IRGP4760D Todos los transistores

 

IRGP4760D - IGBT. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: IRGP4760D

Polaridad de transistor: N-Channel

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pc): 325

Tensión colector-emisor (Vce): 650

Voltaje de saturación colector-emisor (Vce sat): 1.7

Tensión emisor-compuerta (Veg): 20

Corriente del colector DC máxima (Ic): 90

Temperatura operativa máxima (Tj), °C: 175

Tiempo de elevación: 60

Capacitancia de salida (Cc), pF: 235

Empaquetado / Estuche: TO247

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IRGP4760D Datasheet (PDF)

0.1. irgp4760d.pdf Size:939K _international_rectifier

IRGP4760D
IRGP4760D

IRGP4760DPbF IRGP4760D-EPbF Insulated Gate Bipolar Transistor with Ultrafast Soft Recovery Diode VCES = 650V C IC = 60A, TC =100C tSC 5.5s, TJ(max) = 175C G E E C C G G EVCE(ON) typ. = 1.7V @ IC = 48A IRGP4760DPbFIRGP4760DEPbFn-channelTO247ACTO247ADApplications G C E Industrial Motor Drive Gate Collector Emitter

6.1. irgp4760.pdf Size:833K _international_rectifier

IRGP4760D
IRGP4760D

IRGP4760PbF IRGP4760-EPbF Insulated Gate Bipolar Transistor VCES = 650V CIC = 60A, TC =100C tSC 5.5s, TJ(max) = 175C GE E C C G G EVCE(ON) typ. = 1.7V @ IC = 48A IRGP4760PbFIRGP4760EPbFn-channelTO247ACTO247ADApplications G C E Industrial Motor Drive Gate Collector Emitter UPS Solar Inverters Weldin

 8.1. irgp4740d.pdf Size:837K _international_rectifier

IRGP4760D
IRGP4760D

IRGP4740DPbF IRGP4740D-EPbF Insulated Gate Bipolar Transistor with Ultrafast Soft Recovery Diode VCES = 650V C IC = 40A, TC =100C tSC 5.5s, TJ(max) = 175C E E G C C G G VCE(ON) typ. = 1.7V @ IC = 24A EIRGP4740DPbF IRGP4740D-EPbF n-channelTO-247AC TO-247AD Applications Industrial Motor Drive G C E UPS Gate Collector Emitter Sola

8.2. irgp4790d.pdf Size:894K _international_rectifier

IRGP4760D
IRGP4760D

IRGP4790DPbF IRGP4790D-EPbF Insulated Gate Bipolar Transistor with Ultrafast Soft Recovery Diode VCES = 650V C IC = 90A, TC =100C tSC 5.5s, TJ(max) = 175C E E GC C G G VCE(ON) typ. = 1.7V @ IC = 75A EIRGP4790DPbFIRGP4790DEPbFn-channelApplications TO247ACTO247AD Industrial Motor Drive G C E UPS Gate Collector

 8.3. irgp4790.pdf Size:796K _international_rectifier

IRGP4760D
IRGP4760D

IRGP4790PbF IRGP4790-EPbF Insulated Gate Bipolar Transistor VCES = 650V CIC = 90A, TC =100C tSC 5.5s, TJ(max) = 175C E GE C C G G VCE(ON) typ. = 1.7V @ IC = 75A En-channel IRGP4790PbFIRGP4790EPbFApplications TO247ACTO247AD Industrial Motor Drive G C E UPS Gate Collector Emitter Solar Inverters We

8.4. irgp4750d.pdf Size:678K _international_rectifier

IRGP4760D
IRGP4760D

IRGP4750DPbF IRGP4750D-EPbF Insulated Gate Bipolar Transistor with Ultrafast Soft Recovery Diode VCES = 650V C IC = 50A, TC =100C tSC 5.5s, TJ(max) = 175C E E GC C G G VCE(ON) typ. = 1.7V @ IC = 35A EIRGP4750DPbFIRGP4750DEPbFn-channelApplications TO247ACTO247AD Industrial Motor Drive G C E UPS Gate Collector

Otros transistores... APT20GN60BG , APT20GN60KG , APT20GN60SG , AOK20B60D1 , F3L30R06W1E3_B11 , WGW15G120N , WGW15G120W , IRG4MC50U , 1MBH50D-060 , AOB10B60D , AOK10B60D , AOT10B60D , NGB8207AB , NGB8207B , AOB15B60D , IRGSL8B60K , AOK15B60D .

 

 
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