IRGP4063D1 Todos los transistores

 

IRGP4063D1 IGBT Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: IRGP4063D1

Tipo de transistor: IGBT

Polaridad de transistor: N

ESPECIFICACIONES TECNICAS

Pcⓘ - Máxima potencia disipada: 330 W

|Vce|ⓘ - Tensión máxima colector-emisor: 600 V

|Vge|ⓘ - Tensión máxima puerta-emisor: 20 V

|Ic|ⓘ - Colector de Corriente Continua a 25℃: 100 A

Tjⓘ - Temperatura máxima de unión: 175 ℃

CARACTERÍSTICAS ELÉCTRICAS

|VCEsat|ⓘ - Voltaje de saturación colector-emisor, typ: 1.65 V @25℃

trⓘ - Tiempo de subida, typ: 50 nS

Coesⓘ - Capacitancia de salida, typ: 200 pF

Encapsulados: TO247

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IRGP4063D1 datasheet

 ..1. Size:1407K  international rectifier
irgp4063d1.pdf pdf_icon

IRGP4063D1

IRGP4063D1PbF IRGP4063D1-EPbF Insulated Gate Bipolar Transistor with Ultrafast Soft Recovery Diode VCES = 600V C G IC = 60A, TC =100 C G tSC 5 s, TJ(max) = 175 C G E VCE(ON) typ. = 1.65V @ IC = 48A E C C E G G n-channel Applica ons IRGP4063D1PbF IRGP4063D1 EPbF Industrial Motor Drive G C E Inverters UPS Gate Collecto

 5.1. Size:340K  international rectifier
irgp4063dpbf.pdf pdf_icon

IRGP4063D1

 5.2. Size:325K  international rectifier
auirgp4063d auirgp4063d-e.pdf pdf_icon

IRGP4063D1

AUIRGP4063D AUTOMOTIVE GRADE AUIRGP4063D-E INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C VCES = 600V Features Low VCE (ON) Trench IGBT Technology IC = 60A, TC = 100 C Low switching losses Maximum Junction temperature 175 C G tSC 5 s, TJ(max) = 175 C 5 S short circuit SOA Square RBSOA E VCE(on) typ. = 1.6V 100% of the

 5.3. Size:782K  international rectifier
irgp4063d.pdf pdf_icon

IRGP4063D1

PD - 97210 IRGP4063DPbF INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features Low VCE (ON) Trench IGBT Technology C VCES = 600V Low switching losses Maximum Junction temperature 175 C IC = 48A, TC = 100 C 5 S short circuit SOA Square RBSOA G tSC 5 s, TJ(max) = 175 C 100% of the parts tested for 4X rated current (ILM) P

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