NGTB40N120IHLWG Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: NGTB40N120IHLWG  📄📄 

Tipo de transistor: IGBT

Polaridad de transistor: N

ESPECIFICACIONES TECNICAS

Pcⓘ - Máxima potencia disipada: 104 W

|Vce|ⓘ - Tensión máxima colector-emisor: 1200 V

|Vge|ⓘ - Tensión máxima puerta-emisor: 20 V

|Ic|ⓘ - Colector de Corriente Continua a 25℃: 40 A

Tjⓘ - Temperatura máxima de unión: 150 ℃

CARACTERÍSTICAS ELÉCTRICAS

|VCEsat|ⓘ - Voltaje de saturación colector-emisor, typ: 1.9 V @25℃

Coesⓘ - Capacitancia de salida, typ: 245 pF

Encapsulados: TO247

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NGTB40N120IHLWG datasheet

 0.1. Size:160K  onsemi
 ngtb40n120ihlwg.pdf pdf_icon

NGTB40N120IHLWG

NGTB40N120IHLWG IGBT This Insulated Gate Bipolar Transistor (IGBT) features a robust and cost effective Field Stop (FS) Trench construction, and provides superior performance in demanding switching applications, offering both low on-state voltage and minimal switching loss. The IGBT is well suited for resonant or soft switching applications. Incorporated http //onsemi.com into the devic

 1.1. Size:160K  onsemi
 ngtb40n120ihl.pdf pdf_icon

NGTB40N120IHLWG

NGTB40N120IHLWG IGBT This Insulated Gate Bipolar Transistor (IGBT) features a robust and cost effective Field Stop (FS) Trench construction, and provides superior performance in demanding switching applications, offering both low on-state voltage and minimal switching loss. The IGBT is well suited for resonant or soft switching applications. Incorporated http //onsemi.com into the devic

 2.1. Size:177K  onsemi
 ngtb40n120ihrwg.pdf pdf_icon

NGTB40N120IHLWG

NGTB40N120IHRWG IGBT with Monolithic Free Wheeling Diode This Insulated Gate Bipolar Transistor (IGBT) features a robust and cost effective Field Stop (FS) Trench construction, and provides superior performance in demanding switching applications, offering both low on-state voltage and minimal switching loss. The IGBT is http //onsemi.com well suited for resonant or soft switching appli

 2.2. Size:181K  onsemi
 ngtb40n120ihr.pdf pdf_icon

NGTB40N120IHLWG

NGTB40N120IHRWG IGBT with Monolithic Free Wheeling Diode This Insulated Gate Bipolar Transistor (IGBT) features a robust and cost effective Field Stop (FS) Trench construction, and provides superior performance in demanding switching applications, offering both low on-state voltage and minimal switching loss. The IGBT is http //onsemi.com well suited for resonant or soft switching appli

MOSTRAR MÁS

Otros transistores... RJH1CV7DPK, IRGP4760, IRGP4760D, STGW25M120DF3, STGWA25M120DF3, NGTB30N120IHL, NGTB30N120IHLWG, NGTB40N120IHL, BT60T60ANFK, IRGP4063D1, IRGP4660D, IRGP6660D, MMG50H120X6HN, MMG50S120B6HN, IKW50N60T, NGTB15N120IHR, NGTB15N120IHRWG