IKW50N60T Todos los transistores

 

IKW50N60T - IGBT. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: IKW50N60T
   Tipo de transistor: IGBT + Diode
   Código de marcado: K50T60
   Polaridad de transistor: N

ESPECIFICACIONES TECNICAS


   Máxima potencia disipada (Pc), W: 333
   Tensión máxima colector-emisor |Vce|, V: 600
   Tensión máxima puerta-emisor |Vge|, V: 20
   Colector de Corriente Continua a 25℃ |Ic|, A: 80
   Voltaje de saturación colector-emisor |VCE(sat)|, typ, V: 1.5
   Temperatura máxima de unión (Tj), ℃: 175
   Tiempo de subida (tr), typ, nS: 29
   Paquete / Cubierta: TO247

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IKW50N60T Datasheet (PDF)

 ..1. Size:416K  infineon
ikw50n60t.pdf

IKW50N60T
IKW50N60T

IKW50N60T TrenchStop Series q Low Loss DuoPack : IGBT in Trench and Fieldstop technology with soft, fast recovery anti-parallel EmCon HE diode C Very low VCE(sat) 1.5 V (typ.) Maximum Junction Temperature 175 C Short circuit withstand time 5s GE Designed for : - Frequency Converters - Uninterrupted Power Supply Trench and Fieldstop technolog

 0.1. Size:412K  infineon
ikw50n60trev2 4g.pdf

IKW50N60T
IKW50N60T

IKW50N60T TrenchStop Series q Low Loss DuoPack : IGBT in TrenchStop and Fieldstop technology with soft, fast recovery anti-parallel EmCon HE diode C Very low VCE(sat) 1.5 V (typ.) Maximum Junction Temperature 175 C Short circuit withstand time 5s GE Designed for : - Frequency Converters - Uninterrupted Power Supply TrenchStop and Field

 6.1. Size:1551K  infineon
ikw50n60dtp.pdf

IKW50N60T
IKW50N60T

IGBTTRENCHSTOP Performance technology copacked with RAPID 1fast anti-parallel diodeIKW50N60DTP600V DuoPack IGBT and diodeTRENCHSTOPTM Performance seriesData sheetIndustrial Power ControlIKW50N60DTPTRENCHSTOPTM Performance SeriesHigh speed IGBT in Trench and Fieldstop technologyCFeatures:TRENCHSTOPTM technology offering very low VCEsat low turn-off losse

 6.2. Size:2179K  infineon
ikw50n60h3.pdf

IKW50N60T
IKW50N60T

IGBTHigh speed DuoPack: IGBT in Trench and Fieldstop technologywith soft, fast recovery anti-parallel diodeIKW50N60H3600V high speed switching series third generationData sheetIndustrial Power ControlIKW50N60H3High speed switching series third generationHigh speed IGBT in Trench and Fieldstop technologyCFeatures:TRENCHSTOPTM technology offering very low VCEsat

 6.3. Size:1971K  infineon
aikw50n60ct.pdf

IKW50N60T
IKW50N60T

AIKW50N60CTTRENCHSTOPTM SeriesLow Loss DuoPack: IGBT in TRENCHSTOPTM and Fieldstop technologywith soft, fast recovery antiparallel Emitter Controlled diodeCFeatures: Automotive AEC-Q101 qualified Designed for DC/AC converters for Automotive Application Very low V 1.5V (typ.)CE(sat) Maximum junction temperature 175CG Dynamically stress testedE Shor

 6.4. Size:1642K  infineon
ikw50n60h3 rev1 1g.pdf

IKW50N60T
IKW50N60T

IGBTHigh speed DuoPack: IGBT in Trench and Fieldstop technologywith soft, fast recovery anti-parallel diodeIKW50N60H3600V high speed switching series third generationDatasheetIndustrial & MultimarketIKW50N60H3High speed switching series third generationHigh speed IGBT in Trench and Fieldstop technologyCFeatures:TRENCHSTOPTM technology offering very low VCEsat

Otros transistores... NGTB30N120IHLWG , NGTB40N120IHL , NGTB40N120IHLWG , IRGP4063D1 , IRGP4660D , IRGP6660D , MMG50H120X6HN , MMG50S120B6HN , DG40F12T2 , NGTB15N120IHR , NGTB15N120IHRWG , NGTB20N120IH , NGTB20N120IHWG , MMG150H160UX6TN , MMG75H120X6TN , MMG75S120B6TN , MMG75W120X6TN .

 

 
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