MMG150H160UX6TN IGBT Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: MMG150H160UX6TN
Tipo de transistor: IGBT
Polaridad de transistor: N
ESPECIFICACIONES TECNICAS
Pcⓘ - Máxima potencia disipada: 348 W
|Vce|ⓘ - Tensión máxima colector-emisor: 1200 V
|Vge|ⓘ - Tensión máxima puerta-emisor: 20 V
|Ic|ⓘ - Colector de Corriente Continua a 25℃: 75 A
|VCEsat|ⓘ - Voltaje de saturación colector-emisor, typ: 1.7 V @25℃
Tjⓘ - Temperatura máxima de unión: 150 ℃
trⓘ - Tiempo de subida, typ: 30 nS
Paquete / Cubierta: MODULE
Búsqueda de reemplazo de MMG150H160UX6TN IGBT
MMG150H160UX6TN datasheet
mmg150h160ux6tn.pdf
MMG150H160UX6TN 3-Phase Rectifier Bridge with Brake Module June 2015 Version 01 RoHS Compliant PRODUCT FEATURES Low saturation voltage and positive temperature coefficient Fast switching and short tail current Free wheeling diodes with fast and soft reverse recovery Low switching losses APPLICATIONS Drive inverters with brake system BRAKE-CHOPPER SECTOR IGBT-CHOPP
mmg150hb060b6en.pdf
MMG150HB060B6EN 600V 150A IGBT Module May 2015 Version 01 RoHS Compliant PRODUCT FEATURES IGBT3 CHIP(Trench+Field Stop technology) High short circuit capability,self limiting short circuit current VCE(sat) with positive temperature coefficient Fast switching and short tail current Free wheeling diodes with fast and soft reverse recovery Low switching losses APP
mmg150hb060h6en.pdf
MMG150HB060H6EN 600V 150A Four-Pack Module May 2015 Version 01 RoHS Compliant PRODUCT FEATURES IGBT3 CHIP(Trench+Field Stop technology) High short circuit capability,self limiting short circuit current VCE(sat) with positive temperature coefficient Fast switching and short tail current Free wheeling diodes with fast and soft reverse recovery Low switching losses
Otros transistores... IRGP6660D , MMG50H120X6HN , MMG50S120B6HN , IKW50N60T , NGTB15N120IHR , NGTB15N120IHRWG , NGTB20N120IH , NGTB20N120IHWG , FGH40N60SFD , MMG75H120X6TN , MMG75S120B6TN , MMG75W120X6TN , MMG75W120XB6TN , IHW30N120R3 , IHW30N135R3 , IRG8P50N120KD , MMG100HB060H6EN .
History: MMG50S120B6HN | SGH30N60RUF
History: MMG50S120B6HN | SGH30N60RUF
Liste
Recientemente añadidas las descripciónes de los transistores
IGBT: JJT40N120SE | JJT40N120HE | JJT30N65UE | JJT30N65SY | JJT30N65SS | JJT30N65SE | JJT40N65UH | JJT40N65UE | JJT40N65LE | JJT40N65HE | JJT40N135UE
Popular searches
2n5884 | bc640 | 2sc756 | oc44 transistor datasheet | 2sa1210 | 2sc3792 | mps2907a transistor equivalent | 2sc1626



