IKW50N65H5 - IGBT. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: IKW50N65H5
Tipo de transistor: IGBT + Diode
Código de marcado: K50EH5
Polaridad de transistor: N
ESPECIFICACIONES TECNICAS
Pcⓘ - Máxima potencia disipada: 305 W
|Vce|ⓘ - Tensión máxima colector-emisor: 650 V
|Vge|ⓘ - Tensión máxima puerta-emisor: 20 V
|Ic|ⓘ - Colector de Corriente Continua a 25℃: 80 A
|VCEsat|ⓘ - Voltaje de saturación colector-emisor, typ: 1.65 V @25℃
|VGEth|ⓘ - Tensión máxima de puerta-umbral: 4.8 V
Tjⓘ - Temperatura máxima de unión: 175 ℃
trⓘ - Tiempo de subida, typ: 15 nS
Coesⓘ - Capacitancia de salida, typ: 65 pF
Qgⓘ - Carga total de la puerta, typ: 120 nC
Paquete / Cubierta: TO247
IKW50N65H5 Datasheet (PDF)
ikw50n65h5.pdf

IGBTHigh speed 5 IGBT in TRENCHSTOPTM 5 technology copacked with RAPID 1fast and soft antiparallel diodeIKW50N65H5650V DuoPack IGBT and DiodeHigh speed switching series fifth generationData sheetIndustrial Power ControlIKW50N65H5High speed switching series fifth generationHigh speed 5 IGBT in TRENCHSTOPTM 5 technology copacked with RAPID 1fast and soft antiparallel diode
ikw50n65h5a.pdf

IGBTHigh speed 5 FAST IGBT in TRENCHSTOPTM 5 technology copacked with RAPID 1fast and soft antiparallel diodeIKW50N65H5A650V DuoPack IGBT and diodeHigh speed switching series fifth generationData sheetIndustrial Power ControlIKW50N65H5AHigh speed switching series fifth generationHigh speed 5 FAST IGBT in TRENCHSTOPTM 5 technology copacked withRAPID 1 fast and soft antipar
ikw50n65wr5.pdf

Reverse Conducting SeriesReverse conducting IGBT with monolithic body diodeIKW50N65WR5Data sheetInductrial Power ControlIKW50N65WR5Reverse Conducting SeriesReverse conducting IGBT with monolithic body diodeCFeatures: Powerful monolithic diode optimized for ZCS applications TRENCHSTOPTM 5 technology applications offers:- high ruggedness, temperature stable behavior
aikw50n65dh5.pdf

AIKW50N65DH5High speed switching series fifth generationHigh speed fast IGBT in TRENCHSTOPTM 5 technology copacked withRAPID 1 fast and soft antiparallel diodeCFeatures and Benefits: High speed H5 technology offering: Best-in-Class efficiency in hard switching and resonant topologies Plug and play replacement of previous generation IGBTsG 650V breakdown voltageE
Otros transistores... AP05G120SW-HF , TSG10N120CN , AP05G120NSW-HF , AP20GT60SW , AP20GT60W , CI15T60 , MMIX4B12N300 , NGD8205A , IHW20N135R5 , IXYP8N90C3D1 , APT20GN60BG , APT20GN60KG , APT20GN60SG , AOK20B60D1 , F3L30R06W1E3_B11 , WGW15G120N , WGW15G120W .



Liste
Recientemente añadidas las descripciónes de los transistores
IGBT: G50T65LBBW | G50T65DS | G40N120D | G25T120D | DHG60T65D | DGF30F65M2 | DGE20F65M2 | DGD06F65M2 | DGC75F65M | DGC75F120M2 | DGC60F65M
Popular searches
2sb618 | 2sc1328 | 2sc1845 transistor | a933 transistor datasheet | a1633 transistor | 2sa844 | 2sc1327 | 2sc3855