All IGBT. IRGP4760D Datasheet

 

IRGP4760D IGBT. Datasheet pdf. Equivalent

Type Designator: IRGP4760D

Type of IGBT Channel: N-Channel

Maximum Power Dissipation (Pc), W: 325

Maximum Collector-Emitter Voltage |Vce|, V: 650

Collector-Emitter saturation Voltage |Vcesat|, V: 1.7

Maximum Gate-Emitter Voltage |Veg|, V: 20

Maximum Collector Current |Ic|, A: 90

Maximum Junction Temperature (Tj), °C: 175

Rise Time, nS: 60

Maximum Collector Capacity (Cc), pF: 235

Package: TO247

IRGP4760D Transistor Equivalent Substitute - IGBT Cross-Reference Search

 

IRGP4760D Datasheet (PDF)

0.1. irgp4760d.pdf Size:939K _international_rectifier

IRGP4760D
IRGP4760D

IRGP4760DPbF IRGP4760D-EPbF Insulated Gate Bipolar Transistor with Ultrafast Soft Recovery Diode VCES = 650V C IC = 60A, TC =100°C tSC 5.5µs, TJ(max) = 175°C G E E C C G G E VCE(ON) typ. = 1.7V @ IC = 48A IRGP4760DPbF  IRGP4760D‐EPbF  n-channel TO‐247AC  TO‐247AD  Applications G C E • Industrial Motor Drive Gate Collector Emitter •

6.1. irgp4760.pdf Size:833K _international_rectifier

IRGP4760D
IRGP4760D

IRGP4760PbF IRGP4760-EPbF Insulated Gate Bipolar Transistor VCES = 650V C IC = 60A, TC =100°C tSC 5.5µs, TJ(max) = 175°C G E E C C G G E VCE(ON) typ. = 1.7V @ IC = 48A IRGP4760PbF  IRGP4760‐EPbF  n-channel TO‐247AC  TO‐247AD  Applications G C E • Industrial Motor Drive Gate Collector Emitter • UPS • Solar Inverters • Weldin

 8.1. irgp4740d.pdf Size:837K _international_rectifier

IRGP4760D
IRGP4760D

 IRGP4740DPbF IRGP4740D-EPbF Insulated Gate Bipolar Transistor with Ultrafast Soft Recovery Diode VCES = 650V C IC = 40A, TC =100°C tSC ≥ 5.5µs, TJ(max) = 175°C E E G C C G G VCE(ON) typ. = 1.7V @ IC = 24A E IRGP4740DPbF IRGP4740D-EPbF n-channel TO-247AC TO-247AD Applications • Industrial Motor Drive G C E • UPS Gate Collector Emitter • Sola

8.2. irgp4790d.pdf Size:894K _international_rectifier

IRGP4760D
IRGP4760D

IRGP4790DPbF IRGP4790D-EPbF Insulated Gate Bipolar Transistor with Ultrafast Soft Recovery Diode VCES = 650V C IC = 90A, TC =100°C tSC 5.5µs, TJ(max) = 175°C E E G C C G G VCE(ON) typ. = 1.7V @ IC = 75A E IRGP4790DPbF IRGP4790D‐EPbF  n-channel Applications TO‐247AC TO‐247AD   Industrial Motor Drive G C E  UPS Gate Collector

 8.3. irgp4790.pdf Size:796K _international_rectifier

IRGP4760D
IRGP4760D

IRGP4790PbF IRGP4790-EPbF Insulated Gate Bipolar Transistor VCES = 650V C IC = 90A, TC =100°C tSC 5.5µs, TJ(max) = 175°C E G E C C G G VCE(ON) typ. = 1.7V @ IC = 75A E n-channel IRGP4790PbF IRGP4790‐EPbF  Applications TO‐247AC TO‐247AD   Industrial Motor Drive G C E  UPS Gate Collector Emitter  Solar Inverters  We

8.4. irgp4750d.pdf Size:678K _international_rectifier

IRGP4760D
IRGP4760D

IRGP4750DPbF IRGP4750D-EPbF Insulated Gate Bipolar Transistor with Ultrafast Soft Recovery Diode VCES = 650V C IC = 50A, TC =100°C tSC 5.5µs, TJ(max) = 175°C E E G C C G G VCE(ON) typ. = 1.7V @ IC = 35A E IRGP4750DPbF IRGP4750D‐EPbF  n-channel Applications TO‐247AC TO‐247AD   Industrial Motor Drive G C E  UPS Gate Collector

Datasheet: IRG7PH42UD1M , IRG7PG42UD , IRG7PH44K10D , MMG50S170B6EN , NGTB40N120FL , NGTB40N120FLWG , RJH1CV7DPK , IRGP4760 , IXGH40N60C2D1 , STGW25M120DF3 , STGWA25M120DF3 , NGTB30N120IHL , NGTB30N120IHLWG , NGTB40N120IHL , NGTB40N120IHLWG , IRGP4063D1 , IRGP4660D .

 

 
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