MMG150H160UX6TN IGBT. Datasheet pdf. Equivalent
Type Designator: MMG150H160UX6TN
Type: IGBT
Type of IGBT Channel: N
Pcⓘ - Maximum Power Dissipation: 348 W
|Vce|ⓘ - Maximum Collector-Emitter Voltage: 1200 V
|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
|Ic|ⓘ - Maximum Collector Current: 75 A @25℃
|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.7 V @25℃
Tjⓘ - Maximum Junction Temperature: 150 ℃
trⓘ - Rise Time, typ: 30 nS
Package: MODULE
MMG150H160UX6TN Transistor Equivalent Substitute - IGBT Cross-Reference Search
MMG150H160UX6TN Datasheet (PDF)
mmg150h160ux6tn.pdf
MMG150H160UX6TN3-Phase Rectifier Bridge with Brake ModuleJune 2015 Version 01 RoHS CompliantPRODUCT FEATURES Low saturation voltage and positive temperature coefficient Fast switching and short tail current Free wheeling diodes with fast and soft reverse recovery Low switching lossesAPPLICATIONS Drive inverters with brake systemBRAKE-CHOPPER SECTORIGBT-CHOPP
mmg150hb060b6en.pdf
MMG150HB060B6EN600V 150A IGBT ModuleMay 2015 Version 01 RoHS CompliantPRODUCT FEATURES IGBT3 CHIP(Trench+Field Stop technology) High short circuit capability,self limiting short circuit current VCE(sat) with positive temperature coefficient Fast switching and short tail current Free wheeling diodes with fast and soft reverse recovery Low switching lossesAPP
mmg150hb060h6en.pdf
MMG150HB060H6EN600V 150A Four-Pack ModuleMay 2015 Version 01 RoHS CompliantPRODUCT FEATURES IGBT3 CHIP(Trench+Field Stop technology) High short circuit capability,self limiting short circuit current VCE(sat) with positive temperature coefficient Fast switching and short tail current Free wheeling diodes with fast and soft reverse recovery Low switching losses
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