STGWA25H120DF2 Todos los transistores

 

STGWA25H120DF2 IGBT Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: STGWA25H120DF2
   Tipo de transistor: IGBT
   Polaridad de transistor: N

ESPECIFICACIONES TECNICAS


   Pcⓘ - Máxima potencia disipada: 375 W
   |Vce|ⓘ - Tensión máxima colector-emisor: 1200 V
   |Vge|ⓘ - Tensión máxima puerta-emisor: 20 V
   |Ic|ⓘ - Colector de Corriente Continua a 25℃: 25 A
   |VCEsat|ⓘ - Voltaje de saturación colector-emisor, typ: 2.4 V @25℃
   Tjⓘ - Temperatura máxima de unión: 175 ℃
   trⓘ - Tiempo de subida, typ: 12 nS
   Coesⓘ - Capacitancia de salida, typ: 146 pF
   Paquete / Cubierta: TO247
 

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STGWA25H120DF2 PDF specs

 ..1. Size:732K  st
 stgwa25h120df2.pdf pdf_icon

STGWA25H120DF2

STGW25H120DF2, STGWA25H120DF2 Trench gate field-stop IGBT, H series 1200 V, 25 A high speed Datasheet - production data Features Maximum junction temperature TJ = 175 C High speed switching series Minimized tail current VCE(sat) = 2.1 V (typ.) @ IC = 25 A 5 s minimum short circuit withstand time at 3 3 TJ=150 C 2 2 1 1 Safe paralleling TO-247 ... See More ⇒

 3.1. Size:952K  st
 stgwa25h120f2.pdf pdf_icon

STGWA25H120DF2

STGW25H120F2, STGWA25H120F2 Trench gate field-stop IGBT, H series 1200 V, 25 A high speed Datasheet - production data Features Maximum junction temperature TJ = 175 C High speed switching series Minimized tail current VCE(sat) = 2.1 V (typ.) @ IC = 25 A 5 s minimum short circuit withstand time at 3 3 2 2 TJ=150 C 1 1 Tight parameters distribution ... See More ⇒

 7.1. Size:698K  st
 stgwa25s120df3.pdf pdf_icon

STGWA25H120DF2

STGW25S120DF3, STGWA25S120DF3 Trench gate field-stop IGBT, S series 1200 V, 25 A low drop Datasheet - production data Features 10 s of short-circuit withstand time VCE(sat) = 1.6 V (typ.) @ IC = 25 A Tight parameter distribution Safer paralleling Low thermal resistance 3 2 Soft and fast recovery antiparallel diode 1 TO-247 Applications TO-247 long le... See More ⇒

 7.2. Size:1046K  st
 stgwa25m120df3.pdf pdf_icon

STGWA25H120DF2

STGW25M120DF3 STGWA25M120DF3 Trench gate field-stop IGBT, M series 1200 V, 25 A low loss Datasheet - production data Features 10 s of short-circuit withstand time VCE(sat) = 1.85 V (typ.) @ IC = 25 A Tight parameters distribution Safer paralleling Low thermal resistance 3 Soft and fast recovery antiparallel diode 2 1 Applications TO-247 Industria... See More ⇒

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Otros transistores... STGW25H120F2 , STGW25S120DF3 , STGW28IH125DF , STGW60H60DLFB , STGW60H65DFB , STGW60H65FB , STGW60V60DF , STGW60V60F , IRG7R313U , STGWA25H120F2 , STGWA25S120DF3 , STGWA60H65DFB , STGWT28IH125DF , STGWT60H60DLFB , STGWT60H65DFB , STGWT60H65FB , STGWT60V60DF .

 

 
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