
|Vce|ⓘ - Tensión máxima colector-emisor: 650 V
|Vge|ⓘ - Tensión máxima puerta-emisor: 20 V
|Ic|ⓘ - Colector de Corriente Continua a 25℃: 35 A
Tjⓘ - Temperatura máxima de unión: 175 ℃
CARACTERÍSTICAS ELÉCTRICAS
|VCEsat|ⓘ - Voltaje de saturación colector-emisor, typ: 1.7 V @25℃
trⓘ - Tiempo de subida, typ: 40 nS
Coesⓘ - Capacitancia de salida, typ: 149 pF
Encapsulados: TO247
Búsqueda de reemplazo de NGTG35N65FL2 IGBT
- Selección ⓘ de transistores por parámetros
NGTG35N65FL2 datasheet
ngtg35n65fl2.pdf
NGTG35N65FL2WG IGBT - Field Stop II This Insulated Gate Bipolar Transistor (IGBT) features a robust and cost effective Field Stop II Trench construction, and provides superior performance in demanding switching applications, offering both low on state voltage and minimal switching loss. The IGBT is well suited for UPS and solar applications. http //onsemi.com Features Extremely Eff
ngtg35n65fl2wg.pdf
NGTG35N65FL2WG IGBT - Field Stop II This Insulated Gate Bipolar Transistor (IGBT) features a robust and cost effective Field Stop II Trench construction, and provides superior performance in demanding switching applications, offering both low on state voltage and minimal switching loss. The IGBT is well suited for UPS and solar applications. www.onsemi.com Features Extremely Effici
ngtg30n60flwg.pdf
NGTG30N60FLWG IGBT This Insulated Gate Bipolar Transistor (IGBT) features a robust and cost effective Trench construction, and provides superior performance in demanding switching applications, offering both low on state voltage and minimal switching loss. http //onsemi.com Features Low Saturation Voltage using Trench with Field Stop Technology Low Switching Loss Reduces System
Otros transistores... NGTB35N65FL2 , NGTB35N65FL2WG , NGTB40N65IHL2 , NGTB40N65IHL2WG , NGTB45N60S1 , NGTB45N60S1WG , NGTB45N60S2 , NGTB45N60S2WG , IRG4PC50UD , NGTG35N65FL2WG , RJH60D7BDPQ-E0 , RJH60D7DPQ-E0 , IGW50N65F5 , IGW50N65H5 , IKW50N65F5 , IKW50N65H5 , IRG8P40N120KD .
History: DM2G50SH12A | NCE80TD60BT | IXXH100N60C3 | SL40T65FL | STGB35N35LZ | IXSR35N120BD1 | STGF15M65DF2
History: DM2G50SH12A | NCE80TD60BT | IXXH100N60C3 | SL40T65FL | STGB35N35LZ | IXSR35N120BD1 | STGF15M65DF2
🌐 : EN ES РУ
Liste
Recientemente añadidas las descripciónes de los transistores
IGBT: JJT40N120SE | JJT40N120HE | JJT30N65UE | JJT30N65SY | JJT30N65SS | JJT30N65SE | JJT40N65UH | JJT40N65UE | JJT40N65LE | JJT40N65HE | JJT40N135UE
Popular searches
2sc3281 datasheet | 2sa1106 | 2sb56 | 2sc1451 datasheet | 2sc373 | a1023 datasheet | 2sc1080 | 2sb618




