IKW50N60T Datasheet. Specs and Replacement
Type Designator: IKW50N60T 📄📄
Type: IGBT
Type of IGBT Channel: N
Absolute Maximum Ratings
Pc ⓘ - Maximum Power Dissipation: 333 W
|Vce|ⓘ - Maximum Collector-Emitter Voltage: 600 V
|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
|Ic| ⓘ - Maximum Collector Current: 80 A @25℃
Tj ⓘ - Maximum Junction Temperature: 175 ℃
Electrical Characteristics
|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.5 V @25℃
Package: TO247
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IKW50N60T Substitution
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IKW50N60T datasheet
ikw50n60t.pdf
IKW50N60T TrenchStop Series q Low Loss DuoPack IGBT in Trench and Fieldstop technology with soft, fast recovery anti-parallel EmCon HE diode C Very low VCE(sat) 1.5 V (typ.) Maximum Junction Temperature 175 C Short circuit withstand time 5 s G E Designed for - Frequency Converters - Uninterrupted Power Supply Trench and Fieldstop technolog... See More ⇒
ikw50n60trev2 4g.pdf
IKW50N60T TrenchStop Series q Low Loss DuoPack IGBT in TrenchStop and Fieldstop technology with soft, fast recovery anti-parallel EmCon HE diode C Very low VCE(sat) 1.5 V (typ.) Maximum Junction Temperature 175 C Short circuit withstand time 5 s G E Designed for - Frequency Converters - Uninterrupted Power Supply TrenchStop and Field... See More ⇒
ikw50n60dtp.pdf
IGBT TRENCHSTOP Performance technology copacked with RAPID 1 fast anti-parallel diode IKW50N60DTP 600V DuoPack IGBT and diode TRENCHSTOPTM Performance series Data sheet Industrial Power Control IKW50N60DTP TRENCHSTOPTM Performance Series High speed IGBT in Trench and Fieldstop technology C Features TRENCHSTOPTM technology offering very low V CEsat low turn-off losse... See More ⇒
Specs: NGTB30N120IHLWG, NGTB40N120IHL, NGTB40N120IHLWG, IRGP4063D1, IRGP4660D, IRGP6660D, MMG50H120X6HN, MMG50S120B6HN, KGF75N65KDF, NGTB15N120IHR, NGTB15N120IHRWG, NGTB20N120IH, NGTB20N120IHWG, MMG150H160UX6TN, MMG75H120X6TN, MMG75S120B6TN, MMG75W120X6TN
Keywords - IKW50N60T transistor spec
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