IKW50N60T IGBT Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: IKW50N60T
Tipo de transistor: IGBT
Polaridad de transistor: N
ESPECIFICACIONES TECNICAS
Pcⓘ - Máxima potencia disipada: 333 W
|Vce|ⓘ - Tensión máxima colector-emisor: 600 V
|Vge|ⓘ - Tensión máxima puerta-emisor: 20 V
|Ic|ⓘ - Colector de Corriente Continua a 25℃: 80 A
|VCEsat|ⓘ - Voltaje de saturación colector-emisor, typ: 1.5 V @25℃
Tjⓘ - Temperatura máxima de unión: 175 ℃
trⓘ - Tiempo de subida, typ: 29 nS
Paquete / Cubierta: TO247
Búsqueda de reemplazo de IKW50N60T IGBT
IKW50N60T datasheet
ikw50n60t.pdf
IKW50N60T TrenchStop Series q Low Loss DuoPack IGBT in Trench and Fieldstop technology with soft, fast recovery anti-parallel EmCon HE diode C Very low VCE(sat) 1.5 V (typ.) Maximum Junction Temperature 175 C Short circuit withstand time 5 s G E Designed for - Frequency Converters - Uninterrupted Power Supply Trench and Fieldstop technolog
ikw50n60trev2 4g.pdf
IKW50N60T TrenchStop Series q Low Loss DuoPack IGBT in TrenchStop and Fieldstop technology with soft, fast recovery anti-parallel EmCon HE diode C Very low VCE(sat) 1.5 V (typ.) Maximum Junction Temperature 175 C Short circuit withstand time 5 s G E Designed for - Frequency Converters - Uninterrupted Power Supply TrenchStop and Field
ikw50n60dtp.pdf
IGBT TRENCHSTOP Performance technology copacked with RAPID 1 fast anti-parallel diode IKW50N60DTP 600V DuoPack IGBT and diode TRENCHSTOPTM Performance series Data sheet Industrial Power Control IKW50N60DTP TRENCHSTOPTM Performance Series High speed IGBT in Trench and Fieldstop technology C Features TRENCHSTOPTM technology offering very low V CEsat low turn-off losse
Otros transistores... NGTB30N120IHLWG , NGTB40N120IHL , NGTB40N120IHLWG , IRGP4063D1 , IRGP4660D , IRGP6660D , MMG50H120X6HN , MMG50S120B6HN , FGPF4533 , NGTB15N120IHR , NGTB15N120IHRWG , NGTB20N120IH , NGTB20N120IHWG , MMG150H160UX6TN , MMG75H120X6TN , MMG75S120B6TN , MMG75W120X6TN .
Liste
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