STGW28IH125DF Todos los transistores

 

STGW28IH125DF - IGBT. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: STGW28IH125DF
   Tipo de transistor: IGBT + Diode
   Código de marcado: G28IH125DF
   Polaridad de transistor: N

ESPECIFICACIONES TECNICAS


   Pcⓘ - Máxima potencia disipada: 375 W
   |Vce|ⓘ - Tensión máxima colector-emisor: 1250 V
   |Vge|ⓘ - Tensión máxima puerta-emisor: 20 V
   |Ic|ⓘ - Colector de Corriente Continua a 25℃: 25 A
   |VCEsat|ⓘ - Voltaje de saturación colector-emisor, typ: 2.25 V @25℃
   |VGEth|ⓘ - Tensión máxima de puerta-umbral: 7 V
   Tjⓘ - Temperatura máxima de unión: 175 ℃
   Coesⓘ - Capacitancia de salida, typ: 139 pF
   Qgⓘ - Carga total de la puerta, typ: 114 nC
   Paquete / Cubierta: TO247
 

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STGW28IH125DF Datasheet (PDF)

 ..1. Size:1376K  st
stgw28ih125df.pdf pdf_icon

STGW28IH125DF

STGW28IH125DF STGWT28IH125DF1250 V, 30 A IH series trench gate field-stop IGBTDatasheet - production dataFeaturesTAB Designed for soft commutation only Maximum junction temperature: TJ = 175 C Minimized tail current VCE(sat) = 2.0 V (typ.) @ IC = 25 A32 Tight parameters distribution312 Safe paralleling1 Low VF soft recovery co-package

 9.1. Size:952K  st
stgw25h120f2.pdf pdf_icon

STGW28IH125DF

STGW25H120F2, STGWA25H120F2Trench gate field-stop IGBT, H series 1200 V, 25 A high speedDatasheet - production dataFeatures Maximum junction temperature: TJ = 175 C High speed switching series Minimized tail current VCE(sat) = 2.1 V (typ.) @ IC = 25 A 5 s minimum short circuit withstand time at 3 32 2 TJ=150 C1 1 Tight parameters distribution

 9.2. Size:294K  st
stgw20nb60h.pdf pdf_icon

STGW28IH125DF

STGW20NB60HN-CHANNEL 20A - 600V TO-247PowerMESH IGBTTYPE VCES VCE(sat) ICSTGW20NB60H 600 V

 9.3. Size:1046K  st
stgw25m120df3.pdf pdf_icon

STGW28IH125DF

STGW25M120DF3 STGWA25M120DF3Trench gate field-stop IGBT, M series 1200 V, 25 A low lossDatasheet - production dataFeatures 10 s of short-circuit withstand time VCE(sat) = 1.85 V (typ.) @ IC = 25 A Tight parameters distribution Safer paralleling Low thermal resistance3 Soft and fast recovery antiparallel diode21ApplicationsTO-247 Industria

Otros transistores... APT20GN60BG , APT20GN60KG , APT20GN60SG , AOK20B60D1 , F3L30R06W1E3_B11 , WGW15G120N , WGW15G120W , IRG4MC50U , GT30F131 , AOB10B60D , AOK10B60D , AOT10B60D , NGB8207AB , NGB8207B , AOB15B60D , IRGSL8B60K , AOK15B60D .

 

 
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