NGTB40N120IHLWG PDF and Equivalents Search

 

NGTB40N120IHLWG Specs and Replacement

Type Designator: NGTB40N120IHLWG

Type: IGBT

Type of IGBT Channel: N

Absolute Maximum Ratings

Pc ⓘ - Maximum Power Dissipation: 104 W

|Vce|ⓘ - Maximum Collector-Emitter Voltage: 1200 V

|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V

|Ic| ⓘ - Maximum Collector Current: 40 A @25℃

Tj ⓘ - Maximum Junction Temperature: 150 ℃

Electrical Characteristics

|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.9 V @25℃

Coesⓘ - Output Capacitance, typ: 245 pF

Package: TO247

 NGTB40N120IHLWG Substitution

- IGBT ⓘ Cross-Reference Search

 

NGTB40N120IHLWG datasheet

 0.1. Size:160K  onsemi
 ngtb40n120ihlwg.pdf pdf_icon

NGTB40N120IHLWG

NGTB40N120IHLWG IGBT This Insulated Gate Bipolar Transistor (IGBT) features a robust and cost effective Field Stop (FS) Trench construction, and provides superior performance in demanding switching applications, offering both low on-state voltage and minimal switching loss. The IGBT is well suited for resonant or soft switching applications. Incorporated http //onsemi.com into the devic... See More ⇒

 1.1. Size:160K  onsemi
 ngtb40n120ihl.pdf pdf_icon

NGTB40N120IHLWG

NGTB40N120IHLWG IGBT This Insulated Gate Bipolar Transistor (IGBT) features a robust and cost effective Field Stop (FS) Trench construction, and provides superior performance in demanding switching applications, offering both low on-state voltage and minimal switching loss. The IGBT is well suited for resonant or soft switching applications. Incorporated http //onsemi.com into the devic... See More ⇒

 2.1. Size:177K  onsemi
 ngtb40n120ihrwg.pdf pdf_icon

NGTB40N120IHLWG

NGTB40N120IHRWG IGBT with Monolithic Free Wheeling Diode This Insulated Gate Bipolar Transistor (IGBT) features a robust and cost effective Field Stop (FS) Trench construction, and provides superior performance in demanding switching applications, offering both low on-state voltage and minimal switching loss. The IGBT is http //onsemi.com well suited for resonant or soft switching appli... See More ⇒

 2.2. Size:181K  onsemi
 ngtb40n120ihr.pdf pdf_icon

NGTB40N120IHLWG

NGTB40N120IHRWG IGBT with Monolithic Free Wheeling Diode This Insulated Gate Bipolar Transistor (IGBT) features a robust and cost effective Field Stop (FS) Trench construction, and provides superior performance in demanding switching applications, offering both low on-state voltage and minimal switching loss. The IGBT is http //onsemi.com well suited for resonant or soft switching appli... See More ⇒

SHOW MORE

Specs: RJH1CV7DPK , IRGP4760 , IRGP4760D , STGW25M120DF3 , STGWA25M120DF3 , NGTB30N120IHL , NGTB30N120IHLWG , NGTB40N120IHL , IRGB20B60PD1 , IRGP4063D1 , IRGP4660D , IRGP6660D , MMG50H120X6HN , MMG50S120B6HN , IKW50N60T , NGTB15N120IHR , NGTB15N120IHRWG .

Keywords - NGTB40N120IHLWG transistor spec

 NGTB40N120IHLWG cross reference
 NGTB40N120IHLWG equivalent finder
 NGTB40N120IHLWG lookup
 NGTB40N120IHLWG substitution
 NGTB40N120IHLWG replacement

 

 

 


 
↑ Back to Top
.