STGW28IH125DF Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: STGW28IH125DF 📄📄
Tipo de transistor: IGBT
Polaridad de transistor: N
ESPECIFICACIONES TECNICAS
Pcⓘ - Máxima potencia disipada: 375 W
|Vce|ⓘ - Tensión máxima colector-emisor: 1250 V
|Vge|ⓘ - Tensión máxima puerta-emisor: 20 V
|Ic|ⓘ - Colector de Corriente Continua a 25℃: 25 A
Tjⓘ - Temperatura máxima de unión: 175 ℃
CARACTERÍSTICAS ELÉCTRICAS
|VCEsat|ⓘ - Voltaje de saturación colector-emisor, typ: 2.25 V @25℃
Coesⓘ - Capacitancia de salida, typ: 139 pF
Encapsulados: TO247
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STGW28IH125DF datasheet
..1. Size:1376K st
stgw28ih125df.pdf 

STGW28IH125DF STGWT28IH125DF 1250 V, 30 A IH series trench gate field-stop IGBT Datasheet - production data Features TAB Designed for soft commutation only Maximum junction temperature TJ = 175 C Minimized tail current VCE(sat) = 2.0 V (typ.) @ IC = 25 A 3 2 Tight parameters distribution 3 1 2 Safe paralleling 1 Low VF soft recovery co-package
9.1. Size:952K st
stgw25h120f2.pdf 

STGW25H120F2, STGWA25H120F2 Trench gate field-stop IGBT, H series 1200 V, 25 A high speed Datasheet - production data Features Maximum junction temperature TJ = 175 C High speed switching series Minimized tail current VCE(sat) = 2.1 V (typ.) @ IC = 25 A 5 s minimum short circuit withstand time at 3 3 2 2 TJ=150 C 1 1 Tight parameters distribution
9.2. Size:294K st
stgw20nb60h.pdf 

STGW20NB60H N-CHANNEL 20A - 600V TO-247 PowerMESH IGBT TYPE VCES VCE(sat) IC STGW20NB60H 600 V
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stgw25m120df3.pdf 

STGW25M120DF3 STGWA25M120DF3 Trench gate field-stop IGBT, M series 1200 V, 25 A low loss Datasheet - production data Features 10 s of short-circuit withstand time VCE(sat) = 1.85 V (typ.) @ IC = 25 A Tight parameters distribution Safer paralleling Low thermal resistance 3 Soft and fast recovery antiparallel diode 2 1 Applications TO-247 Industria
9.4. Size:1352K st
stgw20ih125df.pdf 

STGW20IH125DF STGWT20IH125DF 1250 V, 20 A IH series trench gate field-stop IGBT Datasheet - production data Features TAB Designed for soft commutation only Maximum junction temperature TJ = 175 C Minimized tail current VCE(sat) = 2.0 V (typ.) @ IC = 15 A 3 2 Tight parameters distribution 3 1 2 Safe paralleling 1 Very low VF soft recovery co-pa
9.5. Size:325K st
stgp20nb60k stgw20nb60k.pdf 

STGP20NB60K STGW20NB60K N-CHANNEL 20A - 600V - TO-220/TO-247 SHORT CIRCUIT PROOF PowerMESH IGBT TYPE VCES VCE(sat) IC STGP20NB60K 600 V
9.6. Size:1613K st
stgw20v60f.pdf 

STGFW20V60F, STGW20V60F, STGWT20V60F 600 V, 20 A very high speed trench gate field-stop IGBT Datasheet - production data Features Maximum junction temperature TJ = 175 C 1 1 1 Very high speed switching series 3 Tail-less switching off 2 Low saturation voltage VCE(sat) = 1.8 V (typ.) 1 TO-3PF @ IC = 20 A TAB Tight parameters distribution Safe par
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STGB20NC60V, STGP20NC60V, STGW20NC60V 30 A - 600 V - very fast IGBT Datasheet - production data Features High frequency operation up to 50 kHz Lower CRES / CIES ratio (no cross-conduction susceptibility) High current capability 3 3 2 2 1 1 Applications TO-247 TO-220 3 1 High frequency inverters UPS, motor drivers D PAK HF, SMPS and PFC in both hard
9.8. Size:90K st
stgw20nb60hd.pdf 

STGW20NB60HD N-CHANNEL 20A - 600V TO-247 PowerMESH IGBT TYPE VCES VCE(sat) IC STGW20NB60HD 600 V
9.9. Size:698K st
stgw25s120df3.pdf 

