Справочник IGBT. IRGP4063D1

 

IRGP4063D1 - IGBT справочник. Даташиты. Аналоги. Параметры и характеристики.

Наименование: IRGP4063D1

Тип транзистора: IGBT

Тип управляющего канала: N-Channel

Максимальная рассеиваемая мощность (Pc), W: 330

Предельно-допустимое напряжение коллектор-эмиттер |Vce|, V: 600

Максимально допустимое напряжение эмиттер-затвор |Vge|, V: 20

Максимальный постоянный ток коллектора |Ic| @25℃, A: 100

Напряжение насыщения коллектор-эмиттер типовое |VCE(sat)|, V: 1.65

Максимальная температура перехода (Tj), ℃: 175

Время нарастания типовое (tr), nS: 50

Емкость коллектора типовая (Cc), pf: 200

Тип корпуса: TO247

Аналог (замена) для IRGP4063D1

 

 

IRGP4063D1 Datasheet (PDF)

 ..1. Size:1407K  international rectifier
 irgp4063d1.pdf

IRGP4063D1 IRGP4063D1

IRGP4063D1PbF IRGP4063D1-EPbF Insulated Gate Bipolar Transistor with Ultrafast Soft Recovery Diode VCES = 600V CG IC = 60A, TC =100C G tSC 5s, TJ(max) = 175C GE VCE(ON) typ. = 1.65V @ IC = 48A E C C EG G n-channelApplica onsIRGP4063D1PbFIRGP4063D1EPbFIndustrialMotorDriveG C EInvertersUPSGate Collecto

 5.1. Size:782K  international rectifier
 irgp4063d.pdf

IRGP4063D1 IRGP4063D1

PD - 97210IRGP4063DPbFINSULATED GATE BIPOLAR TRANSISTOR WITHULTRAFAST SOFT RECOVERY DIODEFeatures Low VCE (ON) Trench IGBT Technology CVCES = 600V Low switching losses Maximum Junction temperature 175 CIC = 48A, TC = 100C 5 S short circuit SOA Square RBSOAG tSC 5s, TJ(max) = 175C 100% of the parts tested for 4X rated current (ILM) P

 5.2. Size:337K  international rectifier
 auirgp4063d.pdf

IRGP4063D1 IRGP4063D1

AUIRGP4063DAUTOMOTIVE GRADEAUIRGP4063D-EINSULATED GATE BIPOLAR TRANSISTOR WITHULTRAFAST SOFT RECOVERY DIODECVCES = 600VFeatures Low VCE (ON) Trench IGBT TechnologyIC = 60A, TC = 100C Low switching losses Maximum Junction temperature 175 CG tSC 5s, TJ(max) = 175C 5 S short circuit SOA Square RBSOAEVCE(on) typ. = 1.6V 100% of the

 5.3. Size:340K  infineon
 irgp4063dpbf.pdf

IRGP4063D1 IRGP4063D1

IRGP4063DPbFIRGP4063D-EPbFINSULATED GATE BIPOLAR TRANSISTOR WITHULTRAFAST SOFT RECOVERY DIODEFeatures Low VCE (ON) Trench IGBT Technology CVCES = 600V Low switching losses Maximum Junction temperature 175 CIC = 48A, TC = 100C 5 S short circuit SOA Square RBSOAG tSC 5s, TJ(max) = 175C 100% of the parts tested for 4X rated current (ILM)

 5.4. Size:325K  infineon
 auirgp4063d auirgp4063d-e.pdf

IRGP4063D1 IRGP4063D1

AUIRGP4063DAUTOMOTIVE GRADEAUIRGP4063D-EINSULATED GATE BIPOLAR TRANSISTOR WITHULTRAFAST SOFT RECOVERY DIODECVCES = 600VFeatures Low VCE (ON) Trench IGBT TechnologyIC = 60A, TC = 100C Low switching losses Maximum Junction temperature 175 CG tSC 5s, TJ(max) = 175C 5 S short circuit SOA Square RBSOAEVCE(on) typ. = 1.6V 100% of the

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