MMG150H160UX6TN Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: MMG150H160UX6TN 📄📄
Tipo de transistor: IGBT
Polaridad de transistor: N
ESPECIFICACIONES TECNICAS
Pcⓘ - Máxima potencia disipada: 348 W
|Vce|ⓘ - Tensión máxima colector-emisor: 1200 V
|Vge|ⓘ - Tensión máxima puerta-emisor: 20 V
|Ic|ⓘ - Colector de Corriente Continua a 25℃: 75 A
Tjⓘ - Temperatura máxima de unión: 150 ℃
CARACTERÍSTICAS ELÉCTRICAS
|VCEsat|ⓘ - Voltaje de saturación colector-emisor, typ: 1.7 V @25℃
trⓘ - Tiempo de subida, typ: 30 nS
Encapsulados: MODULE
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MMG150H160UX6TN datasheet
mmg150h160ux6tn.pdf
MMG150H160UX6TN 3-Phase Rectifier Bridge with Brake Module June 2015 Version 01 RoHS Compliant PRODUCT FEATURES Low saturation voltage and positive temperature coefficient Fast switching and short tail current Free wheeling diodes with fast and soft reverse recovery Low switching losses APPLICATIONS Drive inverters with brake system BRAKE-CHOPPER SECTOR IGBT-CHOPP
mmg150hb060b6en.pdf
MMG150HB060B6EN 600V 150A IGBT Module May 2015 Version 01 RoHS Compliant PRODUCT FEATURES IGBT3 CHIP(Trench+Field Stop technology) High short circuit capability,self limiting short circuit current VCE(sat) with positive temperature coefficient Fast switching and short tail current Free wheeling diodes with fast and soft reverse recovery Low switching losses APP
mmg150hb060h6en.pdf
MMG150HB060H6EN 600V 150A Four-Pack Module May 2015 Version 01 RoHS Compliant PRODUCT FEATURES IGBT3 CHIP(Trench+Field Stop technology) High short circuit capability,self limiting short circuit current VCE(sat) with positive temperature coefficient Fast switching and short tail current Free wheeling diodes with fast and soft reverse recovery Low switching losses
Otros transistores... IRGP6660D, MMG50H120X6HN, MMG50S120B6HN, IKW50N60T, NGTB15N120IHR, NGTB15N120IHRWG, NGTB20N120IH, NGTB20N120IHWG, MBQ60T65PES, MMG75H120X6TN, MMG75S120B6TN, MMG75W120X6TN, MMG75W120XB6TN, IHW30N120R3, IHW30N135R3, IRG8P50N120KD, MMG100HB060H6EN
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