STGW28IH125DF Datasheet and Replacement
Type Designator: STGW28IH125DF
Type: IGBT
Type of IGBT Channel: N
Pcⓘ -
Maximum Power Dissipation: 375
W
|Vce|ⓘ - Maximum Collector-Emitter Voltage: 1250
V
|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20
V
|Ic|ⓘ - Maximum Collector Current: 25
A @25℃
|VCEsat|ⓘ -
Collector-Emitter saturation Voltage, typ: 2.25
V @25℃
Tjⓘ -
Maximum Junction Temperature: 175
℃
Coesⓘ - Output Capacitance, typ: 139
pF
Package:
TO247
- IGBT Cross-Reference
STGW28IH125DF Datasheet (PDF)
..1. Size:1376K st
stgw28ih125df.pdf 

STGW28IH125DF STGWT28IH125DF1250 V, 30 A IH series trench gate field-stop IGBTDatasheet - production dataFeaturesTAB Designed for soft commutation only Maximum junction temperature: TJ = 175 C Minimized tail current VCE(sat) = 2.0 V (typ.) @ IC = 25 A32 Tight parameters distribution312 Safe paralleling1 Low VF soft recovery co-package
9.1. Size:952K st
stgw25h120f2.pdf 

STGW25H120F2, STGWA25H120F2Trench gate field-stop IGBT, H series 1200 V, 25 A high speedDatasheet - production dataFeatures Maximum junction temperature: TJ = 175 C High speed switching series Minimized tail current VCE(sat) = 2.1 V (typ.) @ IC = 25 A 5 s minimum short circuit withstand time at 3 32 2 TJ=150 C1 1 Tight parameters distribution
9.2. Size:294K st
stgw20nb60h.pdf 

STGW20NB60HN-CHANNEL 20A - 600V TO-247PowerMESH IGBTTYPE VCES VCE(sat) ICSTGW20NB60H 600 V
9.3. Size:1046K st
stgw25m120df3.pdf 

STGW25M120DF3 STGWA25M120DF3Trench gate field-stop IGBT, M series 1200 V, 25 A low lossDatasheet - production dataFeatures 10 s of short-circuit withstand time VCE(sat) = 1.85 V (typ.) @ IC = 25 A Tight parameters distribution Safer paralleling Low thermal resistance3 Soft and fast recovery antiparallel diode21ApplicationsTO-247 Industria
9.4. Size:1352K st
stgw20ih125df.pdf 

STGW20IH125DF STGWT20IH125DF1250 V, 20 A IH series trench gate field-stop IGBTDatasheet - production dataFeaturesTAB Designed for soft commutation only Maximum junction temperature: TJ = 175 C Minimized tail current VCE(sat) = 2.0 V (typ.) @ IC = 15 A32 Tight parameters distribution312 Safe paralleling1 Very low VF soft recovery co-pa
9.5. Size:325K st
stgp20nb60k stgw20nb60k.pdf 

STGP20NB60KSTGW20NB60KN-CHANNEL 20A - 600V - TO-220/TO-247SHORT CIRCUIT PROOF PowerMESH IGBTTYPE VCES VCE(sat) ICSTGP20NB60K 600 V
9.6. Size:1613K st
stgw20v60f.pdf 

STGFW20V60F, STGW20V60F, STGWT20V60F600 V, 20 A very high speed trench gate field-stop IGBTDatasheet - production dataFeatures Maximum junction temperature: TJ = 175 C111 Very high speed switching series3 Tail-less switching off2 Low saturation voltage: VCE(sat) = 1.8 V (typ.) 1TO-3PF@ IC = 20 ATAB Tight parameters distribution Safe par
9.7. Size:464K st
stgb20nc60v stgp20nc60v stgw20nc60v.pdf 

STGB20NC60V, STGP20NC60V, STGW20NC60V30 A - 600 V - very fast IGBTDatasheet - production dataFeatures High frequency operation up to 50 kHz Lower CRES / CIES ratio (no cross-conduction susceptibility) High current capability3 3221 1ApplicationsTO-247 TO-22031 High frequency inverters UPS, motor driversDPAK HF, SMPS and PFC in both hard
9.8. Size:90K st
stgw20nb60hd.pdf 

STGW20NB60HD N-CHANNEL 20A - 600V TO-247PowerMESH IGBTTYPE VCES VCE(sat) ICSTGW20NB60HD 600 V
9.9. Size:698K st
stgw25s120df3.pdf 

STGW25S120DF3, STGWA25S120DF3Trench gate field-stop IGBT, S series 1200 V, 25 A low dropDatasheet - production dataFeatures 10 s of short-circuit withstand time VCE(sat) = 1.6 V (typ.) @ IC = 25 A Tight parameter distribution Safer paralleling Low thermal resistance32 Soft and fast recovery antiparallel diode1TO-247ApplicationsTO-247 long le
9.10. Size:303K st
stgw20nc60vd.pdf 

