STGWT60V60DF Todos los transistores

 

STGWT60V60DF IGBT Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: STGWT60V60DF

Tipo de transistor: IGBT

Polaridad de transistor: N

ESPECIFICACIONES TECNICAS

Pcⓘ - Máxima potencia disipada: 375 W

|Vce|ⓘ - Tensión máxima colector-emisor: 600 V

|Vge|ⓘ - Tensión máxima puerta-emisor: 20 V

|Ic|ⓘ - Colector de Corriente Continua a 25℃: 60 A

Tjⓘ - Temperatura máxima de unión: 175 ℃

CARACTERÍSTICAS ELÉCTRICAS

|VCEsat|ⓘ - Voltaje de saturación colector-emisor, typ: 2.15 V @25℃

trⓘ - Tiempo de subida, typ: 20 nS

Coesⓘ - Capacitancia de salida, typ: 280 pF

Encapsulados: TO3P

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STGWT60V60DF datasheet

 ..1. Size:1625K  st
stgw60v60df stgwa60v60df stgwt60v60df.pdf pdf_icon

STGWT60V60DF

STGW60V60DF, STGWA60V60DF STGWT60V60DF Trench gate field-stop IGBT, V series 600 V, 60 A very high speed Datasheet - production data Features Maximum junction temperature TJ = 175 C Tail-less switching off VCE(sat) = 1.85 V (typ.) @ IC = 60 A 3 3 2 2 1 1 Tight parameter distribution TO-247 TO-247 long leads Safe paralleling TAB Low thermal resistan

 ..2. Size:1723K  st
stgwt60v60df.pdf pdf_icon

STGWT60V60DF

STGW60V60DF, STGWT60V60DF Trench gate field-stop IGBT, V series 600 V, 60 A very high speed Datasheet - production data Features TAB Maximum junction temperature TJ = 175 C Tail-less switching off VCE(sat) = 1.85 V (typ.) @ IC = 60 A Tight parameters distribution 3 3 Safe paralleling 2 2 1 Low thermal resistance 1 Very fast soft recovery antipa

 7.1. Size:1574K  st
stgwt60h65dfb.pdf pdf_icon

STGWT60V60DF

STGW60H65DFB, STGWA60H65DFB STGWT60H65DFB Trench gate field-stop IGBT, HB series 650 V, 60 A high speed Datasheet - production data Features TAB Maximum junction temperature TJ = 175 C High speed switching series Minimized tail current 3 3 2 2 VCE(sat) = 1.6 V (typ.) @ IC = 60 A 1 1 TO-3P TO-247 Tight parameters distribution Safe paralleling

 7.2. Size:685K  st
stgw60h65dfb stgwa60h65dfb stgwt60h65dfb.pdf pdf_icon

STGWT60V60DF

STGW60H65DFB, STGWA60H65DFB, STGWT60H65DFB Datasheet Trench gate field-stop 650 V, 60 A high speed HB series IGBT Features Maximum junction temperature TJ = 175 C 3 3 High speed switching series 2 2 1 1 Minimized tail current TO-247 TO-247 long leads Low saturation voltage VCE(sat) = 1.6 V (typ.) @ IC = 60 A TAB Tight parameter distribution Safe paral

Otros transistores... STGWA25H120DF2 , STGWA25H120F2 , STGWA25S120DF3 , STGWA60H65DFB , STGWT28IH125DF , STGWT60H60DLFB , STGWT60H65DFB , STGWT60H65FB , CRG60T60AK3HD , NGTB20N120IHR , NGTB20N120IHRWG , NGTB30N120IHR , NGTB30N120IHRWG , NGTB40N120IHR , NGTB40N120IHRWG , NGTB25N120FL2 , NGTB25N120FL2WG .

 

 

 


 
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