MMG150H160UX6TN Todos los transistores

 

MMG150H160UX6TN - IGBT. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: MMG150H160UX6TN
   Tipo de transistor: IGBT
   Polaridad de transistor: N

ESPECIFICACIONES TECNICAS


   Pcⓘ - Máxima potencia disipada: 348 W
   |Vce|ⓘ - Tensión máxima colector-emisor: 1200 V
   |Vge|ⓘ - Tensión máxima puerta-emisor: 20 V
   |Ic|ⓘ - Colector de Corriente Continua a 25℃: 75 A
   |VCEsat|ⓘ - Voltaje de saturación colector-emisor, typ: 1.7 V @25℃
   |VGEth|ⓘ - Tensión máxima de puerta-umbral: 6.5 V
   Tjⓘ - Temperatura máxima de unión: 150 ℃
   trⓘ - Tiempo de subida, typ: 30 nS
   Qgⓘ - Carga total de la puerta, typ: 700 nC
   Paquete / Cubierta: MODULE
 

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MMG150H160UX6TN Datasheet (PDF)

 0.1. Size:146K  macmic
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MMG150H160UX6TN

MMG150H160UX6TN3-Phase Rectifier Bridge with Brake ModuleJune 2015 Version 01 RoHS CompliantPRODUCT FEATURES Low saturation voltage and positive temperature coefficient Fast switching and short tail current Free wheeling diodes with fast and soft reverse recovery Low switching lossesAPPLICATIONS Drive inverters with brake systemBRAKE-CHOPPER SECTORIGBT-CHOPP

 7.1. Size:314K  macmic
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MMG150H160UX6TN

MMG150HB060B6EN600V 150A IGBT ModuleMay 2015 Version 01 RoHS CompliantPRODUCT FEATURES IGBT3 CHIP(Trench+Field Stop technology) High short circuit capability,self limiting short circuit current VCE(sat) with positive temperature coefficient Fast switching and short tail current Free wheeling diodes with fast and soft reverse recovery Low switching lossesAPP

 7.2. Size:292K  macmic
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MMG150H160UX6TN

MMG150HB060H6EN600V 150A Four-Pack ModuleMay 2015 Version 01 RoHS CompliantPRODUCT FEATURES IGBT3 CHIP(Trench+Field Stop technology) High short circuit capability,self limiting short circuit current VCE(sat) with positive temperature coefficient Fast switching and short tail current Free wheeling diodes with fast and soft reverse recovery Low switching losses

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