Справочник IGBT. STGWT60V60DF

 

STGWT60V60DF - IGBT справочник. Даташиты. Аналоги. Параметры и характеристики.


   Наименование: STGWT60V60DF
   Тип транзистора: IGBT
   Тип управляющего канала: N
   Pcⓘ - Максимальная рассеиваемая мощность: 375 W
   |Vce|ⓘ - Предельно-допустимое напряжение коллектор-эмиттер: 600 V
   |Vge|ⓘ - Максимально допустимое напряжение эмиттер-затвор: 20 V
   |Ic|ⓘ - Максимальный постоянный ток коллектора: 60 A @25℃
   |VCEsat|ⓘ - Напряжение насыщения коллектор-эмиттер типовое: 2.15 V @25℃
   Tjⓘ - Максимальная температура перехода: 175 ℃
   trⓘ - Время нарастания типовое: 20 nS
   Coesⓘ - Выходная емкость, типовая: 280 pF
   Тип корпуса: TO3P

 Аналог (замена) для STGWT60V60DF

 

 

STGWT60V60DF Datasheet (PDF)

 ..1. Size:1625K  st
 stgw60v60df stgwa60v60df stgwt60v60df.pdf

STGWT60V60DF STGWT60V60DF

STGW60V60DF, STGWA60V60DF STGWT60V60DFTrench gate field-stop IGBT, V series 600 V, 60 A very high speedDatasheet - production dataFeatures Maximum junction temperature: TJ = 175 C Tail-less switching off VCE(sat) = 1.85 V (typ.) @ IC = 60 A332211 Tight parameter distributionTO-247TO-247 long leads Safe parallelingTAB Low thermal resistan

 ..2. Size:1723K  st
 stgwt60v60df.pdf

STGWT60V60DF STGWT60V60DF

STGW60V60DF, STGWT60V60DFTrench gate field-stop IGBT, V series 600 V, 60 A very high speedDatasheet - production dataFeaturesTAB Maximum junction temperature: TJ = 175 C Tail-less switching off VCE(sat) = 1.85 V (typ.) @ IC = 60 A Tight parameters distribution33 Safe paralleling221 Low thermal resistance1 Very fast soft recovery antipa

 7.1. Size:1574K  st
 stgwt60h65dfb.pdf

STGWT60V60DF STGWT60V60DF

STGW60H65DFB, STGWA60H65DFB STGWT60H65DFBTrench gate field-stop IGBT, HB series 650 V, 60 A high speedDatasheet - production dataFeaturesTAB Maximum junction temperature: TJ = 175 C High speed switching series Minimized tail current3322 VCE(sat) = 1.6 V (typ.) @ IC = 60 A11TO-3PTO-247 Tight parameters distribution Safe paralleling

 7.2. Size:685K  st
 stgw60h65dfb stgwa60h65dfb stgwt60h65dfb.pdf

STGWT60V60DF STGWT60V60DF

STGW60H65DFB, STGWA60H65DFB, STGWT60H65DFBDatasheetTrench gate field-stop 650 V, 60 A high speed HB series IGBTFeatures Maximum junction temperature: TJ = 175 C3 3 High speed switching series2 21 1 Minimized tail currentTO-247TO-247 long leads Low saturation voltage: VCE(sat) = 1.6 V (typ.) @ IC = 60 ATAB Tight parameter distribution Safe paral

 7.3. Size:1229K  st
 stgwt60h65fb.pdf

STGWT60V60DF STGWT60V60DF

STGW60H65FB STGWT60H65FBTrench gate field-stop IGBT, HB series 650 V, 60 A high speedDatasheet - production dataFeatures Maximum junction temperature: TJ = 175 CTAB High speed switching series Minimized tail current VCE(sat) = 1.6 V (typ.) @ IC = 60 A Tight parameters distribution332 Safe paralleling211 Low thermal resistanceTO-247

 7.4. Size:1493K  st
 stgw60h60dlfb stgwt60h60dlfb.pdf

STGWT60V60DF STGWT60V60DF

STGW60H60DLFB STGWT60H60DLFBTrench gate field-stop IGBT, HB series 600 V, 60 A high speedDatasheet - production dataFeatures Maximum junction temperature: TJ = 175 CTAB High speed switching series Minimized tail current VCE(sat) = 1.6 V (typ.) @ IC = 60 A Tight parameters distribution3231 Safe paralleling21 Low thermal resistance

 7.5. Size:1494K  st
 stgwt60h60dlfb.pdf

STGWT60V60DF STGWT60V60DF

STGW60H60DLFB STGWT60H60DLFBTrench gate field-stop IGBT, HB series 600 V, 60 A high speedDatasheet - production dataFeatures Maximum junction temperature: TJ = 175 CTAB High speed switching series Minimized tail current VCE(sat) = 1.6 V (typ.) @ IC = 60 A Tight parameters distribution3231 Safe paralleling21 Low thermal resistance

Другие IGBT... APT20GN60BG , APT20GN60KG , APT20GN60SG , AOK20B60D1 , F3L30R06W1E3_B11 , WGW15G120N , WGW15G120W , IRG4MC50U , CRG60T60AK3HD , AOB10B60D , AOK10B60D , AOT10B60D , NGB8207AB , NGB8207B , AOB15B60D , IRGSL8B60K , AOK15B60D .

 

 
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