STGW25S120DF3 Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: STGW25S120DF3  📄📄 

Tipo de transistor: IGBT

Polaridad de transistor: N

ESPECIFICACIONES TECNICAS

Pcⓘ - Máxima potencia disipada: 375 W

|Vce|ⓘ - Tensión máxima colector-emisor: 1200 V

|Vge|ⓘ - Tensión máxima puerta-emisor: 20 V

|Ic|ⓘ - Colector de Corriente Continua a 25℃: 25 A

Tjⓘ - Temperatura máxima de unión: 175 ℃

CARACTERÍSTICAS ELÉCTRICAS

|VCEsat|ⓘ - Voltaje de saturación colector-emisor, typ: 1.8 V @25℃

trⓘ - Tiempo de subida, typ: 11.8 nS

Coesⓘ - Capacitancia de salida, typ: 125 pF

Encapsulados: TO247

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STGW25S120DF3 datasheet

 ..1. Size:698K  st
 stgw25s120df3.pdf pdf_icon

STGW25S120DF3

STGW25S120DF3, STGWA25S120DF3 Trench gate field-stop IGBT, S series 1200 V, 25 A low drop Datasheet - production data Features 10 s of short-circuit withstand time VCE(sat) = 1.6 V (typ.) @ IC = 25 A Tight parameter distribution Safer paralleling Low thermal resistance 3 2 Soft and fast recovery antiparallel diode 1 TO-247 Applications TO-247 long le

 8.1. Size:952K  st
 stgw25h120f2.pdf pdf_icon

STGW25S120DF3

STGW25H120F2, STGWA25H120F2 Trench gate field-stop IGBT, H series 1200 V, 25 A high speed Datasheet - production data Features Maximum junction temperature TJ = 175 C High speed switching series Minimized tail current VCE(sat) = 2.1 V (typ.) @ IC = 25 A 5 s minimum short circuit withstand time at 3 3 2 2 TJ=150 C 1 1 Tight parameters distribution

 8.2. Size:1046K  st
 stgw25m120df3.pdf pdf_icon

STGW25S120DF3

STGW25M120DF3 STGWA25M120DF3 Trench gate field-stop IGBT, M series 1200 V, 25 A low loss Datasheet - production data Features 10 s of short-circuit withstand time VCE(sat) = 1.85 V (typ.) @ IC = 25 A Tight parameters distribution Safer paralleling Low thermal resistance 3 Soft and fast recovery antiparallel diode 2 1 Applications TO-247 Industria

 8.3. Size:732K  st
 stgw25h120df2.pdf pdf_icon

STGW25S120DF3

STGW25H120DF2, STGWA25H120DF2 Trench gate field-stop IGBT, H series 1200 V, 25 A high speed Datasheet - production data Features Maximum junction temperature TJ = 175 C High speed switching series Minimized tail current VCE(sat) = 2.1 V (typ.) @ IC = 25 A 5 s minimum short circuit withstand time at 3 3 TJ=150 C 2 2 1 1 Safe paralleling TO-247

MOSTRAR MÁS

Otros transistores... STGW60H65DF, STGW60H65DRF, NGTB40N60FL2, NGTB40N60FL2WG, NGTB40N65FL2, MMG75S060B6EN, STGW25H120DF2, STGW25H120F2, JT075N065WED, STGW28IH125DF, STGW60H60DLFB, STGW60H65DFB, STGW60H65FB, STGW60V60DF, STGW60V60F, STGWA25H120DF2, STGWA25H120F2