All IGBT. IKW50N65H5 Datasheet

 

IKW50N65H5 Datasheet and Replacement


   Type Designator: IKW50N65H5
   Type: IGBT
   Type of IGBT Channel: N
   Pcⓘ - Maximum Power Dissipation: 305 W
   |Vce|ⓘ - Maximum Collector-Emitter Voltage: 650 V
   |Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
   |Ic|ⓘ - Maximum Collector Current: 80 A @25℃
   |VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.65 V @25℃
   Tjⓘ - Maximum Junction Temperature: 175 ℃
   trⓘ - Rise Time, typ: 15 nS
   Coesⓘ - Output Capacitance, typ: 65 pF
   Package: TO247
      - IGBT Cross-Reference

 

IKW50N65H5 Datasheet (PDF)

 ..1. Size:2249K  infineon
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IKW50N65H5

IGBTHigh speed 5 IGBT in TRENCHSTOPTM 5 technology copacked with RAPID 1fast and soft antiparallel diodeIKW50N65H5650V DuoPack IGBT and DiodeHigh speed switching series fifth generationData sheetIndustrial Power ControlIKW50N65H5High speed switching series fifth generationHigh speed 5 IGBT in TRENCHSTOPTM 5 technology copacked with RAPID 1fast and soft antiparallel diode

 0.1. Size:2112K  infineon
ikw50n65h5a.pdf pdf_icon

IKW50N65H5

IGBTHigh speed 5 FAST IGBT in TRENCHSTOPTM 5 technology copacked with RAPID 1fast and soft antiparallel diodeIKW50N65H5A650V DuoPack IGBT and diodeHigh speed switching series fifth generationData sheetIndustrial Power ControlIKW50N65H5AHigh speed switching series fifth generationHigh speed 5 FAST IGBT in TRENCHSTOPTM 5 technology copacked withRAPID 1 fast and soft antipar

 6.1. Size:1913K  infineon
ikw50n65wr5.pdf pdf_icon

IKW50N65H5

Reverse Conducting SeriesReverse conducting IGBT with monolithic body diodeIKW50N65WR5Data sheetInductrial Power ControlIKW50N65WR5Reverse Conducting SeriesReverse conducting IGBT with monolithic body diodeCFeatures: Powerful monolithic diode optimized for ZCS applications TRENCHSTOPTM 5 technology applications offers:- high ruggedness, temperature stable behavior

 6.2. Size:1980K  infineon
aikw50n65dh5.pdf pdf_icon

IKW50N65H5

AIKW50N65DH5High speed switching series fifth generationHigh speed fast IGBT in TRENCHSTOPTM 5 technology copacked withRAPID 1 fast and soft antiparallel diodeCFeatures and Benefits: High speed H5 technology offering: Best-in-Class efficiency in hard switching and resonant topologies Plug and play replacement of previous generation IGBTsG 650V breakdown voltageE

Datasheet: NGTB45N60S2WG , NGTG35N65FL2 , NGTG35N65FL2WG , RJH60D7BDPQ-E0 , RJH60D7DPQ-E0 , IGW50N65F5 , IGW50N65H5 , IKW50N65F5 , IKW40T120 , IRG8P40N120KD , IRGP6650D , MMG40A120B6C , IRG7PH42UD1M , IRG7PG42UD , IRG7PH44K10D , MMG50S170B6EN , NGTB40N120FL .

History: SGW13N60UFD | CM200E3U-24F | SIGC03T60E | CRG05T60A44S-G | JT075N120F2MA1E | APTGF50X60BTP3 | 7MBR25SA120-01

Keywords - IKW50N65H5 transistor datasheet

 IKW50N65H5 cross reference
 IKW50N65H5 equivalent finder
 IKW50N65H5 lookup
 IKW50N65H5 substitution
 IKW50N65H5 replacement

 

 
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