STGW25S120DF3, STGWA25S120DF3 Trench gate field-stop IGBT, S series 1200 V, 25 A low drop Datasheet - production data Features 10 s of short-circuit withstand time VCE(sat) = 1.6 V (typ.) @ IC = 25 A Tight parameter distribution Safer paralleling Low thermal resistance 3 2 Soft and fast recovery antiparallel diode 1 TO-247 Applications TO-247 long le
9.10. Size:303K st
stgw20nc60vd.pdf 

STGW20NC60VD N-CHANNEL 30A - 600V TO-247 Very Fast PowerMESH IGBT Table 1 General Features Figure 1 Package TYPE VCES VCE(sat) (Max) IC @25 C @100 C STGW20NC60VD 600 V
9.11. Size:1293K st
stgw20h60df stgwt20h60df.pdf 

STGW20H60DF, STGWT20H60DF 600 V, 20 A high speed trench gate field-stop IGBT Datasheet - production data Features High speed switching TAB Tight parameters distribution Safe paralleling Low thermal resistance Short-circuit rated 3 3 2 2 Ultrafast soft recovery antiparallel diode 1 1 TO-247 TO-3P Applications Motor control UPS, PFC Figure
9.12. Size:312K st
stgw20nb60kd.pdf 

STGW20NB60KD N-CHANNEL 20A - 600V - TO-247 SHORT CIRCUIT PROOF PowerMESH IGBT TYPE VCES VCE(sat) IC STGW20NB60KD 600 V
9.13. Size:732K st
stgw25h120df2.pdf 

STGW25H120DF2, STGWA25H120DF2 Trench gate field-stop IGBT, H series 1200 V, 25 A high speed Datasheet - production data Features Maximum junction temperature TJ = 175 C High speed switching series Minimized tail current VCE(sat) = 2.1 V (typ.) @ IC = 25 A 5 s minimum short circuit withstand time at 3 3 TJ=150 C 2 2 1 1 Safe paralleling TO-247
9.14. Size:1497K st
stgw20h65fb.pdf 

STGFW20H65FB, STGW20H65FB, STGWT20H65FB Trench gate field-stop IGBT, HB series 650 V, 20 A high speed Datasheet - production data TAB Features Maximum junction temperature TJ = 175 C High speed switching series 3 Minimized tail current 2 1 VCE(sat) = 1.55 V (typ.) @ IC = 20 A TO-3P Tight parameters distribution 1 1 1 Safe paralleling 3 Low th
9.15. Size:1293K st
stgw20h60df.pdf 

STGW20H60DF, STGWT20H60DF 600 V, 20 A high speed trench gate field-stop IGBT Datasheet - production data Features High speed switching TAB Tight parameters distribution Safe paralleling Low thermal resistance Short-circuit rated 3 3 2 2 Ultrafast soft recovery antiparallel diode 1 1 TO-247 TO-3P Applications Motor control UPS, PFC Figure
9.16. Size:2085K st
stgw20v60df.pdf 

STGB20V60DF, STGP20V60DF, STGW20V60DF, STGWT20V60DF 600 V, 20 A very high speed trench gate field-stop IGBT Datasheet - production data Features TAB TAB Maximum junction temperature TJ = 175 C Very high speed switching series 3 3 2 Tail-less switching off 1 1 Low saturation voltage VCE(sat) = 1.8 V (typ.) TO-220 D PAK @ IC = 20 A TAB Tight paramete
9.17. Size:1351K st
stgw20ih125df stgwt20ih125df.pdf 

STGW20IH125DF STGWT20IH125DF 1250 V, 20 A IH series trench gate field-stop IGBT Datasheet - production data Features TAB Designed for soft commutation only Maximum junction temperature TJ = 175 C Minimized tail current VCE(sat) = 2.0 V (typ.) @ IC = 15 A 3 2 Tight parameters distribution 3 1 2 Safe paralleling 1 Very low VF soft recovery co-pa
9.18. Size:400K st
stgw20nc60v.pdf 

STGB20NC60V - STGP20NC60V STGW20NC60V 30 A - 600 V - very fast IGBT Features High frequency operation up to 50 kHz Lower CRES / CIES ratio (no cross-conduction susceptibility) 3 High current capability 3 2 2 1 1 Applications TO-247 TO-220 3 1 High frequency inverters UPS, motor drivers D PAK HF, SMPS and PFC in both hard switch and resonant topologi
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