STGW20NC60VDN-CHANNEL 30A - 600V TO-247Very Fast PowerMESH IGBTTable 1: General Features Figure 1: PackageTYPE VCES VCE(sat) (Max) IC @25C @100CSTGW20NC60VD 600 V
9.11. Size:1293K st
stgw20h60df stgwt20h60df.pdf 

STGW20H60DF, STGWT20H60DF600 V, 20 A high speed trench gate field-stop IGBTDatasheet - production dataFeatures High speed switchingTAB Tight parameters distribution Safe paralleling Low thermal resistance Short-circuit rated3 322 Ultrafast soft recovery antiparallel diode11TO-247TO-3PApplications Motor control UPS, PFCFigure
9.12. Size:312K st
stgw20nb60kd.pdf 

STGW20NB60KDN-CHANNEL 20A - 600V - TO-247SHORT CIRCUIT PROOF PowerMESH IGBTTYPE VCES VCE(sat) ICSTGW20NB60KD 600 V
9.13. Size:732K st
stgw25h120df2.pdf 

STGW25H120DF2, STGWA25H120DF2Trench gate field-stop IGBT, H series 1200 V, 25 A high speed Datasheet - production dataFeatures Maximum junction temperature: TJ = 175 C High speed switching series Minimized tail current VCE(sat) = 2.1 V (typ.) @ IC = 25 A 5 s minimum short circuit withstand time at 3 3TJ=150 C2 21 1 Safe parallelingTO-247
9.14. Size:1497K st
stgw20h65fb.pdf 

STGFW20H65FB, STGW20H65FB, STGWT20H65FBTrench gate field-stop IGBT, HB series 650 V, 20 A high speedDatasheet - production dataTABFeatures Maximum junction temperature: TJ = 175 C High speed switching series3 Minimized tail current21 VCE(sat) = 1.55 V (typ.) @ IC = 20 ATO-3P Tight parameters distribution111 Safe paralleling3 Low th
9.15. Size:1293K st
stgw20h60df.pdf 

STGW20H60DF, STGWT20H60DF600 V, 20 A high speed trench gate field-stop IGBTDatasheet - production dataFeatures High speed switchingTAB Tight parameters distribution Safe paralleling Low thermal resistance Short-circuit rated3 322 Ultrafast soft recovery antiparallel diode11TO-247TO-3PApplications Motor control UPS, PFCFigure
9.16. Size:2085K st
stgw20v60df.pdf 

STGB20V60DF, STGP20V60DF, STGW20V60DF, STGWT20V60DF600 V, 20 A very high speed trench gate field-stop IGBTDatasheet - production dataFeaturesTABTAB Maximum junction temperature: TJ = 175 C Very high speed switching series332 Tail-less switching off11 Low saturation voltage: VCE(sat) = 1.8 V (typ.) TO-220 DPAK@ IC = 20 ATAB Tight paramete
9.17. Size:1351K st
stgw20ih125df stgwt20ih125df.pdf 

STGW20IH125DF STGWT20IH125DF1250 V, 20 A IH series trench gate field-stop IGBTDatasheet - production dataFeaturesTAB Designed for soft commutation only Maximum junction temperature: TJ = 175 C Minimized tail current VCE(sat) = 2.0 V (typ.) @ IC = 15 A32 Tight parameters distribution312 Safe paralleling1 Very low VF soft recovery co-pa
9.18. Size:400K st
stgw20nc60v.pdf 

STGB20NC60V - STGP20NC60VSTGW20NC60V30 A - 600 V - very fast IGBTFeatures High frequency operation up to 50 kHz Lower CRES / CIES ratio (no cross-conduction susceptibility)3 High current capability 3221 1ApplicationsTO-247 TO-22031 High frequency inverters UPS, motor drivers DPAK HF, SMPS and PFC in both hard switch and resonant topologi
Datasheet: STGW60H65DRF
, NGTB40N60FL2
, NGTB40N60FL2WG
, NGTB40N65FL2
, MMG75S060B6EN
, STGW25H120DF2
, STGW25H120F2
, STGW25S120DF3
, FGA60N65SMD
, STGW60H60DLFB
, STGW60H65DFB
, STGW60H65FB
, STGW60V60DF
, STGW60V60F
, STGWA25H120DF2
, STGWA25H120F2
, STGWA25S120DF3
.
History: PM25CL1A120
| CT20VM-8
| RJP60V0DPM
| GT10G101
| MG300N1US1
| MMG200D120B6TN
| STGP20M65DF2
Keywords - STGW28IH125DF transistor datasheet
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