All IGBT. NGTG35N65FL2 Datasheet

 

NGTG35N65FL2 IGBT. Datasheet pdf. Equivalent


   Type Designator: NGTG35N65FL2
   Type: IGBT
   Type of IGBT Channel: N
   Pcⓘ - Maximum Power Dissipation: 150 W
   |Vce|ⓘ - Maximum Collector-Emitter Voltage: 650 V
   |Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
   |Ic|ⓘ - Maximum Collector Current: 35 A @25℃
   |VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.7 V @25℃
   Tjⓘ - Maximum Junction Temperature: 175 ℃
   trⓘ - Rise Time, typ: 40 nS
   Coesⓘ - Output Capacitance, typ: 149 pF
   Package: TO247

 NGTG35N65FL2 Transistor Equivalent Substitute - IGBT Cross-Reference Search

 

NGTG35N65FL2 Datasheet (PDF)

 ..1. Size:84K  onsemi
 ngtg35n65fl2.pdf

NGTG35N65FL2 NGTG35N65FL2

NGTG35N65FL2WGIGBT - Field Stop IIThis Insulated Gate Bipolar Transistor (IGBT) features a robust andcost effective Field Stop II Trench construction, and provides superiorperformance in demanding switching applications, offering both lowon state voltage and minimal switching loss. The IGBT is well suitedfor UPS and solar applications.http://onsemi.comFeatures Extremely Eff

 0.1. Size:82K  onsemi
 ngtg35n65fl2wg.pdf

NGTG35N65FL2 NGTG35N65FL2

NGTG35N65FL2WGIGBT - Field Stop IIThis Insulated Gate Bipolar Transistor (IGBT) features a robust andcost effective Field Stop II Trench construction, and provides superiorperformance in demanding switching applications, offering both lowon state voltage and minimal switching loss. The IGBT is well suitedfor UPS and solar applications.www.onsemi.comFeatures Extremely Effici

 9.1. Size:173K  onsemi
 ngtg30n60flwg.pdf

NGTG35N65FL2 NGTG35N65FL2

NGTG30N60FLWGIGBTThis Insulated Gate Bipolar Transistor (IGBT) features a robust andcost effective Trench construction, and provides superior performancein demanding switching applications, offering both low on statevoltage and minimal switching loss.http://onsemi.comFeatures Low Saturation Voltage using Trench with Field Stop Technology Low Switching Loss Reduces System

 9.2. Size:169K  onsemi
 ngtg30n60fwg.pdf

NGTG35N65FL2 NGTG35N65FL2

NGTG30N60FWGIGBTThis Insulated Gate Bipolar Transistor (IGBT) features a robust andcost effective Trench construction, and provides superior performancein demanding switching applications, offering both low on statevoltage and minimal switching loss.http://onsemi.comFeatures Optimized for Very Low VCEsat Low Switching Loss Reduces System Power Dissipation30 A, 600 V

Datasheet: NGTB35N65FL2 , NGTB35N65FL2WG , NGTB40N65IHL2 , NGTB40N65IHL2WG , NGTB45N60S1 , NGTB45N60S1WG , NGTB45N60S2 , NGTB45N60S2WG , XNF15N60T , NGTG35N65FL2WG , RJH60D7BDPQ-E0 , RJH60D7DPQ-E0 , IGW50N65F5 , IGW50N65H5 , IKW50N65F5 , IKW50N65H5 , IRG8P40N120KD .

 

 
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