NGTB30N120IHRWG Todos los transistores

 

NGTB30N120IHRWG - IGBT. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: NGTB30N120IHRWG
   Tipo de transistor: IGBT
   Polaridad de transistor: N

ESPECIFICACIONES TECNICAS


   Pcⓘ - Máxima potencia disipada: 192 W
   |Vce|ⓘ - Tensión máxima colector-emisor: 1200 V
   |Vge|ⓘ - Tensión máxima puerta-emisor: 20 V
   |Ic|ⓘ - Colector de Corriente Continua a 25℃: 30 A
   |VCEsat|ⓘ - Voltaje de saturación colector-emisor, typ: 2.2 V @25℃
   Tjⓘ - Temperatura máxima de unión: 175 ℃
   Coesⓘ - Capacitancia de salida, typ: 124 pF
   Paquete / Cubierta: TO247
     - Selección de transistores por parámetros

 

NGTB30N120IHRWG Datasheet (PDF)

 0.1. Size:180K  onsemi
 ngtb30n120ihrwg.pdf pdf_icon

NGTB30N120IHRWG

NGTB30N120IHRWGIGBT with Monolithic FreeWheeling DiodeThis Insulated Gate Bipolar Transistor (IGBT) features a robust andcost effective Field Stop (FS) Trench construction, and providessuperior performance in demanding switching applications, offeringboth low on-state voltage and minimal switching loss. The IGBT ishttp://onsemi.comwell suited for resonant or soft switching appli

 1.1. Size:180K  onsemi
 ngtb30n120ihr.pdf pdf_icon

NGTB30N120IHRWG

NGTB30N120IHRWGIGBT with Monolithic FreeWheeling DiodeThis Insulated Gate Bipolar Transistor (IGBT) features a robust andcost effective Field Stop (FS) Trench construction, and providessuperior performance in demanding switching applications, offeringboth low on-state voltage and minimal switching loss. The IGBT ishttp://onsemi.comwell suited for resonant or soft switching appli

 2.1. Size:161K  onsemi
 ngtb30n120ihlwg.pdf pdf_icon

NGTB30N120IHRWG

NGTB30N120IHLWGIGBTThis Insulated Gate Bipolar Transistor (IGBT) features a robust andcost effective Field Stop (FS) Trench construction, and providessuperior performance in demanding switching applications, offeringboth low on-state voltage and minimal switching loss. The IGBT iswell suited for resonant or soft switching applications. Incorporatedhttp://onsemi.cominto the devic

 2.2. Size:172K  onsemi
 ngtb30n120ihs.pdf pdf_icon

NGTB30N120IHRWG

NGTB30N120IHSWGIGBTThis Insulated Gate Bipolar Transistor (IGBT) features a robust andcost effective Field Stop (FS) Trench construction, and providessuperior performance in demanding switching applications, offeringboth low on-state voltage and minimal switching loss. The IGBT iswell suited for resonant or soft switching applications. Incorporatedhttp://onsemi.cominto the devic

MOSTRAR MÁS

Otros transistores... STGWT28IH125DF , STGWT60H60DLFB , STGWT60H65DFB , STGWT60H65FB , STGWT60V60DF , NGTB20N120IHR , NGTB20N120IHRWG , NGTB30N120IHR , JT075N065WED , NGTB40N120IHR , NGTB40N120IHRWG , NGTB25N120FL2 , NGTB25N120FL2WG , NGTB25N120S , NGTB25N120SWG , NGTG25N120FL2 , NGTG25N120FL2WG .

History: APT27GA90SD15 | SG40T120DB | SGM50HF12A1TFDT4 | OST75N65HSMF | IRGC100B60UB | IRGP4063D1 | TGAN40N60F2D

 

 
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